scholarly journals Assessing the Influence of the Sourcing Voltage on Polyaniline Composites for Stress Sensing Applications

Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1164 ◽  
Author(s):  
Andrés Felipe Cruz-Pacheco ◽  
Leonel Paredes-Madrid ◽  
Jahir Orozco ◽  
Jairo Alberto Gómez-Cuaspud ◽  
Carlos R. Batista-Rodríguez ◽  
...  

Polyaniline (PANI) has recently gained great attention due to its outstanding electrical properties and ease of processability; these characteristics make it ideal for the manufacturing of polymer blends. In this study, the processing and piezoresistive characterization of polymer composites resulting from the blend of PANI with ultra-high molecular weight polyethylene (UHMWPE) in different weight percentages (wt %) is reported. The PANI/UHMWPE composites were uniformly homogenized by mechanical mixing and the pellets were manufactured by compression molding. A total of four pellets were manufactured, with PANI percentages of 20, 25, 30 and 35 wt %. Fourier-transform infrared (FTIR) spectroscopy, thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS) were used to confirm the effective distribution of PANI and UHMWPE particles in the pellets. A piezoresistive characterization was performed on the basis of compressive forces at different voltages; it was found that the error metrics of hysteresis and drift were influenced by the operating voltage. In general, larger voltages lowered the error metrics, but a reduction in sensor sensitivity came along with voltage increments. In an attempt to explain such a phenomenon, the authors developed a microscopic model for the piezoresistive response of PANI composites, aiming towards a broader usage of PANI composites in strain/stress sensing applications as an alternative to carbonaceous materials.

2015 ◽  
Vol 25 (1-2) ◽  
pp. 160-169 ◽  
Author(s):  
Kesavan Ravi ◽  
Yuji Ichikawa ◽  
Kazuhiro Ogawa ◽  
Tiana Deplancke ◽  
Olivier Lame ◽  
...  

2014 ◽  
Vol 198 ◽  
pp. 115-121 ◽  
Author(s):  
Mohamed Shaban ◽  
Ashour M. Ahmed ◽  
Ehab Abdel-Rahman ◽  
Hany Hamdy

1995 ◽  
Vol 78 (9) ◽  
pp. 2476-2480 ◽  
Author(s):  
Joseph S. Capurso ◽  
Aldo B. Alles ◽  
Walter A. Schulze

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.


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