Diagnostics of dust particles in plasma chemical vapor deposition process emission spectroscopy and Langmuir probe

2013 ◽  
Vol 25 (5) ◽  
pp. 1283-1287
Author(s):  
吴静 Wu Jing ◽  
姚列明 Yao Lieming ◽  
薛雷 Xue Lei
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Langmuir Probe ◽  
Emission Spectroscopy ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Dust Particles ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Optical emission spectroscopy during the bias-enhanced nucleation of diamond microcrystals by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.

ANN-Model for Plasma Chemical Vapor Deposition Process

2013 ◽  
Vol 699 ◽  
pp. 92-95
Author(s):  
Zhen Yu Li ◽  
Hong Sheng Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Ann Model ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Process Gas ◽  
Vapor Deposition Process

Plasma Chemical Vapor Deposition process is one of the main process to make optical fiber core-rod. In this process, gas flow, pressure, furnace temperature, reflective microwave power , resonator moving speed and deposition rate are dependant aspects. An artificial neural network model is set up to describe the relationship of variables in the process, and also verified by the experiment and production. Based on the ANN-model, the process recipe setting is illustrated in the paper.

Highly Oriented ZnO Nanorod Arrays by a Novel Plasma Chemical Vapor Deposition Process

2010 ◽  
Vol 10 (4) ◽  
pp. 2011-2018 ◽  
Author(s):  
Daniela Bekermann ◽  
Alberto Gasparotto ◽  
Davide Barreca ◽  
Laura Bovo ◽  
Anjana Devi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition
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