Faculty Opinions recommendation of Base-stacking and base-pairing contributions into thermal stability of the DNA double helix.

2007 ◽  
Author(s):  
James Stivers
Keyword(s):  
Thermal Stability ◽  
Double Helix ◽  
Base Pairing ◽  
Base Stacking ◽  
Dna Double Helix ◽  
Thermal Stability Of

scholarly journals Affinity studies of hypocrellin B and mono-cysteine substituted hypocrellin B with CT-DNA using spectroscopic methods

2005 ◽  
Vol 19 (5,6) ◽  
pp. 259-266 ◽  
Author(s):  
Shaohua Wei ◽  
Jiahong Zhou ◽  
Yuying Feng ◽  
Deyin Huang ◽  
Xuesong Wang ◽  
...  
Keyword(s):  
Deoxyribonucleic Acid ◽  
Double Helix ◽  
Cd Spectroscopy ◽  
Base Stacking ◽  
Calf Thymus ◽  
Visible Spectra ◽  
Hypocrellin B ◽  
Uv Visible ◽  
Dna Double Helix ◽  
Ct Dna

The interaction of anticancer drug hypocrellin B (HB) and mono-cysteine substituted hypocrellin B (MCHB) with calf thymus deoxyribonucleic acid (CT-DNA) has been investigated using spectral methods. The results of UV–visible spectra showed that the HB and MCHB can intercalate into the base-stacking domain of the CT-DNA double helix. Further studies based on fluorescence spectroscopy and circular dichroism (CD) spectroscopy also supported the intercalation mechanism.

DNA: Not Merely the Secret of Life

2010 ◽  
Author(s):  
Nadrian C. Seeman
Keyword(s):  
Double Helix ◽  
Genetic Material ◽  
Helical Structure ◽  
Prominent Feature ◽  
Base Pairing ◽  
Double Helical Structure ◽  
Reciprocal Exchange ◽  
Sequence Selection ◽  
Living Organisms ◽  
Dna Double Helix

DNA is well-known as the genetic material of living organisms. Its most prominent feature is that it contains information that enables it to replicate itself. This information is contained in the well-known Watson-Crick base pairing interactions, adenine with thymine and guanine with cytosine. The double helical structure that results from this complementarity has become a cultural icon of our era. To produce species more diverse than the DNA double helix, we use the notion of reciprocal exchange, which leads to branched molecules. The topologies of these species are readily programmed through sequence selection; in many cases, it is also possible to program their structures. Branched species can be connected to one another using the same interactions that genetic engineers use to produce their constructs, cohesion by molecules tailed in complementary single-stranded overhangs, known as ‘sticky ends.’ Such sticky-ended cohesion is used to produce N-connected objects and lattices [1]. This notion is shown in the drawing, which shows cohesion between sticky-ended branched species.

New Base Pairing Motifs. The Synthesis and Thermal Stability of Oligodeoxynucleotides Containing Imidazopyridopyrimidine Nucleosides with the Ability to Form Four Hydrogen Bonds

2003 ◽  
Vol 125 (33) ◽  
pp. 9970-9982 ◽  
Author(s):  
Noriaki Minakawa ◽  
Naoshi Kojima ◽  
Sadao Hikishima ◽  
Takashi Sasaki ◽  
Arihiro Kiyosue ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Hydrogen Bonds ◽  
Base Pairing ◽  
Thermal Stability Of

scholarly journals On the deletion of inverted repeated DNA in Escherichia coli: effects of length, thermal stability, and cruciform formation in vivo.

Genetics ◽  
1991 ◽  
Vol 129 (4) ◽  
pp. 991-1005 ◽  
Author(s):  
R R Sinden ◽  
G X Zheng ◽  
R G Brankamp ◽  
K N Allen
Keyword(s):  
Thermal Stability ◽  
Current Model ◽  
Chemical Properties ◽  
Inverted Repeats ◽  
Direct Repeats ◽  
Base Pairing ◽  
The Relationship ◽  
Thermal Stability Of ◽  
Deletion Frequency

Abstract We have studied the deletion of inverted repeats cloned into the EcoRI site within the CAT gene of plasmid pBR325. A cloned inverted repeat constitutes a palindrome that includes both EcoRI sites flanking the insert. In addition, the two EcoRI sites represent direct repeats flanking a region of palindromic symmetry. A current model for deletion between direct repeats involves the formation of DNA secondary structure which may stabilize the misalignment between the direct repeats during DNA replication. Our results are consistent with this model. We have analyzed deletion frequencies for several series of inverted repeats, ranging from 42 to 106 bp, that were designed to form cruciforms at low temperatures and at low superhelical densities. We demonstrate that length, thermal stability of base pairing in the hairpin stem, and ease of cruciform formation affect the frequency of deletion. In general, longer palindromes are less stable than shorter ones. The deletion frequency may be dependent on the thermal stability of base pairing involving approximately 16-20 bp from the base of the hairpin stem. The formation of cruciforms in vivo leads to a significant increase in the deletion frequency. A kinetic model is presented to describe the relationship between the physical-chemical properties of DNA structure and the deletion of inverted repeats in living cells.

Protamine-DNA interaction

1978 ◽  
Vol 36 (2) ◽  
pp. 200-201
Author(s):  
D.P. Bazett-Jones ◽  
F.P. Ottensmeyer
Keyword(s):  
Small Volume ◽  
Double Helix ◽  
Dna Interaction ◽  
Dark Field ◽  
Sperm Head ◽  
Nuclear Proteins ◽  
Field Electron Microscopy ◽  
Dark Field Electron ◽  
Dna Double Helix ◽  
Positively Charged

Dark field electron microscopy has been used for the study of the structure of individual macromolecules with a resolution to at least the 5Å level. The use of this technique has been extended to the investigation of structure of interacting molecules, particularly the interaction between DNA and fish protamine, a class of basic nuclear proteins of molecular weight 4,000 daltons.Protamine, which is synthesized during spermatogenesis, binds to chromatin, displaces the somatic histones and wraps up the DNA to fit into the small volume of the sperm head. It has been proposed that protamine, existing as an extended polypeptide, winds around the minor groove of the DNA double helix, with protamine's positively-charged arginines lining up with the negatively-charged phosphates of DNA. However, viewing protamine as an extended protein is inconsistent with the results obtained in our laboratory.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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