Fabrication and optoelectronic characterization of suspended In2O3 nanowire transistors

2021 ◽  
Vol 14 (1) ◽  
pp. 1-10
Author(s):  
JIANG Yi-yang ◽  
◽  
CHEN Yan ◽  
WANG Xu-dong ◽  
ZHAO Dong-yang ◽  
...  
Keyword(s):  
Nanowire Transistors

Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels

2006 ◽  
Vol 53 (10) ◽  
pp. 2471-2477 ◽  
Author(s):  
Horng-Chih Lin ◽  
Ming-Hsien Lee ◽  
Chun-Jung Su ◽  
Shih-Wen Shen
Keyword(s):  
Solid Phase ◽  
Nanowire Transistors ◽  
Fabrication And Characterization

Fabrication of Poly-Silicon Nano-Wire Transistors on Plastic Substrates

2007 ◽  
Vol 7 (11) ◽  
pp. 4150-4153
Author(s):  
ChangMin Park ◽  
SeHan Lee ◽  
MinSu Choi ◽  
MyungGil Kang ◽  
YoungChai Jung ◽  
...  
Keyword(s):  
Sacrificial Layer ◽  
Flexible Substrates ◽  
Si Substrate ◽  
Plastic Substrates ◽  
Si Nanowire ◽  
Nanowire Transistors ◽  
New Process ◽  
Curing Condition ◽  
Fabrication And Characterization

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.

scholarly journals High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

2014 ◽  
Vol 104 (4) ◽  
pp. 043106 ◽  
Author(s):  
A. C. Betz ◽  
S. Barraud ◽  
Q. Wilmart ◽  
B. Plaçais ◽  
X. Jehl ◽  
...  
Keyword(s):  
Charge Transport ◽  
High Frequency ◽  
Silicon On Insulator ◽  
Nanowire Transistors
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