scholarly journals Equivalent Circuit-Based Open-Circuit Sensitivity Modelling of a Capacitive-Type MEMS Acoustic Sensor on Wafer Level

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 725
Author(s):  
Jaewoo Lee ◽  
Jong-Pil Im ◽  
Jeong-Hun Kim ◽  
Sol-Yee Lim ◽  
Seung-Eon Moon
Keyword(s):  
Residual Stress ◽  
Equivalent Circuit ◽  
Field Method ◽  
Open Circuit ◽  
Effective Radius ◽  
Acoustic Sensor ◽  
Wafer Level ◽  
Back Plate ◽  
Fringing Field ◽  
Electric Field Method

Equivalent circuit-based analytical open-circuit sensitivity modelling of a capacitive-type MEMS acoustic sensor for Internet of things (IoT) application is presented. It can not only evaluate simply the characteristic of the sensitivity on wafer level, but also improve the accuracy of the sensitivity due to including the fringing field between the diaphragm and each etching hole in the back-plate. The effective capacitor model is obtained by applying the approximately linearized electric-field method (ALEM), resulting in the equivalent circuit-based dynamic model. From the sensor with a 325 µm-radius diaphragm, the effective radius and the effective residual stress of the diaphragm were extracted to be 299 µm and +23.0 MPa, respectively. With the pull-in voltage of. 12.0 V and the pad capacitance of 0.23 pF; the open-circuit sensitivity was modelled to 11.3 mV/Pa at 1 kHz in the bias of 10 V.

scholarly journals Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor

Sensors ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 488
Author(s):  
Jaewoo Lee ◽  
Jong-Pil Im ◽  
Jeong-Hun Kim ◽  
Sol-Yee Lim ◽  
Seung-Eon Moon
Keyword(s):  
Integrated Circuit ◽  
Mixed Model ◽  
Fem Simulation ◽  
Calibration Method ◽  
Open Circuit ◽  
Electrical Circuit ◽  
Acoustic Sensor ◽  
Wafer Level ◽  
Back Plate ◽  
Lumped Parameters

We present a simple, accurate open-circuit sensitivity model based on both analytically calculated lumped and empirically extracted lumped-parameters that enables a capacitive acoustic sensor to be efficiently characterized in the frequency domain at the wafer level. Our mixed model is mainly composed of two key strategies: the approximately linearized electric-field method (ALEM) and the open- and short-calibration method (OSCM). Analytical ALEM can separate the intrinsic capacitance from the capacitance of the acoustic sensor itself, while empirical OSCM, on the basis of one additional test sample excluding the membrane, can extract the capacitance value of the active part from the entire sensor chip. FEM simulation verified the validity of the model within an error range of 2% in the unit cell. Dynamic open-circuit sensitivity is modelled from lumped parameters based on the equivalent electrical circuit, leading to a modelled resonance frequency under a bias condition. Thus, eliminating a complex read-out integrated circuit (ROIC) integration process, this mixed model not only simplifies the characterization process, but also improves the accuracy of the sensitivity because it considers the fringing field effect between the diaphragm and each etching hole in the back plate.

scholarly journals Understanding Photovoltaic Cell Dynamic Resistance Behavior with Changing Incident Light Intensity - draftv1.pdf

2019 ◽  
Author(s):  
FRANCISCO J. GARCIA-SANCHEZ
Keyword(s):  
Equivalent Circuit ◽  
Cell Model ◽  
Short Circuit ◽  
Incident Light ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Photovoltaic Device ◽  
Dynamic Resistance ◽  
Analytic Expressions ◽  
Static Conditions

