scholarly journals SAFE OPERATING AREA OF 4H-SIC SCHOTTKY DIODES UNDER THE IMPACT OF HEAVY CHARGED PARTICLES

2019 ◽  
Vol 252 (1) ◽  
pp. 30-38
Author(s):  
P.S. Gromova ◽  
◽  
A.S. Tararaksin ◽  
A.S. Kolosova ◽  
D.V. Boychenko ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Charged Particles ◽  
Heavy Charged Particles ◽  
The Impact ◽  
Safe Operating

THE RESULTS OF THE TESTING OF COMPLEX CHIPS TO THE IMPACT OF HEAVY CHARGED PARTICLES

2017 ◽  
Vol 9 (4) ◽  
pp. 14-16
Author(s):  
Konstantin Zolnikov ◽  
Vera Meerson ◽  
A. Yankov ◽  
V. Kryukov
Keyword(s):  
Charged Particles ◽  
Heavy Charged Particles ◽  
The Impact

scholarly journals Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 55-62
Author(s):  
I. Yu. Lovshenko ◽  
V. R. Stempitsky ◽  
V. T. Shandarovich
Keyword(s):  
Charged Particle ◽  
Radiation Effects ◽  
Outer Space ◽  
Charged Particles ◽  
Drain Current ◽  
Heavy Charged Particle ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Heavy Charged Particles ◽  
The Impact

The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect. For digital integrated circuits manufactured using submicron CMOS processes, the greatest influence is exerted by radiation effects caused by exposure to a heavy charged particle. The use of special design tools in the development of dual-purpose microcircuits, with increased resistance to the impact of heavy charged particles, prevents single events from occurring. Thus, the use of modern software products for device and technological modeling in microelectronics when developing the element base of radiation-resistant microcircuits for space purposes will cut the time to develop new products and make it possible to modernize (improve performance) already existing device and circuitry solutions. The paper delivers the results of modeling the impacts of heavy charged particles with a magnitude of linear energy transfer equal to 1.81, 10.1, 18.8, 55.0 MeV·cm2/mg, corresponding to nitrogen ions 15N+4 with an energy E = 1,87 MeV; argon 40Ar+12 with an energy E = 372 MeV; ferrum 56Fe+15 with an energy E = 523 MeV; xenon 131Xe+35 with an energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure. The dependences of the maximum drain current IС on the motion trajectory of a heavy charged particle and the ambient temperature are shown.

ASSESSING THE ADEQUACY OF MODELING THE IMPACT OF HEAVY CHARGED PARTICLES ON A CHIP

2016 ◽  
Vol 8 (4) ◽  
pp. 10-12 ◽  
Author(s):  
Грошев ◽  
A. Groshev ◽  
Чубур ◽  
K. Chubur ◽  
Яньков ◽  
...  
Keyword(s):  
Charged Particles ◽  
Heavy Charged Particles ◽  
Comparison Of The Results ◽  
The Impact ◽  
Theoretical Results ◽  
Good Agreement

Considered a comparison of experimental and theoretical results is the number of failures at the chip under the influence of heavy charged particles. Comparison of the results showed good agreement.

Compound multiplicity in the collisions of 4.1 A GeV/c 22Ne nuclei with nuclear emulsion

2002 ◽  
Vol 80 (2) ◽  
pp. 109-117 ◽  
Author(s):  
Z Abou-Moussa
Keyword(s):  
Impact Parameter ◽  
Linear Dependence ◽  
Nuclear Emulsion ◽  
Mass Number ◽  
Multiplicity Distribution ◽  
Charged Particles ◽  
Heavy Charged Particles ◽  
Target Mass ◽  
Compound Multiplicity ◽  
The Impact

This work displays a study of the compound multiplicity characteristics of 4.1 A GeV/c 22Ne–emulsion interactions, where the number of shower and grey particles taken together is termed as compound multiplicity, Nc. The present data are compared with the corresponding ones obtained for other projectiles at nearly the same momentum per nucleon. It is observed that while the average compound multiplicity depends on the mass number of the projectile, Ap, the value of the ratio <Nc>/D(Nc) seems to be independent of Ap. The impact parameter is found to affect the shape of the compound multiplicity distribution. A positive linear dependence of the compound multiplicity on both the black and heavy charged particles is also noted. Finally, the results indicate that the value of <Nc> depends also on the target mass number. PACS No.: 25.70

Analysis of Forward Surge Performance of SiC Schottky Diodes

2018 ◽  
Vol 924 ◽  
pp. 621-624 ◽  
Author(s):  
Rahul Radhakrishnan ◽  
Nathanael Cueva ◽  
Tony Witt ◽  
Richard L. Woodin
Keyword(s):  
Silicon Carbide ◽  
Failure Analysis ◽  
Ohmic Contact ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Device Failure ◽  
Electrical Failure ◽  
The Impact ◽  
Surge Current

Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.

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