scholarly journals Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60bilayer solar cells

2015 ◽  
Vol 16 (3) ◽  
pp. 035003 ◽  
Author(s):  
Sandra Jenatsch ◽  
Thomas Geiger ◽  
Jakob Heier ◽  
Christoph Kirsch ◽  
Frank Nüesch ◽  
...  
Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1393 ◽  
Author(s):  
Zakaria Oulad Elhmaidi ◽  
Mohammed Abd-Lefdil ◽  
My Ali El Khakani

We report on the achievement of novel photovoltaic devices based on the pulsed laser deposition (PLD) of p-type Cu2ZnSnS4 (CZTS) layers onto n-type silicon nanowires (SiNWs). To optimize the photoconversion efficiency of these p-CZTS/n-SiNWs heterojunction devices, both the thickness of the CZTS films and the length of the SiNWs were independently varied in the (0.3–1.0 µm) and (1–6 µm) ranges, respectively. The kësterite CZTS films were directly deposited onto the SiNWs/Si substrates by means of a one-step PLD approach at a substrate temperature of 300 °C and without resorting to any post-sulfurization process. The systematic assessment of the PV performance of the ITO/p-CZTS/n-SiNWs/Al solar cells, as a function of both SiNWs’ length and CZTS film thickness, has led to the identification of the optimal device characteristics. Indeed, an unprecedented power conversion efficiency (PCE) as high as ~5.5%, a VOC of 400 mV, a JSC of 26.3 mA/cm2 and a FF of 51.8% were delivered by the devices formed by SiNWs having a length of 2.2 µm along with a CZTS film thickness of 540 nm. This PCE value is higher than the current record efficiency (of 5.2%) reported for pulsed-laser-deposited-CZTS (PLD-CZTS)-based solar cells with the classical SLG/Mo/CZTS/CdS/ZnO/ITO/Ag/MgF2 device architecture. The relative ease of depositing high-quality CZTS films by means of PLD (without resorting to any post deposition treatment) along with the gain from an extended CZTS/Si interface offered by the silicon nanowires make the approach developed here very promising for further integration of CZTS with the mature silicon nanostructuring technologies to develop novel optoelectronic devices.


Author(s):  
Chongyang Xu ◽  
Zhihai Liu ◽  
Eun-Cheol Lee

We integrated a p-type organic semiconductor with the hole transport layer of inverted perovskite solar cells for improvements in stability and efficiency.


Polymers ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 2152
Author(s):  
E. M. Mkawi ◽  
Y. Al-Hadeethi ◽  
R. S. Bazuhair ◽  
A. S. Yousef ◽  
E. Shalaan ◽  
...  

In this study, polymer solar cells were synthesized by adding Sb2S3 nanocrystals (NCs) to thin blended films with polymer poly(3-hexylthiophene)(P3HT) and [6,6]-phenyl-C61-butyric-acid-methyl-ester (PCBM) as the p-type material prepared via the spin-coating method. The purpose of this study is to investigate the dependence of polymer solar cells’ performance on the concentration of Sb2S3 nanocrystals. The effect of the Sb2S3 nanocrystal concentrations (0.01, 0.02, 0.03, and 0.04 mg/mL) in the polymer’s active layer was determined using different characterization techniques. X-ray diffraction (XRD) displayed doped ratio dependences of P3HT crystallite orientations of P3HT crystallites inside a block polymer film. Introducing Sb2S3 NCs increased the light harvesting and regulated the energy levels, improving the electronic parameters. Considerable photoluminescence quenching was observed due to additional excited electron pathways through the Sb2S3 NCs. A UV–visible absorption spectra measurement showed the relationship between the optoelectronic properties and improved surface morphology, and this enhancement was detected by a red shift in the absorption spectrum. The absorber layer’s doping concentration played a definitive role in improving the device’s performance. Using a 0.04 mg/mL doping concentration, a solar cell device with a glass /ITO/PEDOT:PSS/P3HT-PCBM: Sb2S3:NC/MoO3/Ag structure achieved a maximum power conversion efficiency of 2.72%. These Sb2S3 NCs obtained by solvothermal fabrication blended with a P3HT: PCBM polymer, would pave the way for a more effective design of organic photovoltaic devices.


Solar RRL ◽  
2021 ◽  
pp. 2100152
Author(s):  
Sebastian Mack ◽  
David Herrmann ◽  
Martijn Lenes ◽  
Marten Renes ◽  
Andreas Wolf
Keyword(s):  
P Type ◽  

2021 ◽  
Vol 60 (19) ◽  
pp. 10608-10613
Author(s):  
Jian Du ◽  
Jialong Duan ◽  
Xiya Yang ◽  
Yanyan Duan ◽  
Quanzhu Zhou ◽  
...  

2010 ◽  
Vol 94 (12) ◽  
pp. 2332-2336 ◽  
Author(s):  
Sun-Young Park ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Dong-Ho Kim ◽  
Jae-Wook Kang

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.


2015 ◽  
Vol 6 (9) ◽  
pp. 1666-1673 ◽  
Author(s):  
Jiewei Liu ◽  
Sandeep Pathak ◽  
Thomas Stergiopoulos ◽  
Tomas Leijtens ◽  
Konrad Wojciechowski ◽  
...  

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