Preparation of 1-μm-thick Y-doped HfO2 ferroelectric films on (111)Pt/TiOx/SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

2021 ◽  
Author(s):  
Reijiro Shimura ◽  
Takanori Mimura ◽  
Akinori Tateyama ◽  
Takao Shimizu ◽  
Tomoaki Yamada ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Ferroelectric And Piezoelectric Properties

Structural, optical, magnetic, ferroelectric, and piezoelectric properties of (Pb,Ba)(Ti,Fe)O3 perovskites: a macroscopic and nanoscale properties approach

2016 ◽  
Vol 4 (39) ◽  
pp. 9331-9342 ◽  
Author(s):  
F. M. Pontes ◽  
A. J. Chiquito ◽  
W. B. Bastos ◽  
Marcelo A. Pereira-da-Silva ◽  
E. Longo
Keyword(s):  
Chemical Solution Deposition ◽  
Single Phase ◽  
Piezoelectric Properties ◽  
Fe Doping ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Polycrystalline Thin Films ◽  
Ferroelectric And Piezoelectric Properties

Single-phase Pb0.50Ba0.50Ti1−xFexO3 (PBTF) polycrystalline thin films with different Fe doping contents were prepared on Pt/Ti/SiO2/Si substrates using a chemical solution deposition method.

Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates

2014 ◽  
Vol 40 (1) ◽  
pp. 1013-1018 ◽  
Author(s):  
Minh D. Nguyen ◽  
Thong Q. Trinh ◽  
Matthijn Dekkers ◽  
Evert P. Houwman ◽  
Hung N. Vu ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Lead Zirconate ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
Ferroelectric And Piezoelectric Properties

TEM Study for Self-Orientated LaNiO3 Film along [100]

2013 ◽  
Vol 582 ◽  
pp. 185-188
Author(s):  
Naonori Sakamoto ◽  
Kotaro Ozawa ◽  
Kohei Murakoshi ◽  
Tomoya Ohno ◽  
Takanori Kiguchi ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Film Plane ◽  
Lattice Matching ◽  
Si Substrates ◽  
Oxide Electrodes ◽  
Transmission Electron ◽  
Pzt Films ◽  
Perovskite Type ◽  
Type Crystal ◽  
Ferroelectric And Piezoelectric Properties

LaNiO3 (LNO) is known as a candidate for oxide electrodes with perovskite type crystal structure which is suitable for lattice matching with conventional perovskite ferroelectrics, Pb (Zr,Ti)O3 (PZT), BaTiO3 (BTO), etc. We have been investigating thermal expansion effects of the LNO film with PZT/LNO/Si and BTO/LNO/Si structures, where ferroelectric and piezoelectric properties are enhanced by a compressive thermals stress impressed from the LNO layer to the ferrelectric films. The ferroelectric films also shows high [00 orientation owing to [100] orientation of the LNO film. In the present study, further investigation of the LNO films prepared on Si substrates by CSD method is made by transmission electron microscopy (TEM) in order to understand self-orientation along [100] perpendicular to the film plane which effectively leads orientation of PZT films prepared on the LNO film. The results obviously indicates that the 1 layer deposited LNO film has almost no orientation, whereas it shows tendency of orientation of [100] perpendicular to the film plane when the layer number increased.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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