scholarly journals A Fully-Differential Switched-Capacitor Dual-Slope Capacitance-To-Digital Converter (CDC) for a Capacitive Pressure Sensor

Sensors ◽  
2019 ◽  
Vol 19 (17) ◽  
pp. 3673
Author(s):  
Christopher Rogi ◽  
Cesare Buffa ◽  
Niccolo De Milleri ◽  
Richard Gaggl ◽  
Enrique Prefasi
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Ambient Air ◽  
Micro Electro Mechanical System ◽  
Switched Capacitor ◽  
Capacitive Pressure Sensor ◽  
Fully Differential ◽  
Sensor Model ◽  
Low Performance ◽  
On Chip

This article focuses on a proposed Switched-Capacitor Dual-Slope based CDC. Special attention is paid to the measurement setup using a real pressure sensor. Performance scaling potential as well as dead zones are pointed out and discussed. In depth knowledge of the physical sensor behavior is key to design an optimal readout circuit. While this is true for high-end applications, low-performance IoT (Internet of Things) sensors aim at moderate resolution with very low power consumption. This article also provides insights into basic MEMS (Micro-Electro-Mechanical-System) physics. Based on that, an ambient air pressure sensor model for SPICE (Simulation-Program-with-Integrated-Circuit-Emphasis) circuit simulators is presented. The converter concept was proven on silicon in a 0.13 μ m process using both a real pressure sensor and an on-chip dummy MEMS bridge. A 3.2-ms measurement results in 13-bit resolution while consuming 35 μ A from a 1.5-V supply occupying 0.148 mm2. A state-of-the-art comparison identifies potential room for improvements towards hybrid solutions, which is proposed in subsequent publications already.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Development and Experimental Validation of a Non-Linear, All-Elastomer In-Plane Capacitive Pressure Sensor Model

2017 ◽  
Vol 17 (2) ◽  
pp. 274-285 ◽  
Author(s):  
Kourosh M. Kalayeh ◽  
Alexi Charalambides ◽  
Sarah Bergbreiter ◽  
Panos G. Charalambides
Keyword(s):  
Pressure Sensor ◽  
Experimental Validation ◽  
Capacitive Pressure Sensor ◽  
Sensor Model ◽  
Non Linear

scholarly journals An ultra-low noise capacitance to voltage converter for sensor applications in 0.35  µm CMOS

2017 ◽  
Vol 6 (2) ◽  
pp. 285-301 ◽  
Author(s):  
Alexander Utz ◽  
Christian Walk ◽  
Norbert Haas ◽  
Tatjana Fedtschenko ◽  
Alexander Stanitzki ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Signal To Noise Ratio ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Micro Electro Mechanical System ◽  
Low Noise ◽  
Capacitive Pressure Sensor ◽  
Sensor Applications ◽  
Wide Range ◽  
Ultra Low Noise

Abstract. In this paper we present a readout circuit for capacitive micro-electro-mechanical system (MEMS) sensors such as accelerometers, gyroscopes or pressure sensors. A flexible interface allows connection of a wide range of types of sensing elements. The ASIC (application-specific integrated circuit) was designed with a focus on ultra-low noise operation and high analog measurement performance. Theoretical considerations on system noise are presented which lead to design requirements affecting the reachable overall measurement performance. Special emphasis is put on the design of the fully differential operational amplifiers, as these have the dominant influence on the achievable overall performance. The measured input referred noise is below 50 zF/Hz within a bandwidth of 10 Hz to 10 kHz. Four adjustable gain settings allow the adaption to measurement ranges from ±750 fF to ±3 pF. This ensures compatibility with a wide range of sensor applications. The full input signal bandwidth ranges from 0 Hz to more than 50 kHz. A high-precision accelerometer system was built from the described ASIC and a high-sensitivity, low-noise sensor MEMS. The design of the MEMS is outlined and the overall system performance, which yields a combined noise floor of 200 ng/Hz, is demonstrated. Finally, we show an application using the ASIC together with a CMOS integrated capacitive pressure sensor, which yields a measurement signal-to-noise ratio (SNR) of more than 100 dB.

scholarly journals Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

2017 ◽  
Author(s):  
Maximilian C. Scardelletti ◽  
Philip G. Neudeck ◽  
David J. Spry ◽  
Roger D. Meredith ◽  
Jennifer L. Jordan ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Integrated Circuit ◽  
Ring Oscillators ◽  
Capacitive Pressure Sensor

A homodyne transceiver MMIC using SiGe:C technology for 60 GHz wireless applications

2011 ◽  
Vol 3 (2) ◽  
pp. 147-155 ◽  
Author(s):  
Hans Peter Forstner ◽  
Markus Ortner ◽  
Ludger Verweyen ◽  
Herbert Knapp
Keyword(s):  
Integrated Circuit ◽  
Noise Figure ◽  
Intermediate Frequency ◽  
Maximum Output ◽  
Voltage Controlled Oscillator ◽  
60 Ghz ◽  
Monolithic Integrated Circuit ◽  
Fully Differential ◽  
Operational Frequency ◽  
On Chip

A highly integrated transceiver microwave monolithic integrated circuit (MMIC) manufactured in a 200-GHz SiGe:C production technology is presented, applicable for sensing- and broadband communication applications. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises an LO signal generation unit based on a wideband 60 GHz fundamental Voltage Controlled Oscillator (VCO) and an on-chip prescaler, covering the full operational frequency band of 57–64 GHz. Within this bandwidth, the upconverter exhibits an upconversion gain of 23.6–26.4 dB and a maximum output-referred 1-dB compression point of 14 dBm. The downconverter provides a Double Sideband (DSB) noise figure of 9–12 dB with a downconversion gain of 37–71 dB. On chip AC-coupling of the receiver IF-output with a lower −3 dB cut-off frequency as low as 16 kHz eliminates mixer DC-offsets and enables on-chip Intermediate Frequency (IF) amplification. The whole transceiver MMIC draws a current of 415 mA from a single 3.3 V supply and requires few components externally to the chip.

Sign in / Sign up

Export Citation Format

Share Document