scholarly journals Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1400
Author(s):  
Manwen Liu ◽  
Xinqing Li ◽  
Wenzheng Cheng ◽  
Zheng Li ◽  
Zhihua Li
Keyword(s):  
Leakage Current ◽  
Collection Efficiency ◽  
Transient Current ◽  
High Resistivity ◽  
Cmos Process ◽  
High Luminosity ◽  
Charge Collection Efficiency ◽  
Pixel Detectors ◽  
Finite Element Technology ◽  
Full Depletion

The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 104 ohm·cm) silicon material.

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions

2007 ◽  
Vol 556-557 ◽  
pp. 913-916 ◽  
Author(s):  
Takeshi Ohshima ◽  
Takahiro Satoh ◽  
Masakazu Oikawa ◽  
Shinobu Onoda ◽  
Shigeomi Hishiki ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Ion Irradiation ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Transient Current ◽  
Charge Collection ◽  
Induced Current ◽  
Charge Collection Efficiency ◽  
Signal Peak ◽  
The Ideal

The charge generated in 6H-SiC n+p diodes by gold (Au) ion irradiation at an energy of 12 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). The signal peak of the transient current increases, and the fall-time decreases with increasing applied reverse bias. The value of collected charge experimentally obtained is smaller than the ideal value. The Charge Collection Efficiency (CCE) of 6H-SiC n+p diodes irradiated with Au ions is approximately 50 % in spite that the CCE of 100 % is obtained in the case of oxygen (O) ion irradiation.

scholarly journals Fabrication of a Hydrogenated Amorphous Silicon detector in 3-D Geometry and Preliminary Test on Planar Prototypes

2021 ◽  
Author(s):  
Mauro Menichelli ◽  
Marco Bizzarri ◽  
Maurizio Boscardin ◽  
Mirco Caprai ◽  
Anna Paola Caricato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Leakage Current ◽  
Collection Efficiency ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapour ◽  
Silicon Detector ◽  
Preliminary Test ◽  
X Rays ◽  
Charge Collection Efficiency ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapour deposition (PECVD) of SiH4 (Silane) mixed with Hydrogen. The resulting material shows outstanding radiation resistance properties and can be deposited on a wide variety of different substrates. These devices have been used to detect many different kinds of radiation namely: MIPs, x-rays, neutrons and ions as well as low energy protons and alphas. However, MIP detection using planar diodes has always been difficult due to the unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance and a limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations the 3D-SiAm collaboration proposes to use a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while conserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts will be illustrated.

scholarly journals Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes

Instruments ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 32
Author(s):  
Mauro Menichelli ◽  
Marco Bizzarri ◽  
Maurizio Boscardin ◽  
Mirco Caprai ◽  
Anna Paola Caricato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Leakage Current ◽  
Collection Efficiency ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Detector ◽  
Chemical Vapor ◽  
Preliminary Test ◽  
X Rays ◽  
Charge Collection Efficiency ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety of substrates. Devices employing a-Si:H technologies have been used to detect many different kinds of radiation, namely, minimum ionizing particles (MIPs), X-rays, neutrons, and ions, as well as low-energy protons and alphas. However, the detection of MIPs using planar a-Si:H diodes has proven difficult due to their unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance, and limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations, the 3D-SiAm collaboration proposes employing a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while preserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with a consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts are illustrated.

scholarly journals Influence of radiation defects on the electrophysical and detector properties of CdTe:Cl irradiated by neutrons

2020 ◽  
pp. 22-29 ◽  
Author(s):  
A. I. Kondrik ◽  
G. P. Kovtun
Keyword(s):  
Band Gap ◽  
Neutron Irradiation ◽  
Electron Mobility ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
High Energy ◽  
High Resistivity ◽  
Semiconductor Detectors ◽  
Radiation Defects ◽  
Charge Collection Efficiency

A promising material for semiconductor detectors of ionizing radiation is CdTe:Cl which allows obtaining detectors with high resistivity ρ and electron mobility μn. During operation, the detector materials may be exposed to neutron irradiation, which causes radiation defects to form in crystal lattice and deep levels to appear in the band gap, acting as centers of capture and recombination of nonequilibrium charge carriers, thus reducing the detection capability. The aim of this study was to use computer simulation to investigate the mechanisms of the influence of such radiation defects on the electrophysical properties (ρ, μn) of CdTe:Cl and the charge collection efficiency η of radiation detectors based on this material. The simulations were based on the models tested for reliability. It was found that the increase of the CdTe:Cl resistivity ρ during low-energy neutrons bombardment and at the initial stages of high-energy neutrons bombardment is caused by an increase in the concentration of radiation donor defect Z (with an energy level EC – 0.47 eV), presumably interstitial tellurium, which shifts the Fermi level into the middle of the band gap. The sharp rise of ρ observed at high-energy neutron bombardment is probably caused by the restructuring of the crystalline structure of the detector material with a change in the lattice constant and with an increase of the band gap, accompanied by a change in the conductivity properties. The degradation of the detector properties of CdTe:Cl during neutron irradiation is due to the capture and recombination of nonequilibrium electrons at radiation defects: Te interstitial, Te substitutional at the cadmium site, on tellurium vacancies and cadmium vacancies. The degradation of electron mobility μn can be caused by the scattering of electrons at microscopic areas of radiation defect clusters. The increase in concentration of the defects over the volume of the crystal at their uniform distribution of up to 1016 cm–3 does not significantly affect the electron mobility at room temperature.

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  
Keyword(s):  
Radiation Damage ◽  
3D Imaging ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Spatial Mapping ◽  
Charge Collection Efficiency ◽  
Silicon Sensor

scholarly journals Perspective on Predominant Metal Oxide Charge Transporting Materials for High-Performance Perovskite Solar Cells

2021 ◽  
Vol 8 ◽  
Author(s):  
Mriganka Singh ◽  
Chih Wei Chu ◽  
Annie Ng
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Charge Transport ◽  
High Performance ◽  
Collection Efficiency ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Future Research ◽  
Charge Collection Efficiency ◽  
Oxide Charge

Nowadays, the power conversion efficiency of organometallic mixed halide perovskite solar cells (PSCs) is beyond 25%. To fabricate highly efficient and stable PSCs, the performance of metal oxide charge transport layers (CTLs) is one of the key factors. The CTLs are employed in PSCs to separate the electrons and holes generated in the perovskite active layer, suppressing the charge recombination rate so that the charge collection efficiency can be increased at their respective electrodes. In general, engineering of metal oxide electron transport layers (ETLs) is found to be dominated in the research community to boost the performance of PSCs due to the resilient features of ETLs such as excellent electronic properties, high resistance to thermal temperature and moisture, ensuring good device stability as well as their high versatility in material preparation. The metal oxide hole transport layers in PSCs are recently intensively studied. The performance of PSCs is found to be very promising by using optimized hole transport materials. This review concisely discusses the evolution of some prevalent metal oxide charge transport materials (CTMs) including TiO2, SnO2, and NiOx, which are able to yield high-performance PSCs. The article begins with introducing the development trend of PSCs using different types of CTLs, pointing out the important criteria for metal oxides being effective CTLs, and then a variety of preparation methods for CTLs as employed by the community for high-performance PSCs are discussed. Finally, the challenges and prospects for future research direction toward scalable metal oxide CTM-based PSCs are delineated.

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