Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction

To investigate the effect of plasma-incorporated fluorine on Si donors in pseudomorphic-high electron mobility transistors (P-HEMTs), we used x-ray photoemission spectroscopy to analyze three layers near the Si δ-doped layer and the Si δ-doped layer itself, in which we previously found fluorine accumulation after post-thermal annealing following fluorocarbon-based plasma exposure. For this evaluation, we developed controllable and low-speed AlGaAs wet-chemical etching using citric-acid-based wet etchant. We used it to expose one of the layers to be analyzed: one 7.5 nm above the Si δ-doped layer, one 1.5 nm above it, the δ-doped layer itself, and one 1.5 nm below it. We found that the accumulated fluorine localized in the δ-doped layer and reacted with Si donors. This is apparently the main reason for the carrier passivation in the fluorocarbon-based plasma-exposed P-HEMTs.

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Fabrication of 150-nm gate-length high electron mobility transistors using x-ray lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587412 ◽

1994 ◽

Vol 12 (6) ◽

pp. 3970 ◽

Cited By ~ 2

Author(s):

A. M. Haghiri-Gosnet

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

X Ray ◽

Electron Mobility Transistors

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Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/s0168-9002(01)00849-x ◽

2001 ◽

Vol 466 (1) ◽

pp. 226-231 ◽

Cited By ~ 1

Author(s):

D.A. Boardman ◽

P.J. Sellin

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

X Ray ◽

Electron Mobility Transistors ◽

X Ray Imaging ◽

Imaging Sensor

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Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

Sensors ◽

10.3390/s18092795 ◽

2018 ◽

Vol 18 (9) ◽

pp. 2795 ◽

Cited By ~ 1

Author(s):

Pin-Guang Chen ◽

Kuan-Ting Chen ◽

Ming Tang ◽

Zheng-Ying Wang ◽

Yu-Chen Chou ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

X Ray Diffraction ◽

Reciprocal Space Mapping ◽

High Electron Mobility ◽

Sensor Applications ◽

Electron Mobility Transistors ◽

Transition Effects ◽

Steep Subthreshold Slope

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.

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The Relationship between InGaAs Channel Layer Thickness and Device Performance in High Electron Mobility Transistors

MRS Proceedings ◽

10.1557/proc-340-327 ◽

1994 ◽

Vol 340 ◽

Cited By ~ 2

Author(s):

M. Meshkinpour ◽

M. S. Goorsky ◽

D. C. Streit ◽

T. Block ◽

M. Wojtowicz ◽

...

Keyword(s):

Electron Mobility ◽

Effective Means ◽

High Electron Mobility Transistors ◽

Misfit Dislocations ◽

High Electron ◽

High Electron Mobility ◽

X Ray ◽

Electron Mobility Transistors ◽

Channel Thickness ◽

Device Properties

ABSTRACTThe performance of InGaAs/GaAs pseudomorphic high electron mobility transistors is anticipated to improve with increased channel thickness due to reduced effects of quantum confinement. However, greater channel thicknesses increase the probability of forming misfit dislocations which have been reported to impair device properties. We characterized the composition and thickness of the active layer in Al0.25Ga0.75As / In0.21Ga0.79As structures with different channel thicknesses (75 Å - 300 Å) to within ± 0.005 and ± 8 Å using high resolution x-ray techniques. We determined, using Hall and rf measurements, that the device properties of these structures improved with increasing thickness up to about 185-205 Å; degraded properties were observed for thicker channel layers. Cathodoluminescence results indicate that the mosaic spread observed in x-ray triple axis rocking curves of these device structures is due to the presence of misfit dislocations. Thus, even though misfit dislocations are present, the device structure performs best with a channel thickness of ∼185 Å. These results demonstrate that one can fabricate functional devices in excess of critical thickness considerations, and that these x-ray techniques provide an effective means to evaluate structural properties prior to device processing.

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