scholarly journals Mass Production of 3D Connective Graphene Networks by Fluidized Bed Chemical Vapor Deposition and Its Application in High Performance Lithium-Sulfur Battery

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 150
Author(s):  
Rongzheng Liu ◽  
Jian Zhao ◽  
Xu Yang ◽  
Malin Liu ◽  
Jiaxing Chang ◽  
...  

Three−dimensional (3D) graphene with novel nano−architectures exhibits many excellent properties and is promising for energy storage and conversion applications. Herein, a new strategy based on the fluidized bed chemical vapor deposition (FB−CVD) process was proposed to prepare 3D graphene networks (3DGNs) with various nano−architectures. Specially designed SiC−C@graphene core/shell nanoparticles were prepared taking the advantages of the FB−CVD system, and 3DGNs with hierarchical nanostructures were obtained after removing the SiC core. The 3DGNs performed well as electrodes of lithium–sulfur batteries. The C–S cathode showed good rate performance at the current density of 0.1–2.0 C, and an initial discharge capacity of 790 mAhg−1 cathode was achieved at a current density of 0.2 C. The Li−S batteries showed stabilized coulombic efficiency as high as 94% and excellent cyclic performance with an ultra low cyclic fading rate of 0.075% for the initial 280 cycles at a current density of 1.0 C. The improved electrochemical performance was ascribed to the enhanced conductivity by the connective graphene networks and the weakened shuttle effect by the special outer graphene layers. Mass production of the products was realized by the continuous FB−CVD process, which opens up new perspectives for large scale application of 3D graphene materials.

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.


2019 ◽  
Vol 102 (11) ◽  
pp. 6463-6468 ◽  
Author(s):  
Jian Zhao ◽  
Malin Liu ◽  
Jiaxing Chang ◽  
Youlin Shao ◽  
Bing Liu ◽  
...  

DYNA ◽  
2015 ◽  
Vol 82 (189) ◽  
pp. 22-29
Author(s):  
Jose Luddey Marulanda-Arevalo ◽  
Saul Castañeda-Quintana ◽  
Francisco Javier Perez-Trujillo

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