Processing of Laminated Barium Titanate Structures for Stress-Sensing Applications

1995 ◽  
Vol 78 (9) ◽  
pp. 2476-2480 ◽  
Author(s):  
Joseph S. Capurso ◽  
Aldo B. Alles ◽  
Walter A. Schulze
Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1164 ◽  
Author(s):  
Andrés Felipe Cruz-Pacheco ◽  
Leonel Paredes-Madrid ◽  
Jahir Orozco ◽  
Jairo Alberto Gómez-Cuaspud ◽  
Carlos R. Batista-Rodríguez ◽  
...  

Polyaniline (PANI) has recently gained great attention due to its outstanding electrical properties and ease of processability; these characteristics make it ideal for the manufacturing of polymer blends. In this study, the processing and piezoresistive characterization of polymer composites resulting from the blend of PANI with ultra-high molecular weight polyethylene (UHMWPE) in different weight percentages (wt %) is reported. The PANI/UHMWPE composites were uniformly homogenized by mechanical mixing and the pellets were manufactured by compression molding. A total of four pellets were manufactured, with PANI percentages of 20, 25, 30 and 35 wt %. Fourier-transform infrared (FTIR) spectroscopy, thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS) were used to confirm the effective distribution of PANI and UHMWPE particles in the pellets. A piezoresistive characterization was performed on the basis of compressive forces at different voltages; it was found that the error metrics of hysteresis and drift were influenced by the operating voltage. In general, larger voltages lowered the error metrics, but a reduction in sensor sensitivity came along with voltage increments. In an attempt to explain such a phenomenon, the authors developed a microscopic model for the piezoresistive response of PANI composites, aiming towards a broader usage of PANI composites in strain/stress sensing applications as an alternative to carbonaceous materials.


2017 ◽  
Vol 733 ◽  
pp. 3-7 ◽  
Author(s):  
Afzaal Qamar ◽  
Dzung Viet Dao ◽  
Ji Sheng Han ◽  
Alan Iacopi ◽  
Toan Dinh ◽  
...  

This article reports the first results on stress induced pseudo-Hall effect in single crystal n-type 3C-SiC(100) grown by LPCVD process. After the growth process, Hall devices were fabricated by standard photolithography and dry etching processes. The bending beam method was employed to study the stress induced changes in the electrical response of the fabricated Hall devices. It has been observed that when stress is applied to the 3C-SiC(100) Hall devices, the offset voltage of the Hall devices varies linearly with the applied compressive and tensile stresses which is called, the pseudo-Hall effect. The variation of the offset voltage of these Hall devices is also proportional to the applied input current. This variation of the offset voltage with the applied compressive and tensile stresses shows that single crystal n-type 3C-SiC(100) can be used for stress sensing applications.


2018 ◽  
Vol 213 ◽  
pp. 11-14 ◽  
Author(s):  
Afzaal Qamar ◽  
Toan Dinh ◽  
Mohsen Jafari ◽  
Alan Iacopi ◽  
Sima Dimitrijev ◽  
...  

Author(s):  
Jason Clendenin ◽  
Husein Rokadia ◽  
Steve Tung ◽  
Konye Ogburia

This paper reports the development of a MEMS based aligned carbon nanotube, thermal surface shear stress sensor for micro shear stress sensing applications. This paper is focused on the theory of alignment of CNTs during sensing element fabrication as well as experimental and calibration results from sensor testing. It is found that CNTs can be routinely aligned between surface micromachined gold electrodes using AC dielectrophoresis to form shear stress sensing elements. In order to fabricate the sensing element, a 25 Vp-p electric field at 3 MHz was used to form a ~150 μm wide line of aligned CNTs. The measured resistance of the sensing element was 580 Ω. The fabricated CNT shear stress sensor has been tested by bonding a Plexiglas channel to the electrode chip in order to create a 2D internal flow. The CNT shear stress sensor was found to have an average TCR of −0.0112%/°C or −0.0691Ω/°C and a current to voltage ratio of 0.07 mA/V.


2017 ◽  
Vol 10 (05) ◽  
pp. 1750060 ◽  
Author(s):  
Alexander Yoffe ◽  
Hadas Kaniel ◽  
Doron Shilo

Stress induced magnetic field changes in epoxy-based Terfenol-D composite materials offer a unique way for stress sensing by using a remote magnetic field sensor. In this paper, we report simultaneous measurements of the stress, strain and emitted magnetic field during compressive tests performed at different temperatures in the range of [Formula: see text]C–65[Formula: see text]C. The observed results are explained based on the physical processes that occur at different stresses and temperature ranges. Measurement results reveal a temperature range ([Formula: see text]C–45[Formula: see text]C) suitable for stress sensing applications, at which the reverse magnetostrictive response is almost temperature insensitive. At 65[Formula: see text]C, the epoxy demonstrated a significant softening due to the glass transition, indicating that a high glass transition temperature is an important desired property for the epoxy matrix.


Author(s):  
Jason Clendenin ◽  
Yong Xu ◽  
Steve Tung

This paper reports the development of a novel method for determining the pressure sensitivity of two types of surface micromachined underwater shear stress sensor skins for micro shear stress sensing applications. The two types of sensors consisted of a thin-diaphragm sensor and a thick-diaphragm sensor. The focus is on the use of a combination of metrology and numerical simulation to theoretically determine the pressure sensitivity of the sensors and compare to experimental data. Using this combination, the nitride diaphragm deflection, the intrinsic stress of the diaphragm, and the piezoresistive gauge factor of the polysilicon sensing element were successfully determined. For the thin-diaphragm sensor, the tensile intrinsic stress and gauge factor were determined to be 28 MPa and 4, respectively. For the thick diaphragm sensor, the average tensile intrinsic stress and gauge factor were 48 MPa and 12, respectively. Using these numbers, the pressure sensitivity of the shear stress sensors was successfully modeled and verified against experimental results.


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