scholarly journals Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 675
Author(s):  
Gernot Heine ◽  
Wolfgang Lang ◽  
Roman Rössler ◽  
Johannes D. Pedarnig

The resistivity and the Hall effect in the copper-oxide high-temperature superconductor YBa2Cu3O7-δ (YBCO) are remarkably anisotropic. Using a thin film of YBCO grown on an off-axis cut SrTiO3 substrate allows one to investigate these anisotropic transport properties in a planar and well-defined sample geometry employing a homogeneous current density. In the normal state, the Hall voltage probed parallel to the copper-oxide layers is positive and strongly temperature dependent, whereas the out-of-plane Hall voltage is negative and almost temperature independent. The results confirm previous measurements on single crystals by an entirely different measurement method and demonstrate that vicinal thin films might be also useful for investigations of other layered nanomaterials.

2018 ◽  
Vol 20 (8) ◽  
pp. 5636-5643 ◽  
Author(s):  
Christoph Möller ◽  
Hanna Fedderwitz ◽  
Claudine Noguera ◽  
Jacek Goniakowski ◽  
Niklas Nilius

STM and DFT calculations are employed to explore structural phase transitions in thin copper-oxide films grown on Au(111).


2012 ◽  
Vol 53 (6) ◽  
pp. 1017-1024 ◽  
Author(s):  
A. E. Mag-isa ◽  
S.-M. Kim ◽  
J.-H. Kim ◽  
H.-J. Lee ◽  
C.-S. Oh

2004 ◽  
Vol 03 (01n02) ◽  
pp. 149-154 ◽  
Author(s):  
V. N. MATVEEV ◽  
V. A. BEREZIN ◽  
V. T. VOLKOV ◽  
A. A. FIRSOV ◽  
O. V. KONONENKO ◽  
...  

Fe – Pt alloy thin and ultra thin films were deposited by the pulse laser evaporation method. Micronano Hall devices were fabricated from ultra thin films by an Ar plasma etching process using electron beam lithography procedures. The extraordinary Hall effect (EHE) in Fe – Pt alloy thin and ultra thin films and micronano Hall devices was investigated. The film thickness reduction is found to cause an increase in Hall voltage, which means an enhancement of field sensitivity of the Hall sensor. Maximum sensitivity S=260 Ω/ T was measured in ultra thin film with thickness d=20 Å.


2018 ◽  
Vol 255 (8) ◽  
pp. 1800041 ◽  
Author(s):  
Yu Zhang ◽  
San-Sheng Wang ◽  
Fang Li ◽  
Wen Jiang ◽  
Zhu-Li Zhang ◽  
...  

2004 ◽  
Vol 811 ◽  
Author(s):  
Y. Drezner ◽  
S. Berger

AbstractMicrostructure studies of ultra-thin BaTiO3 thin films (2-10 nm thick) show nano-domains having a width as small as one unit cell. Only 180° nano-domains are formed in multi-domains structures. The domain-boundaries are formed at {001} twin boundaries. Most of the domains are oriented in parallel to the film plane but out-of-plane orientations are also observed. The films exhibit ferroelectric behavior characterized by a polarization hysteresis loop and a relatively fast switching time. A remnant polarization of about 0.5 μC/cm2 and coercive field of 2.7 V/cm were measured in parallel to the film plane. Temperature-dependent measurements show two peaks of the dielectric constant at about 60°C and 115°C. These peaks are attributed to two transition temperatures associated with the orientation of the nano-domains relative to the film plane and stress.


2019 ◽  
Vol 7 (2) ◽  
pp. 14-18 ◽  
Author(s):  
Mohammad G. Faraj ◽  
Askander K. Kaka ◽  
Halo D. Omar

In this paper, copper oxide (CuO) thin films were deposited on polyimide (PI) Plastic substrates with spray pyrolysis technique with different temperatures (i.e. 250–300 °C). All the deposited films were characterized by X-ray diffraction (XRD) and Hall Effect measurements for the Structural and electrical properties. Effects of substrate temperature on the structural and electrical characteristics of the films were studied. The X-ray diffraction patterns’ results reveal that the all of CuO films have a face centered cubic structure. The crystallite grain size was calculated using Scherrer formula and it is found that the substrate temperature (300 0C) has maximum crystallite grain size (81.2 nm). Hall Effect measurements showed that all the films are of p-type conductivity. Depending on the substrate temperature, Hall measurement showed that the electrical resistivity and the carrier concentration varied in the range 77.4 Ω.cm to 52.7 Ω.cm and  6.3 x1015 cm-3 to  10.1 x1015 cm-3.


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