scholarly journals Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1371 ◽  
Author(s):  
Zakhar Vakulov ◽  
Evgeny Zamburg ◽  
Daniil Khakhulin ◽  
Andrey Geldash ◽  
Dmitriy A. Golosov ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Photoelectron Spectroscopy ◽  
Piezoelectric Materials ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Residual Pressure ◽  
Free Films ◽  
Energy Conversion Devices

Energy conversion devices draw much attention due to their effective usage of energy and resulting decrease in CO2 emissions, which slows down the global warming processes. Fabrication of energy conversion devices based on ferroelectric and piezoelectric lead-free films is complicated due to the difficulties associated with insufficient elaboration of growth methods. Most ferroelectric and piezoelectric materials (LiNbO3, BaTiO3, etc.) are multi-component oxides, which significantly complicates their integration with micro- and nanoelectronic technology. This paper reports the effect of the oxygen pressure on the properties of nanocrystalline lithium niobate (LiNbO3) films grown by pulsed laser deposition on SiO2/Si structures. We theoretically investigated the mechanisms of LiNbO3 dissociation at various oxygen pressures. The results of x-ray photoelectron spectroscopy study have shown that conditions for the formation of LiNbO3 films are created only at an oxygen pressure of 1 × 10−2 Torr. At low residual pressure (1 × 10−5 Torr), a lack of oxygen in the formed films leads to the formation of niobium oxide (Nb2O5) clusters. The presented theoretical and experimental results provide an enhanced understanding of the nanocrystalline LiNbO3 films growth with target parameters using pulsed laser deposition for the implementation of piezoelectric and photoelectric energy converters.

Epitaxial Growth of (Na,K)NbO3 Films by Pulsed Laser Deposition

2013 ◽  
Vol 1494 ◽  
pp. 227-232
Author(s):  
K. Sakurai ◽  
T. Hanawa ◽  
N. Kikuchi ◽  
K. Nishio ◽  
K. Tonooka ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Piezoelectric Materials ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lattice Constants ◽  
Crystalline Films ◽  
The Difference

ABSTRACT(Na,K)NbO3 is a promising candidate for lead-free piezoelectric materials. (Na1-xKx)NbO3 films (x = 0.3–0.7) were epitaxially grown on a (100)SrTiO3 substrate via pulsed laser deposition. The effects of substrate temperature and oxygen pressure during deposition on the crystallinity of the films were examined: both parameters affected the mosaic spread of the crystallites and the formation of an impurity phase. In this study, the optimum conditions for the preparation of highly crystalline films were a substrate temperature of 800 °C and oxygen pressure of ∼60 Pa. The lattice constants parallel and perpendicular to the substrate surface responded differently to changes in x: the constant parallel to the surface increased with increasing x, while the constant perpendicular to the surface was maximized at x = 0.5. The difference in the dependence of the lattice constants could be explained by the elastic distortion of the lattice.

Characterization of the interfacial layer formed during pulsed laser deposition of oxides on Si

2001 ◽  
Vol 666 ◽  
Author(s):  
V. Craciun ◽  
J. M. Howard ◽  
N. D. Bassim ◽  
R. K. Singh
Keyword(s):  
Laser Ablation ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Si Substrates

ABSTRACTMedium-k dielectric Y2O3 films were directly grown on (100) Si substrates by the pulsed laser deposition (PLD) technique. X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, current-voltage, capacitance-voltage, and high-resolution transmission electron microscopy were used to investigate the composition, thickness, and electrical properties of the grown structures. It has been found that at the interface between the Si substrate and the grown dielectric layer, a SiOx interfacial layer, whose thickness depended on the oxygen pressure used during the PLD growth, was always formed. The main oxygen source for this interfacial layer formation is the physisorbed oxygen trapped inside the grown layer during the laser ablation-deposition process. When trying to reduce the thickness of this low-k interfacial layer by decreasing the oxygen pressure during laser ablation, a marked degradation of the electrical properties of the structures was noticed.

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Effect of oxygen pressure performance of PZO thin films deposited by pulsed laser deposition at low temperature

2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

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