A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

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Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array

2015 45th European Solid State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2015.7324750 ◽

2015 ◽

Cited By ~ 3

Author(s):

G. Larrieu ◽

Y. Guerfi ◽

X.L Han ◽

N. Clement

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Nanowire Array ◽

Si Nanowire ◽

Vertical Field ◽

Si Nanowire Array ◽

Effect Transistor ◽

Vertical Field Effect ◽

Vertical Field Effect Transistor

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Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

Nanomaterials ◽

10.3390/nano11061408 ◽

2021 ◽

Vol 11 (6) ◽

pp. 1408

Author(s):

Lu Xie ◽

Huilong Zhu ◽

Yongkui Zhang ◽

Xuezheng Ai ◽

Junjie Li ◽

...

Keyword(s):

Crystal Orientation ◽

Field Effect ◽

Etch Rate ◽

Field Effect Transistors ◽

Atomic Layer ◽

Wet Etching ◽

Isotropic Etching ◽

Etching Selectivity ◽

Oxide Removal ◽

Atomic Layer Etching

For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge0.8Si0.2 was considered. In this work, a dual-selective atomic layer etching (ALE), including Ge0.8Si0.2-selective etching of Ge and crystal-orientation selectivity of Ge oxidation, has been developed to control the etch rate and the size of the Ge nanowires. The ALE of Ge in p+-Ge0.8Si0.2/Ge stacks with 70% HNO3 as oxidizer and deionized (DI) water as oxide-removal was investigated in detail. The saturated relative etched amount per cycle (REPC) and selectivity at different HNO3 temperatures between Ge and p+-Ge0.8Si0.2 were obtained. In p+-Ge0.8Si0.2/Ge stacks with (110) sidewalls, the REPC of Ge was 3.1 nm and the saturated etching selectivity was 6.5 at HNO3 temperature of 20 °C. The etch rate and the selectivity were affected by HNO3 temperatures. As the HNO3 temperature decreased to 10 °C, the REPC of Ge was decreased to 2 nm and the selectivity remained at about 7.4. Finally, the application of ALE in the formation of Ge nanowires in vGAAFETs was demonstrated where the preliminary Id–Vds output characteristic curves of Ge vGAAFET were provided.

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Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

Thin Solid Films ◽

10.1016/j.tsf.2011.08.034 ◽

2012 ◽

Vol 520 (8) ◽

pp. 3332-3336 ◽

Cited By ~ 10

Author(s):

Stefan Habicht ◽

Sebastian Feste ◽

Qing-Tai Zhao ◽

Dan Buca ◽

Siegfried Mantl

Keyword(s):

Field Effect Transistors ◽

Nanowire Array ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Uniaxial Tensile ◽

Strained Si ◽

Si Nanowire ◽

Si Nanowire Array

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Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

Nanomaterials ◽

10.3390/nano10071404 ◽

2020 ◽

Vol 10 (7) ◽

pp. 1404

Author(s):

Mircea Dragoman ◽

Adrian Dinescu ◽

Florin Nastase ◽

Daniela Dragoman

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Ferroelectric Material ◽

Graphene Monolayer ◽

Graphene Field Effect Transistor ◽

Effect Transistor ◽

Graphene Fet ◽

20 Nm ◽

Nanopatterned Graphene

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.

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Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.160-162.1331 ◽

2010 ◽

Vol 160-162 ◽

pp. 1331-1335 ◽

Cited By ~ 1

Author(s):

Chuan Bo Li ◽

Kristel Fobelets ◽

S.N. Syed Jalal ◽

Wei A. Ng ◽

Zahid A.K. Durrani

Keyword(s):

Electrical Conductivity ◽

Electrical Property ◽

Electrical Properties ◽

Chemical Modification ◽

Nanowire Array ◽

Noise Measurement ◽

Nanowire Arrays ◽

Interface Traps ◽

Si Nanowire ◽

Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

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