Copper layer thickness for 325 MHz superconducting cavity input couplers

2014 ◽  
Vol 26 (12) ◽  
pp. 125103
Author(s):  
陈旭 Chen Xu ◽  
谷魁祥 Gu Kuixiang ◽  
彭应华 Peng Yinghua ◽  
马强 Ma Qiang ◽  
黄彤明 Huang Tongming ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Copper Layer ◽  
Superconducting Cavity

scholarly journals Determination of the copper layer thickness in spin valves by grazing incidence X-ray fluorescence

1998 ◽  
Vol 34 (4) ◽  
pp. 831-833 ◽  
Author(s):  
T.P.A. Hase ◽  
K. Tanner ◽  
P. Ryan ◽  
C.H. Marrows ◽  
B.J. Hickey
Keyword(s):  
Layer Thickness ◽  
Grazing Incidence ◽  
Copper Layer ◽  
Spin Valves ◽  
X Ray

scholarly journals Resistance Change Mechanism of Electronic Component Mounting through Contact Pressure Using Elastic Adhesive

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 396 ◽  
Author(s):  
Takashi Sato ◽  
Tomoya Koshi ◽  
Eiji Iwase
Keyword(s):  
Contact Resistance ◽  
Layer Thickness ◽  
Contact Pressure ◽  
Low Cost ◽  
Contact Resistivity ◽  
Copper Layer ◽  
Electronic Components ◽  
Resistance Change ◽  
Change Mechanism ◽  
Contact Pressures

For mounting electronic components through contact pressure using elastic adhesives, a high contact resistance is an inevitable issue in achieving solderless wiring in a low-temperature and low-cost process. To decrease the contact resistance, we investigated the resistance change mechanism by measuring the contact resistance with various contact pressures and copper layer thicknesses. The contact resistivity decreased to 4.2 × 10−8 Ω·m2 as the contact pressure increased to 800 kPa and the copper layer thickness decreased to 5 µm. In addition, we measured the change in the total resistance with various copper layer thicknesses, including the contact and wiring resistance, and obtained the minimum combined resistance of 123 mΩ with a copper-layer thickness of 30 µm using our mounting method. In this measurement, a low contact resistance was obtained with a 5-µm-thick copper layer and a contact pressure of 200 kPa or more; however, there is a trade-off with respect to the copper layer thickness in obtaining the minimum combined resistance because of the increasing wiring resistance. Subsequently, based on these measurements, we developed a sandwich structure to decrease the contact resistance, and a contact resistivity of 8.0 × 10−8 Ω·m2 was obtained with the proposed structure.

scholarly journals Dependence of GMR on Copper Layer Thickness in Electrodeposited CoNiCu/Cu Multilayers

1998 ◽  
Vol 22 (S_1_ISFA_97) ◽  
pp. S1_224-226 ◽  
Author(s):  
S. KAINUMA ◽  
S. ISHIKURA ◽  
K. HISATAKE ◽  
T. WATANABE ◽  
N. FUKUMURO
Keyword(s):  
Layer Thickness ◽  
Copper Layer

scholarly journals Influence Analysis of Structural Parameters on the Performance of 120° Phase Belts Toroidal Winding Solid Rotor Induction Motor

Energies ◽  
2020 ◽  
Vol 13 (20) ◽  
pp. 5387
Author(s):  
Shaofeng Chen ◽  
Yaofei Han ◽  
Zhixun Ma ◽  
Guozhen Chen ◽  
Shuai Xu ◽  
...  
Keyword(s):  
Induction Motor ◽  
Layer Thickness ◽  
Power Factor ◽  
Structural Parameters ◽  
Torque Ripple ◽  
Copper Layer ◽  
Average Output ◽  
Influence Analysis ◽  
Output Torque ◽  
Slot Opening

120° phase belt toroidal winding solid rotor induction motor (120°PBTWSRIM) has advantages of simple structure, short end winding, and high overload capacity, thus it has good development prospects. To study the influence of different structural parameters on 120°PBTWSRIM performance, the 2D finite element model is established, and the electromagnetic characteristics are analyzed. The influence of six structure parameters on the average output torque, power factor, and torque ripple are analyzed, which are slot opening width, slot opening height, slot width, slot height, slot radius, and copper layer thickness. It is found that copper layer thickness has a significant effect on the performance of 120°PBTWSRIM. When the copper layer thickness is 0.5 mm, locked average output torque is increased to 2.784 Nm, locked power factor is increased by 64.6%, and locked torque ripple is reduced by 79.7%. Finally, a prototype of 120°PBTWSRIM is built and experimented, the correctness of performance influence analysis is verified by the comparison of results of the simulation and the experiment.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

The stabilization of B.C.C. Cu in Cu/Nb nanolayered composites

1996 ◽  
Vol 54 ◽  
pp. 228-229
Author(s):  
H. Kung ◽  
A.J. Griffin ◽  
Y.C. Lu ◽  
K.E. Sickafus ◽  
T.E. Mitchell ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Layer Thickness ◽  
Volume Fraction ◽  
Ion Beam ◽  
High Strength ◽  
Cross Sectional ◽  
Metastable Structure ◽  
High Resolution Tem ◽  
Potential Improvement ◽  
Two Phases

Materials with compositionally modulated structures have gained much attention recently due to potential improvement in electrical, magnetic and mechanical properties. Specifically, Cu-Nb laminate systems have been extensively studied mainly due to the combination of high strength, and superior thermal and electrical conductivity that can be obtained and optimized for the different applications. The effect of layer thickness on the hardness, residual stress and electrical resistivity has been investigated. In general, increases in hardness and electrical resistivity have been observed with decreasing layer thickness. In addition, reduction in structural scale has caused the formation of a metastable structure which exhibits uniquely different properties. In this study, we report the formation of b.c.c. Cu in highly textured Cu/Nb nanolayers. A series of Cu/Nb nanolayered films, with alternating Cu and Nb layers, were prepared by dc magnetron sputtering onto Si {100} wafers. The nominal total thickness of each layered film was 1 μm. The layer thickness was varied between 1 nm and 500 nm with the volume fraction of the two phases kept constant at 50%. The deposition rates and film densities were determined through a combination of profilometry and ion beam analysis techniques. Cross-sectional transmission electron microscopy (XTEM) was used to examine the structure, phase and grain size distribution of the as-sputtered films. A JEOL 3000F high resolution TEM was used to characterize the microstructure.

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