scholarly journals Nano-grating Assisted Light Absorption Enhancement for MSM-PDs Performance Improvement: An Updated Review

Photonics ◽  
2021 ◽  
Vol 8 (12) ◽  
pp. 539
Author(s):  
Narottam Das ◽  
Mohammad Nur-E-Alam ◽  
Alif Islam ◽  
Ain Zulaikha Maslihan Ain

The primary focus of this review article mainly emphasizes the light absorption enhancement for various nanostructured gratings assisted metal-semiconductor-metal photodetectors (MSM-PDs) that are so far proposed and developed for the improvement of light capturing performance. The MSM-PDs are considered as one of the key elements in the optical and high-speed communication systems for applications such as faster optical fiber communication systems, sensor networks, high-speed chip-to-chip interconnects, and high-speed sampling. The light absorption enhancement makes the MSM-PDs an ideal candidate due to their excellent performances in detection, especially in satisfying the high-speed or high-performance device requirements. The nano-grating assisted MSM-PDs are preordained to be decorous for many emerging and existing communication device applications. There have been a significant number of research works conducted on the implementation of nano-gratings, and still, more researches are ongoing to raise the performance of MSM-PDs particularly, in terms of enhancing the light absorption potentialities. This review article aims to provide the latest update on the exertion of nano-grating structures suitable for further developments in the light absorption enhancement of the MSM-PDs.

2019 ◽  
Vol 0 (0) ◽  
Author(s):  
Festus Idowu Oluwajobi ◽  
Nguyen Dong-Nhat ◽  
Amin Malekmohammadi

AbstractIn this paper, the performance of a novel multilevel signaling based on Manchester code namely four-level Manchester Coding (4-MC) technique is investigated for next generation high-speed optical fiber communication links. The performance of 4-MC is studied and compared with conventional Manchester modulation and four-level pulse amplitude modulation (4-PAM) formats in terms of receiver sensitivity, spectral efficiency and dispersion tolerance at the bit rate of 40 Gb/s. The bit error rate (BER) calculation model for the proposed multilevel scheme has also been developed. The calculated receiver sensitivity and the chromatic dispersion tolerance at the BER of 10–9 of the proposed scheme are −22 dBm and 67.5 ps/nm, respectively. It is observed that, 4-MC scheme is superior in comparison to 4-PAM by 3.5 dB in terms of receiver sensitivity in back-to-back scenario. Therefore, the proposed scheme can be considered as an alternative to current 4-PAM system.


1990 ◽  
Vol 01 (03n04) ◽  
pp. 223-243 ◽  
Author(s):  
R.G. SWARTZ ◽  
Y. OTA

Electronics for burst mode data communication over an optical data link will contribute to wider acceptance of photonic technology. This paper describes the concepts and difficulties inherent in burst mode optical communication systems, and proposes a new solution employing an ultra-high speed, high accuracy peak detector. Sensitivity penalties associated with this technique are reviewed. The method was implemented in an optical receiver with dc to 500 Mb/s operation, and at 200 Mb/s, demonstrates an isolated pulse sensitivity of −29.5 dBm, and pulse width distortion less than lns. An example application, the Multiple channel Optical Data LINK (MODLINK), is described: a fully dc-coupled, 12 parallel channel digital data link system designed for high speed optical fiber communication at bit rates ranging from dc to 200 Mb/s per channel, applicable at distances of centimeters to over 3 km.


2000 ◽  
Vol 654 ◽  
Author(s):  
Hirotoshi Nagata ◽  
Yasuyuki Miyama ◽  
Kaoru Higuma ◽  
Yoshihiro Hashimoto ◽  
Futoshi Yamamoto ◽  
...  

AbstractWe present secondary ion mass spectrometry (SIMS) study results on interfaces of LiNbO3 based optoelectronic devices, which have been performed in order to examine the cause of device failures. The devices are widely used in current high-speed optical fiber communication systems, and such investigation from a materials-viewpoint is important to improve the device quality. Especially, the device long-term stability is strongly affected by alkali-contaminants diffused into the SiO2 buffer layer of device, and here we confirmed that an adoption of common Si3N4 passivation is effective in preventing the process-induced contamination without any influence to device performance.


2019 ◽  
Vol 18 (1) ◽  
pp. 27-34
Author(s):  
Alif Islam ◽  
Narottam Das ◽  
Mohammad Mohiuddin Uzzal

In this paper, we have analyzed metal-semiconductor-metal photodetectors (MSM-PDs) with different nano-grating structures or shapes to improve the light absorption capacity into the device in details for high-speed communication systems and networks. The plasmonic-based MSM-PD structure demonstrates a significant improvement in light absorption capacity for the developed device compared to conventional MSM-PDs i.e., devices that have not employed the nano-gratings. The light absorption capacity of the device is varied with the variation of geometrical shapes and parameters of the nano-gratings, such as the nano-grating height, slit width and so on. These nano-grating structures are assisting in light transmission through the central slit (i.e., subwavelength apertures) efficiently, resulting in the excitation of surface plasmon polaritons (SPPs) as the incident photons interact with the nano-gratings/ nano-corrugations. This improved light transmission in the central slit along with excited SPPs results in resonant light absorption in the device. This means the light trapped inside the central slit is triggered by the SPPs to a higher order magnitude. This causes the light absorption enhancement for the device, i.e., more light is transmitted through the device instead of reflecting back to the surface. The simulation results demonstrated that the light absorption enhancement factor (LAEF) for these devices have improved dramatically due to the nano-gratings. For modeling and simulation of these devices, Opti-FDTD tool is used which is based on finite difference time domain (FDTD) method. The application of these simulated devices is in the range of 800-850-nm. The simulation results are suitable for the design of nano-structured MSM-PDs that can be used in high-speed communication systems and sensor network systems.


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