130 mA/mm β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
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1993 ◽
Vol 64
(10)
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pp. 3024-3025
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1994 ◽
Vol 33
(Part 1, No. 12A)
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pp. 6481-6485
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1996 ◽
Vol 35
(Part 2, No. 7B)
◽
pp. L930-L932
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