A theoretical examination of the general behavior that should be expected to be displayed by the magnitude of the dynamic resistance of a conventional illuminated photovoltaic device within the power-generating quadrant of its <i>I-V</i> characteristics, when measured in quasi-static conditions from the short-circuit point to the open-circuit point, at various incident illumination intensities. The analysis is based on assuming that the photovoltaic device in question may be adequately described by a simple conventional d-c lumped-element single-diode equivalent circuit solar cell model, which includes significant constant series and shunt resistive losses, but lacks any other secondary effects. Using explicit analytic expressions for the dynamic resistance, we elucidate how its magnitude changes as a function of the terminal variables, the incident illumination intensity and the model’s equivalent circuit elements’ parameters.

scholarly journals An Adaptive Estimation Scheme for Open-Circuit Voltage of Power Lithium-Ion Battery

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
Yun Zhang ◽  
Chenghui Zhang ◽  
Naxin Cui
Keyword(s):  
Lithium Ion Battery ◽  
Equivalent Circuit ◽  
Open Circuit Voltage ◽  
Adaptive Estimation ◽  
Equivalent Circuit Model ◽  
Lithium Ion ◽  
Open Circuit ◽  
Adaptive Scheme ◽  
Power Battery ◽  
Estimation Scheme

Open-circuit voltage (OCV) is one of the most important parameters in determining state of charge (SoC) of power battery. The direct measurement of it is costly and time consuming. This paper describes an adaptive scheme that can be used to derive OCV of the power battery. The scheme only uses the measurable input (terminal current) and the measurable output (terminal voltage) signals of the battery system and is simple enough to enable online implement. Firstly an equivalent circuit model is employed to describe the polarization characteristic and the dynamic behavior of the lithium-ion battery; the state-space representation of the electrical performance for the battery is obtained based on the equivalent circuit model. Then the implementation procedure of the adaptive scheme is given; also the asymptotic convergence of the observer error and the boundedness of all the parameter estimates are proven. Finally, experiments are carried out, and the effectiveness of the adaptive estimation scheme is validated by the experimental results.

The Results And Perspectives Of Using Marine Transient Electric Field Method (Matem) On Arctic Offshore

2004 ◽  
Author(s):  
P.Yu. Legeydo ◽  
E.D. Lisitsyn ◽  
Yu.F. Moiseev ◽  
A.I. Raykovitch ◽  
V.S. Kovalenko
Keyword(s):  
Electric Field ◽  
Field Method ◽  
Electric Field Method ◽  
Transient Electric Field

Residual Stress in Silicon Caused by Cu-Sn Wafer-Level Packaging

2013 ◽  
Author(s):  
Maaike M. V. Taklo ◽  
Astrid-Sofie Vardøy ◽  
Ingrid De Wolf ◽  
Veerle Simons ◽  
H. J. van de Wiel ◽  
...  
Keyword(s):  
Residual Stress ◽  
Integrated Circuit ◽  
High Performance ◽  
White Light Interferometry ◽  
Wafer Level ◽  
Noticeable Effect ◽  
Micro Raman Spectroscopy ◽  
Wafer Level Packaging ◽  
Mems Device ◽  
Specific Technology

The level of stress in silicon as a result of applying Cu-Sn SLID wafer level bonding to hermetically encapsulate a high-performance infrared bolometer device was studied. Transistors are present in the read out integrated circuit (ROIC) of the device and some are located below the bond frame. Test vehicles were assembled using Cu-Sn SLID bonding and micro-Raman spectroscopy was applied on cross sectioned samples to measure stress in the silicon near the bond frame. The test vehicles contained cavities and the bulging of the structures was studied using white light interferometry. The test vehicles were thermally stressed to study possible effects of the treatments on the level of stress in the silicon. Finite element modeling was performed to support the understanding of the various observations. The measurements indicated levels of stress in the silicon that can affect transistors in regions up to 15 μm below the bond frame. The observed levels of stress corresponded well with the performed modeling. However, no noticeable effect was found for the ROIC used in this work. The specific technology used for the fabrication of the ROIC of a MEMS device is thus decisive. The level of stress did not appear to change as a result of the imposed thermal stress. The level of stress caused by the bond frame can be expected to stay constant throughout the lifetime of a device.

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