Probing the Performance of Glucose Oxidase Treated Graphene-Based Field Effect Transistors

2019 ◽  
Vol 19 (11) ◽  
pp. 7442-7446 ◽  
Author(s):  
Salma Siddique ◽  
Hamid Mukhtar
Keyword(s):  
Glucose Oxidase ◽  
Electrical Transport ◽  
Field Effect ◽  
Treatment Time ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Effect Transistor ◽  
Graphene Devices ◽  
Graphene Fet ◽  
Effect Of Glucose

Graphene due to its unique properties of biocompatibility has received considerable attention for biosensing applications. Here, we report the effect of glucose oxidase treatment on the graphene devices. Raman spectroscopy and the electrical transport measurements are performed to study the graphene intrinsic characteristics before glucose oxidase treatment. The absence of the defect peak in the Raman spectrum shows high-quality graphene. The modulation in the electrical properties is further investigated by different period of glucose oxidase treatment. Our results illustrate that the mobility of the graphene-based field effect transistor is gradually enhanced with the glucose oxidase treatment time. The enhancement in the electrical performance of graphene FET with the biomolecules could be the suitable route for the bioelectronic devices.

CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

2011 ◽  
Vol 1283 ◽  
Author(s):  
Benjamin Mailly Giacchetti ◽  
Allen Hsu ◽  
Han Wang ◽  
Ki Kang Kim ◽  
Jing Kong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Ph Sensing ◽  
Fabrication Technology ◽  
Initial Characterization ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Fet

ABSTRACTThis paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

scholarly journals Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1404
Author(s):  
Mircea Dragoman ◽  
Adrian Dinescu ◽  
Florin Nastase ◽  
Daniela Dragoman
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Ferroelectric Material ◽  
Graphene Monolayer ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Graphene Fet ◽  
20 Nm ◽  
Nanopatterned Graphene

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.

Electron Irradiation of Graphene Field Effect Transistor Devices

2013 ◽  
Vol 1549 ◽  
pp. 35-40 ◽  
Author(s):  
Sung Oh Woo ◽  
Winfried Teizer
Keyword(s):  
Electron Irradiation ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Vacuum ◽  
Ambient Conditions ◽  
Electrical Transport Properties ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Graphene Devices

ABSTRACTWe report the effects of electron irradiation on graphene Field Effect Transistor (FET) devices. We irradiated the graphene devices with 30keV electrons and measured the electrical transport properties in high vacuum in-situ. Upon electron irradiation, a Raman ‘D’ band appears. In addition, we observed that the doping behavior of the graphene devices changed from P to N type as a result of the irradiation. We also observed a shift of the Dirac point while the graphene FET device stays in vacuum and after it interacted with environmental molecules under ambient conditions.

scholarly journals Performance Study of Pentacene based Organic Field Effect Transistor by Using monolayer, bilayer and trilayer and Gate Insulators

2020 ◽  
Vol 18 (44) ◽  
pp. 85-97
Author(s):  
Bushra H. Mohammed ◽  
Estabraq Talib Abdullah
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Output Curve ◽  
Drain Voltage ◽  
Performance Study ◽  
Current Increase ◽  
Gate Insulators ◽  
Effect Transistor

In this paper, Pentacene based-organic field effect transistors (OFETs) by using monolayer , bilayer and three layers of three  different gate insulators (ZrO2, PVA and CYEPL) , two layers of different gate insulators (ZrO2/PVA and ZrO2/CYEPL  ) and three layers of different gate insulators (ZrO2/PVA/CYEPL) were studied its electrical performance (output (Id-Vd)and transfer(Id-Vg) characteristics)by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investigate the source-drain voltage (Vd) dependent current and note The effects of gate dielectric on electrical performance for OFET. As this work  take account of  effect capacitance semiconductor in performance OFETs. The values of current which calculated using MATLAB simulation exhibited a value of current increase with increasing source-drain voltage.  Also the Organic Transistor modeling software was used to evaluate the transconductance calculated.

Influence of the Contact Thickness on Electrical Performance of Staggered and Planer p-Channel Organic Field Effect Transistors

2012 ◽  
Vol 622-623 ◽  
pp. 1434-1438 ◽  
Author(s):  
Brijesh Kumar ◽  
B.K. Kaushik ◽  
Y.S. Negi
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Thickness Variation ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility ◽  
Effect Transistor ◽  
Current Value ◽  
Good Agreement

The influence of contact thickness on electrical performance of bottom gate Organic Field Effect Transistor (BG-OFET) with staggered and planer structures is studied in this paper. Two dimensional device simulation is performed with identical dimensions for both devices which show a good agreement between simulated and measured results. Contact thickness is varied from 0nm to 20nm for planer and staggered structures. The electrical characteristics are strongly affected by the contact thickness variation. With increasing contact thickness, the threshold voltage shifts from negative to positive. The simulation results indicate that saturation current value of staggered structure is higher than that of planer. Although the current does not increase in staggered structure due to its increasing contact thickness, while the current in planer structure increases up to three times. However, current in planer is still below the current in staggered structure. The extracted field effect mobility and current on-off ratio at 20nm electrode thickness for staggered structure is 0.67 cm2/V.s and 108, respectively. It has been observed that the field effect mobility, threshold voltage, sub-threshold slope, transconductance and current on-off ratio can be modified by varying contact thickness. Analysis of the results clearly demonstrates the significance of controlling the contact thickness in planer and staggered OFETs. It even offers a way to control OFETs parameters.

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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