Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

2020 ◽  
Vol 59 (SM) ◽  
pp. SMMC02
Author(s):  
Hyeokjin Kim ◽  
Giyoun Roh ◽  
Bongkoo Kang
Keyword(s):  
Channel Length ◽  
Interface States ◽  
Strained Si ◽  
Hot Carrier ◽  
Length Dependence ◽  
Hot Carrier Degradation

On the channel-length dependence of the hot-carrier degradation of n-channel MOSFETs

1989 ◽  
Vol 10 (12) ◽  
pp. 553-555 ◽  
Author(s):  
R. Bellens ◽  
P. Heremans ◽  
G. Groeseneken ◽  
H.E. Maes
Keyword(s):  
Channel Length ◽  
Hot Carrier ◽  
Length Dependence ◽  
Hot Carrier Degradation

Channel-length-independent hot-carrier degradation in analog p-MOS operation

1992 ◽  
Vol 13 (11) ◽  
pp. 590-592 ◽  
Author(s):  
R. Thewes ◽  
M. Broz ◽  
G. Tempel ◽  
W. Weber ◽  
K. Goser
Keyword(s):  
Channel Length ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs

2015 ◽  
Vol 32 (8) ◽  
pp. 088502
Author(s):  
Chun-Wei Zhang ◽  
Si-Yang Liu ◽  
Wei-Feng Sun ◽  
Lei-Lei Zhou ◽  
Yi Zhang ◽  
...  
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Hot Carrier ◽  
Length Dependence
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