scholarly journals Localized Energy Band Bending in ZnO Nanorods Decorated with Au Nanoparticles

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2718
Author(s):  
Luca Bruno ◽  
Vincenzina Strano ◽  
Mario Scuderi ◽  
Giorgia Franzò ◽  
Francesco Priolo ◽  
...  

Surface decoration by means of metal nanostructures is an effective way to locally modify the electronic properties of materials. The decoration of ZnO nanorods by means of Au nanoparticles was experimentally investigated and modelled in terms of energy band bending. ZnO nanorods were synthesized by chemical bath deposition. Decoration with Au nanoparticles was achieved by immersion in a colloidal solution obtained through the modified Turkevich method. The surface of ZnO nanorods was quantitatively investigated by Scanning Electron Microscopy, Transmission Electron Microscopy and Rutherford Backscattering Spectrometry. The Photoluminescence and Cathodoluminescence of bare and decorated ZnO nanorods were investigated, as well as the band bending through Mott–Schottky electrochemical analyses. Decoration with Au nanoparticles induced a 10 times reduction in free electrons below the surface of ZnO, together with a decrease in UV luminescence and an increase in visible-UV intensity ratio. The effect of decoration was modelled with a nano-Schottky junction at ZnO surface below the Au nanoparticle with a Multiphysics approach. An extensive electric field with a specific halo effect formed beneath the metal–semiconductor interface. ZnO nanorod decoration with Au nanoparticles was shown to be a versatile method to tailor the electronic properties at the semiconductor surface.

2011 ◽  
Vol 99 (8) ◽  
pp. 082103 ◽  
Author(s):  
A. R. Jeong ◽  
W. Jo ◽  
S. Jung ◽  
J. Gwak ◽  
J. H. Yun

1999 ◽  
Vol 5 (S2) ◽  
pp. 288-289
Author(s):  
M.R. Phillips ◽  
M. Toth ◽  
D. Drouin

Contrast in secondary electron images of p-n junctions has been observed using a FESEM operating at 1kV. This contrast has been attributed to energy band-bending effects and dopant level variations. In this paper, we report that contrast from the depletion layer of a p-n junction can be obtained in an ESEM using a gaseous secondary electron detector (GSED). The contrast is caused by a signal induced in the GSED by charging and discharging of the device.A 1N4002 p+pn silicon power diode was cross-sectioned along the lead axis to expose the Ag ohmic contacts and the semiconductor device. The section was mechanically polished to an optical finish using diamond abrasives and mounted in a holder which allowed electrical connection to both the p and n sides of the diode. Imaging experiments were performed in a Philips Electroscan XL30 ESEM and a JEOL 6300F below-lens FESEM. Current images were obtained with a GW Electronics 103 specimen current amplifier.


2012 ◽  
Vol 100 (24) ◽  
pp. 243301 ◽  
Author(s):  
Shenghao Wang ◽  
Takeaki Sakurai ◽  
Ryusuke Kuroda ◽  
Katsuhiro Akimoto

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