czts film
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2021 ◽  
Vol 32 (20) ◽  
pp. 25188-25200
Author(s):  
Wenjun Cui ◽  
Libo Li ◽  
Yan Xu ◽  
Yuhang Shan ◽  
Mo Zhai ◽  
...  

2020 ◽  
Vol 20 (8) ◽  
pp. 925-930 ◽  
Author(s):  
Chinnaiyah Sripan ◽  
Devarajan Alagarasan ◽  
S. Varadharajaperumal ◽  
R. Ganesan ◽  
Ramakanta Naik

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1393 ◽  
Author(s):  
Zakaria Oulad Elhmaidi ◽  
Mohammed Abd-Lefdil ◽  
My Ali El Khakani

We report on the achievement of novel photovoltaic devices based on the pulsed laser deposition (PLD) of p-type Cu2ZnSnS4 (CZTS) layers onto n-type silicon nanowires (SiNWs). To optimize the photoconversion efficiency of these p-CZTS/n-SiNWs heterojunction devices, both the thickness of the CZTS films and the length of the SiNWs were independently varied in the (0.3–1.0 µm) and (1–6 µm) ranges, respectively. The kësterite CZTS films were directly deposited onto the SiNWs/Si substrates by means of a one-step PLD approach at a substrate temperature of 300 °C and without resorting to any post-sulfurization process. The systematic assessment of the PV performance of the ITO/p-CZTS/n-SiNWs/Al solar cells, as a function of both SiNWs’ length and CZTS film thickness, has led to the identification of the optimal device characteristics. Indeed, an unprecedented power conversion efficiency (PCE) as high as ~5.5%, a VOC of 400 mV, a JSC of 26.3 mA/cm2 and a FF of 51.8% were delivered by the devices formed by SiNWs having a length of 2.2 µm along with a CZTS film thickness of 540 nm. This PCE value is higher than the current record efficiency (of 5.2%) reported for pulsed-laser-deposited-CZTS (PLD-CZTS)-based solar cells with the classical SLG/Mo/CZTS/CdS/ZnO/ITO/Ag/MgF2 device architecture. The relative ease of depositing high-quality CZTS films by means of PLD (without resorting to any post deposition treatment) along with the gain from an extended CZTS/Si interface offered by the silicon nanowires make the approach developed here very promising for further integration of CZTS with the mature silicon nanostructuring technologies to develop novel optoelectronic devices.


Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 855 ◽  
Author(s):  
Xianfeng Zhang ◽  
Hongde Wu ◽  
Engang Fu ◽  
Yuehui Wang

Secondary phases are common in Cu2ZnSnS4 (CZTS) thin films, which can be fatal to the performance of solar cell devices fabricated from this material. They are difficult to detect by X-Ray diffraction (XRD) because of the weak peak in spectra compared with the CZTS layer. Herein, it was found that in-depth elemental distribution by a secondary ion mass spectroscopy method illustrated uniform film composition in the bulk with slight fluctuation between different grains. X-ray photoelectron spectroscopy (XPS) measurement was conducted after sputtering the layer with different depths. An Auger electron spectrum with Auger parameter were used to check the chemical states of elements and examine the distribution of secondary phases in the CZTS films. Secondary phases of CuS, ZnS and SnS were detected at the surface of the CZTS film within a 50-nm thickness while no secondary phases were discovered in the bulk. The solar cell fabricated with the as-grown CZTS films showed a conversion efficiency of 2.1% (Voc: 514.3 mV, Jsc: 10.4 mA/cm2, FF: 39.3%) with an area of 0.2 cm2 under a 100 mW/cm2 illumination. After a 50-nm sputtering on the CZTS film, the conversion efficiency of the solar cell was improved to 6.2% (Voc: 634.0 mV, Jsc: 17.3 mA/cm2, FF: 56.9%).


2019 ◽  
Vol 463 ◽  
pp. 994-1000 ◽  
Author(s):  
D. David Kirubakaran ◽  
C. Ravi Dhas ◽  
Sagar M. Jain ◽  
Luis F. Marchesi ◽  
Sudhagar Pitchaimuthu

2018 ◽  
Vol 25 (03) ◽  
pp. 1850075
Author(s):  
OBILA JORIM OKOTH ◽  
DINFA LUKA DOMTAU ◽  
MUKABI MARINA ◽  
ONYATTA JOHN ◽  
OGACHO ALEX AWUOR

Copper indium gallium selenide (CIGS) is currently most efficient thin film solar technology in use but it is faced with problems of material scarcity and toxicity. An alternative earth abundant and non-toxic materials consisting of Cu2ZnSnS4 (CZTS) have been investigated as a replacement for CIGS. In this work, CZTS thin films deposited by low cost co-electrodeposition, at a potential of [Formula: see text]1.2[Formula: see text]V, coupled with chemical bath techniques at room temperature and then annealed under sulphur rich atmosphere were investigated. CZTS thin film quality determination was carried out using Raman spectroscopy which confirmed formation of quality CZTS film, main Raman peaks at 288[Formula: see text]cm[Formula: see text] and 338[Formula: see text]cm[Formula: see text] were observed. Electrical characterization was carried out using four-point probe instrument and the resistivity was in the order of [Formula: see text]-cm. The optical characterization was done using UV-VIS-NIR spectrophotometer. The bandgaps of the annealed CZTS film ranged from 1.45 to 1.94[Formula: see text]eV with absorption coefficient of order [Formula: see text][Formula: see text]cm[Formula: see text] in the visible and near infrared range of the solar spectrum were observed.


Author(s):  
Xianfeng Zhang ◽  
M. Kobayashi

A Cu2ZnSnS4 (CZTS) film with a thickness of approximately 1.5 μm was fabricated on a Mo-coated glass substrate by annealing a CZTS precursor fabricated from nanoparticle ink. The chemical states of the elements in the CZTS thin film in the depth direction were studied to identify the presence of secondary phases, which are detrimental to the performance of solar cells containing CZTS. X-ray diffraction was unable to detect any secondary phases in CZTS because of their small relative amount. Instead, X-ray photoelectron spectroscopy (XPS), which is highly sensitive to chemical state, was conducted at different depths in the CZTS film to further check the presence of secondary phases. XPS analysis revealed peaks shift consistent with the presence of secondary phases. For the CZTS film annealed in a S atmosphere at 575 °C for 3 h, the film surface consisted of a secondary-phase layer composed of CuS, ZnS, and SnSx (x=1 or 2) originating from the decomposition of CZTS. At depths below 80 nm, the film was pure CZTS. Formation of MoS2 at the CZTS–Mo interface was confirmed by XPS analysis of Mo and S.


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