scholarly journals Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 12
Author(s):  
Joevonte Kimbrough ◽  
Lauren Williams ◽  
Qunying Yuan ◽  
Zhigang Xiao
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Fabrication ◽  
Wafer Scale ◽  
Source Current ◽  
Source Voltage ◽  
Carbon Nanotube Devices ◽  
Technology Processes

In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs was functional, and that among the functional CNTFETs, 30% of the CNTFETs had an IDS on/off ratio larger than 20 while 70% of the CNTFETs had an IDS on/off ratio lower than 20. The highest IDS on/off ratio was about 490. The DEP-based positioning of carbon nanotubes is simple and effective, and the DEP-based device fabrication steps are compatible with Si technology processes and could lead to the wafer-scale fabrication of CNT electronic devices.

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors

2006 ◽  
Vol 45 (4B) ◽  
pp. 3680-3685 ◽  
Author(s):  
Bae-Horng Chen ◽  
Jeng-Hua Wei ◽  
Po-Yuan Lo ◽  
Zing-Way Pei ◽  
Tien-Sheng Chao ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Novel Method

NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS

2009 ◽  
Vol 23 (19) ◽  
pp. 3871-3880 ◽  
Author(s):  
RAHIM FAEZ ◽  
SEYED EBRAHIM HOSSEINI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Conventional Structure ◽  
Source Voltage ◽  
Effect Transistor ◽  
Output Characteristics ◽  
Novel Structures

A carbon nanotube field effect transistor (CNTFET) has been studied based on the Schrödinger–Poisson formalism. To improve the saturation range in the output characteristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (Vds) can be used, which results in higher output power. In the digital circuits, higher Vds increases noise immunity.

Fabrication of Carbon Nanotube Field-Effect Transistors with Metal and Semiconductor Electrodes

2007 ◽  
Vol 1057 ◽  
Author(s):  
Himani Sharma ◽  
Zhigang Xiao
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Bismuth Telluride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Back Side ◽  
Single Walled Carbon ◽  
Lift Off ◽  
Walled Carbon Nanotubes

ABSTRACTCarbon nanotube field-effect transistors (CNTFETs) were fabricated with metal material (gold) and semiconductor material (bismuth telluride) as the source and drain materials. Highly-purified HiPCO-grown single-walled carbon nanotubes (CNTs) from Carbon Nanotechnologies, Inc. (CNI) were used for the fabrication of CNTFETs. The single-walled carbon nanotubes were ultrasonically dispersed in toluene and dimethylformamide (DMF) with trifluoroacetic acid (TFA), as co-solvent. Dielectrophoresis (DEP) method was used to deposit, align, and assemble carbon nanotubes (CNTs) to bridge the gap between the source and drain of CNTFETs to form the channel. The structure of CNTFET is similar to a conventional field-effect transistor with substrate acting as a back-side gate. Electron-beam evaporation was used to deposit gold and bismuth telluride thin films. Microfabrication techniques such as photolithography, e-beam lithography, and lift-off process were used to define and fabricate the source, drain, and gate of CNTFETs. The gap between the source and drain varied from 800 nm to 3 µm. The drain-source current (IDS) of the fabricated CNTFETs versus the drain-source voltage (VDS) and the gate voltage (VG) was characterized. It was found that in the case of gold (Au) electrodes, the IV curves of CNTFETs clearly show behavior of the CNT (metallic or semiconducting) aligned across the source and drain of CNTFETs, while in the case of bismuth telluride (Bi2Te3) electrodes, the I-V curves are less dependent on the type of CNTs (metallic or semiconducting). The developed carbon nanotube field-effect transistors (CNTFETs) can be a good candidate for the application of nanoelectronics and integrated circuits with a high mobility and fast switching.

Carbon Felt/Carbon Nanotubes/Pani as pH Sensor

2007 ◽  
Vol 1018 ◽  
Author(s):  
Glaucio Ribeiro Silva ◽  
Elaine Yoshiko Matsubara ◽  
Paola Corio ◽  
Jose Mauricio Rosolen ◽  
Marcelo Mulato
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Conductivity ◽  
Ph Sensor ◽  
Chemical Vapor ◽  
Drain Current ◽  
Carbon Felt ◽  
Chemical Vapor Decomposition

AbstractThis work proposes the use of the composite carbon felt/carbon nanotube/Polyaniline as an alternative for applications as a pH sensor device. The carbon felt/carbon nanotube is an electronic conductivity material that was obtained from polymer felt (poliacrilonitrile felt) using oxidation and carbonization processes. The cup-stacked and bamboo-like tubes were grown on the fibers of carbon felt by chemical vapor decomposition method. The sensor was obtained by incorporating polyaniline (Pani) on the nanotubes present on the fibers of carbon felt/carbon nanotubes composite. The measuring process uses an EGFET (Extended Gate Field Effect Transistors) configuration, which is a derivation of the ISFET (Ion Sensitive Field Effect Transistor) - that is basically a chemical semiconductor sensor. The drain-current versus source-drain voltage is presented for varying pH concentrations from 2 up to 12.

Oxygen plasma post process to obtain consistent conductance of carbon nanotubes in carbon nanotube field-effect transistors

2012 ◽  
Vol 101 (17) ◽  
pp. 173104 ◽  
Author(s):  
Chi Woong Jang ◽  
Young Tae Byun ◽  
Deok Ha Woo ◽  
Seok Lee ◽  
Young Min Jhon
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Field Effect Transistors ◽  
Post Process
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