scholarly journals Photoconversion Optimization of Pulsed-Laser-Deposited p-CZTS/n-Si-Nanowires Heterojunction-Based Photovoltaic Devices

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1393 ◽  
Author(s):  
Zakaria Oulad Elhmaidi ◽  
Mohammed Abd-Lefdil ◽  
My Ali El Khakani

We report on the achievement of novel photovoltaic devices based on the pulsed laser deposition (PLD) of p-type Cu2ZnSnS4 (CZTS) layers onto n-type silicon nanowires (SiNWs). To optimize the photoconversion efficiency of these p-CZTS/n-SiNWs heterojunction devices, both the thickness of the CZTS films and the length of the SiNWs were independently varied in the (0.3–1.0 µm) and (1–6 µm) ranges, respectively. The kësterite CZTS films were directly deposited onto the SiNWs/Si substrates by means of a one-step PLD approach at a substrate temperature of 300 °C and without resorting to any post-sulfurization process. The systematic assessment of the PV performance of the ITO/p-CZTS/n-SiNWs/Al solar cells, as a function of both SiNWs’ length and CZTS film thickness, has led to the identification of the optimal device characteristics. Indeed, an unprecedented power conversion efficiency (PCE) as high as ~5.5%, a VOC of 400 mV, a JSC of 26.3 mA/cm2 and a FF of 51.8% were delivered by the devices formed by SiNWs having a length of 2.2 µm along with a CZTS film thickness of 540 nm. This PCE value is higher than the current record efficiency (of 5.2%) reported for pulsed-laser-deposited-CZTS (PLD-CZTS)-based solar cells with the classical SLG/Mo/CZTS/CdS/ZnO/ITO/Ag/MgF2 device architecture. The relative ease of depositing high-quality CZTS films by means of PLD (without resorting to any post deposition treatment) along with the gain from an extended CZTS/Si interface offered by the silicon nanowires make the approach developed here very promising for further integration of CZTS with the mature silicon nanostructuring technologies to develop novel optoelectronic devices.

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Xuan Li ◽  
Linqu Luo ◽  
Yicheng Bi ◽  
Anqi Wang ◽  
Yunfa Chen ◽  
...  

AbstractHigh concentration ozone can damage greatly to the respiratory, cardiovascular systems, and fertility of people, and catalytic decomposition is an important strategy to reduce its harm. However, it remains a challenge to develop efficient ozone decomposition catalysts with high efficiency. In this study, p- and n-type silicon nanowires (Si NWs) are fabricated by wet chemical etching method and are firstly applied to catalytic decompose ozone at room temperature. The p-type Si NWs exhibit 90% ozone (20 ppm O3/air) decomposition efficiency with great stability, which is much better than that of n-type Si NWs (50%) with same crystal orientation, similar diameter and specific surface area. The catalytic property difference is mainly attributed to the more delocalization holes in the p-type Si NWs, which can accelerate the desorption of ozone decomposition intermediates (i.e., adsorbed oxygen species).


2015 ◽  
Vol 27 (27) ◽  
pp. 4013-4019 ◽  
Author(s):  
Jong Hoon Park ◽  
Jangwon Seo ◽  
Sangman Park ◽  
Seong Sik Shin ◽  
Young Chan Kim ◽  
...  

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FX02 ◽  
Author(s):  
Koichi Yamamoto ◽  
Hirokazu Okamoto ◽  
Hiroshi Sakakima ◽  
Ryoji Hayashi ◽  
Yohei Ogawa ◽  
...  

2015 ◽  
Vol 16 (3) ◽  
pp. 035003 ◽  
Author(s):  
Sandra Jenatsch ◽  
Thomas Geiger ◽  
Jakob Heier ◽  
Christoph Kirsch ◽  
Frank Nüesch ◽  
...  

2013 ◽  
Vol 23 (1) ◽  
pp. 69-77 ◽  
Author(s):  
Juan M. López-González ◽  
Isidro Martín ◽  
Pablo Ortega ◽  
Albert Orpella ◽  
Ramon Alcubilla

2015 ◽  
Vol 23 (11) ◽  
pp. 1448-1457 ◽  
Author(s):  
Pablo Ortega ◽  
Eric Calle ◽  
Guillaume von Gastrow ◽  
Päivikki Repo ◽  
David Carrió ◽  
...  

2012 ◽  
Vol 1408 ◽  
Author(s):  
H. Karaagac ◽  
M. Parlak ◽  
M. Saif Islam

ABSTRACTSi nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa0.5In0.5Se2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.


2002 ◽  
Vol 715 ◽  
Author(s):  
Wei Xu ◽  
P. C. Taylor

AbstractWe have made a series of a-SiSx:H based solar cells, with a pin structure, in a multichamber plasma enhanced chemical vapor deposition (PECVD) system. The sulfur concentration ranges from zero to 5 x 1018 cm-3 as measured by secondary ion mass spectroscopy. The initial conversion efficiencies of cells in this series with sulfur concentrations ≤ 1018 cm-3 are approximately 7%. The time constants for degradation increase with increasing sulfur concentration, but not fast enough to be of practical importance in photovoltaic devices.


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