scholarly journals Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga2O3 Thin Films

Sensors ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 129 ◽  
Author(s):  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Feifei Li ◽  
Deliang Zhu ◽  
Shun Han ◽  
...  

A high-performance solar-blind photodetector with a metal–semiconductor–metal structure was fabricated based on amorphous In-doped Ga2O3 thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.9 μs) and a rapid decay time (230 μs). The detection range was broadened compared with an individual Ga2O3 photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity.

2018 ◽  
Vol 766 ◽  
pp. 601-608 ◽  
Author(s):  
Hao Shen ◽  
Yinong Yin ◽  
Kun Tian ◽  
Karthikeyan Baskaran ◽  
Libing Duan ◽  
...  

Author(s):  
Manni Chen ◽  
Zhipeng Zhang ◽  
Zesheng Lv ◽  
Runze Zhan ◽  
Huanjun Chen ◽  
...  
Keyword(s):  

Author(s):  
Arindom Datta ◽  
Hongseok Choi ◽  
Xiaochun Li

It is of interest to obtain the thermomechanical response of tools, equipment, and structural components in a real manufacturing environment. Microfabricated thin film thermocouples and strain gages are attractive for their small size and fast response. It is novel and challenging to fabricate these sensors on metal substrate and finally embed them into location of interest. Consequently, the materials (dielectric and metallic) constituting the sensor need to be characterized and optimized properly for reliability. We present here results of characterization and optimization of materials making a thermomechanical sensor to be embedded in metal structure.


2021 ◽  
Vol 68 (3) ◽  
pp. 1101-1106
Author(s):  
Yong Fang ◽  
Zhiwei Zhao ◽  
Mengru Zhu ◽  
Zhengjin Weng ◽  
Chao Fang ◽  
...  

2012 ◽  
Vol 33 (7) ◽  
pp. 1033-1035 ◽  
Author(s):  
Qinghong Zheng ◽  
Feng Huang ◽  
Jin Huang ◽  
Qichan Hu ◽  
Dagui Chen ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 119
Author(s):  
Anastasiia Tukmakova ◽  
Ivan Tkhorzhevskiy ◽  
Artyom Sedinin ◽  
Aleksei Asach ◽  
Anna Novotelnova ◽  
...  

Terahertz (THz) filters and detectors can find a wide application in such fields as: sensing, imaging, security systems, medicine, wireless connection, and detection of substances. Thermoelectric materials are promising basis for THz detectors’ development due to their sensitivity to the THz radiation, possibility to be heated under the THz radiation and produce voltage due to Seebeck effect. Thermoelectric thin films of Bi-Sb solid solutions are semimetals/semiconductors with the band gap comparable with THz energy and with high thermoelectric conversion efficiency at room temperature. Detecting film surface can be transformed into a periodic frequency selective surface (FSS) that can operate as a frequency filter and increases the absorption of THz radiation. We report for the first time about the simulation of THz detector based on thermoelectric Bi-Sb thin-filmed frequency-selective surface. We show that such structure can be both detector and frequency filter. Moreover, it was shown that FSS design increases not only a heating due to absorption but a temperature gradient in Bi-Sb film by two orders of magnitude in comparison with continuous films. Local temperature gradients can reach the values of the order of 100 K·mm−1. That opens new perspectives for thin-filmed thermoelectric detectors’ efficiency increase. Temperature difference formed due to THz radiation absorption can reach values on the order of 1 degree. Frequency-transient calculations show the power dependence of film temperature on time with characteristic saturation at times around several ms. That points to the perspective of reaching fast response times on such structures.


1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.


2017 ◽  
Vol 13 (6) ◽  
pp. 483-488 ◽  
Author(s):  
Daoyou Guo ◽  
Xinyuan Qin ◽  
Ming Lv ◽  
Haoze Shi ◽  
Yuanli Su ◽  
...  

2018 ◽  
Vol 18 (5) ◽  
pp. 3613-3618 ◽  
Author(s):  
W Cui ◽  
Q Ren ◽  
Y. S Zhi ◽  
X. L Zhao ◽  
Z. P Wu ◽  
...  

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