scholarly journals Precipitation of Mn Oxides in Quaternary Microbially Induced Sedimentary Structures (MISS), Cape Vani Paleo-Hydrothermal Vent Field, Milos, Greece

Minerals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 536
Author(s):  
Stephanos P. Kilias ◽  
Magnus Ivarsson ◽  
Ernest Chi Chi Fru ◽  
Jayne E. Rattray ◽  
Håkan Gustafsson ◽  
...  

Understanding microbial mediation in sediment-hosted Mn deposition has gained importance in low-temperature ore genesis research. Here we report Mn oxide ores dominated by todorokite, vernadite, hollandite, and manjiroite, which cement Quaternary microbially induced sedimentary structures (MISS) developed along bedding planes of shallow-marine to tidal-flat volcaniclastic sandstones/sandy tuffs, Cape Vani paleo-hydrothermal vent field, Milos, Greece. This work aims to decipher the link between biological Mn oxide formation, low-T hydrothermalism, and, growth and preservation of Mn-bearing MISS (MnMISS). Geobiological processes, identified by microtexture petrography, scanning and transmission electron microscopy, lipid biomarkers, bulk- and lipid-specific δ13Corganic composition, and field data, and, low-temperature hydrothermal venting of aqueous Mn2+ in sunlit shallow waters, cooperatively enabled microbially-mediated Mn (II) oxidation and biomineralization. The MnMISS biomarker content and δ13Corg signatures strongly resemble those of modern Mn-rich hydrothermal sediments, Milos coast. Biogenic and syngenetic Mn oxide precipitation established by electron paramagnetic resonance (EPR) spectroscopy and petrography, combined with hydrothermal fluid flow-induced pre-burial curing/diagenesis, may account for today’s crystalline Mn oxide resource. Our data suggests that MISS are not unique to cyanobacteria mats. Furthermore, microbial mats inhabited by aerobic methanotrophs may have contributed significantly to the formation of the MnMISS, thus widening the spectrum of environments responsible for marine Mn biometallogenesis.

2011 ◽  
Vol 76 (3) ◽  
pp. 524-540 ◽  
Author(s):  
Valentin Crépeau ◽  
Marie-Anne Cambon Bonavita ◽  
Françoise Lesongeur ◽  
Henintsoa Randrianalivelo ◽  
Pierre-Marie Sarradin ◽  
...  

Author(s):  
Zuzanna Liliental-Weber

Integration of GaAs devices is a challenging problem due to the lack of stable natural oxides which could isolate devices from one another. This problem is commonly solved by ion implantation, introducing point defects which can compensate impurity-related shallow donors or acceptors to make this material highly resistive. Recently, another approach was found: growing GaAs buffer layers at low temperature (∽ 200°C) removes all sidegating effects and so achieves effective device isolation. Such layers exhibit high resistivity, which is sustained even after annealing at 600°C. Own investigations by analytical electron microscopy showed these as-grown layers to be very As rich. Electron paramagnetic resonance and optical absorption studies detected AsGa antisite defects in the low-temperature buffer layers, in concentrations up to 1020 cm-3. X-ray diffraction revealed an 0.1 % increase in the lattice parameter of the epitaxial layers. After annealing at 600°C, the lattice parameter of the layers decreases to the substrate value?Transmission electron microscopy of these layers shows that their perfection is very sensitive to growth temperature and layer thickness. The layers grown below 200°C show specific defects with noncrystalline core surrounded by dislocations, stacking faults and microtwins.


Extremophiles ◽  
2014 ◽  
Vol 18 (3) ◽  
pp. 545-560 ◽  
Author(s):  
Andrea Jaeschke ◽  
Benjamin Eickmann ◽  
Susan Q. Lang ◽  
Stefano M. Bernasconi ◽  
Harald Strauss ◽  
...  

Author(s):  
D. A. Smith

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.


Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.


2021 ◽  
Vol 21 (3) ◽  
Author(s):  
Przemysław Snopiński ◽  
Mariusz Król ◽  
Marek Pagáč ◽  
Jana Petrů ◽  
Jiří Hajnyš ◽  
...  

AbstractThis study investigated the impact of the equal channel angular pressing (ECAP) combined with heat treatments on the microstructure and mechanical properties of AlSi10Mg alloys fabricated via selective laser melting (SLM) and gravity casting. Special attention was directed towards determining the effect of post-fabrication heat treatments on the microstructural evolution of AlSi10Mg alloy fabricated using two different routes. Three initial alloy conditions were considered prior to ECAP deformation: (1) as-cast in solution treated (T4) condition, (2) SLM in T4 condition, (3) SLM subjected to low-temperature annealing. Light microscopy, transmission electron microscopy, X-ray diffraction line broadening analysis, and electron backscattered diffraction analysis were used to characterize the microstructures before and after ECAP. The results indicated that SLM followed by low-temperature annealing led to superior mechanical properties, relative to the two other conditions. Microscopic analyses revealed that the partial-cellular structure contributed to strong work hardening. This behavior enhanced the material’s strength because of the enhanced accumulation of geometrically necessary dislocations during ECAP deformation.


1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.


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