Abstract
We propose an optical phase modulator with a hybrid metal-oxide-semiconductor (MOS) capacitor, consisting of single-layer graphene and III-V semiconductor waveguide. The proposed modulator is numerically analyzed in conjunction with the surface conductivity model of graphene. Since the absorption of graphene at a 2 µm wavelength can be suppressed by modulating the chemical potential of graphene with the practical gate bias, the phase modulation efficiency is predicted to be 0.051 V·cm with a total insertion loss of 0.85 dB when an n-InGaAs waveguide is used, showing the feasibility of the low-loss, high-efficiency graphene/III-V hybrid MOS optical phase modulator, which is useful in the future 2-µm optical fiber communication band.
Si Microring Resonator Optical Switch based on Optical Phase Shifter with Ultrathin-InP/Si Hybrid Metal-Oxide-Semiconductor Capacitor
