Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

10.3791/62864 ◽  
2021 ◽  
Author(s):  
Marek Novák ◽  
Jozef Rosina ◽  
Robert Gürlich ◽  
Ivana Cibulková ◽  
Jan Hajer
Keyword(s):  
Schottky Diode ◽  
Ph Monitoring ◽  
Zero Bias ◽  
Implantable Sensor

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

MILLIMETER AND SUB-MILLIMETER WAVE PERFORMANCE OF AN ERAS:INALGAAS SCHOTTKY DIODE COUPLED TO A SINGLE-TURN SQUARE SPIRAL

2007 ◽  
Vol 17 (02) ◽  
pp. 383-394 ◽  
Author(s):  
E. R. Brown ◽  
A. C. Young ◽  
J. E. Bjarnason ◽  
J. D. Zimmerman ◽  
A. C. Gossard ◽  
...  
Keyword(s):  
Plane Wave ◽  
Schottky Diode ◽  
Water Source ◽  
Hot Water ◽  
Equivalent Temperature ◽  
Spiral Antenna ◽  
Zero Bias ◽  
Single Turn ◽  
Noise Equivalent Temperature Difference ◽  
Coherent Source

We report the first experimental results for noise-equivalent power (NEP) and noise-equivalent temperature difference (NETD) of single-crystal ErAs:InAlGaAs , zero-bias rectifier diodes coupled to free space quasi-optically in the THz region. At a frequency of 639 GHz, an optical NEP of 4.0×10−12 W / Hz 1/2 is measured with the rectifier coupled to a quasi-plane-wave coherent source through a single-turn square spiral antenna. With a broadband thermal (hot water) source, an NETD of 120 mK is measured from the same device. Antenna radiation patterns at 100 GHz and 639 GHz are also presented.

scholarly journals Porous Ag/TiO2-Schottky-diode based plasmonic hot-electron photodetector with high detectivity and fast response

Nanophotonics ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 1247-1254 ◽  
Author(s):  
Xu Dong Gao ◽  
Guang Tao Fei ◽  
Shao Hui Xu ◽  
Bin Nian Zhong ◽  
Hao Miao Ouyang ◽  
...  
Keyword(s):  
Energy Distribution ◽  
Density Of States ◽  
Schottky Diode ◽  
Response Speed ◽  
Fast Response ◽  
Hot Electrons ◽  
Light Illumination ◽  
Hot Electron ◽  
Zero Bias ◽  
Chemisorbed Oxygen

AbstractDue to the advantages of narrow energy distribution of plasmonic hot-electrons in Ag and the high density of states in the TiO2 conduction band, an Ag/TiO2 composite is considered to be an ideal combination to construct a plasmonic hot-electron photodetector with high detectivity and a high response speed. In this work, we fabricate a porous Ag/TiO2-Schottky-diode based plasmonic hot-electron photodetector. This detector shows a high detectivity of 9.8 × 1010 cmHz1/2/W and a fast response speed, with a rise and fall time of 112 μs and 24 μs, respectively, under 450 nm light illumination at zero bias voltage. In addition, the height of the Ag/TiO2 Schottky barrier can be decreased by removing the chemisorbed oxygen from the surface of TiO2 with ultraviolet light illumination, and as a result, the responsivity of the Ag/TiO2 plasmonic hot-electron photodetector at 450 nm can increase from 3.4 mA/W to 7.4 mA/W.

A 570-630 GHz FREQUENCY DOMAIN TERAHERTZ SPECTROSCOPY SYSTEM BASED ON A BROADBAND QUASI-OPTICAL ZERO BIAS SCHOTTKY DIODE DETECTOR

2011 ◽  
Vol 20 (03) ◽  
pp. 629-638 ◽  
Author(s):  
LEI LIU ◽  
JEFFREY L. HESLER ◽  
ROBERT M. WEIKLE ◽  
TAO WANG ◽  
PATRICK FAY ◽  
...  
Keyword(s):  
Frequency Domain ◽  
Schottky Diode ◽  
Terahertz Spectroscopy ◽  
Solid Phase ◽  
Thz Spectroscopy ◽  
Thz Radiation ◽  
Metal Mesh ◽  
Zero Bias ◽  
Diode Detector ◽  
Spectroscopy System

We report a room temperature 570-630 GHz frequency domain terahertz (THz) spectroscopy system developed on the basis of a broadband quasi-optical zero bias Schottky diode detector. The detector is designed to cover the frequency range of 100 GHz to nearly 900 GHz. A responsivity of 300-1000 V/W has been measured, and the noise equivalent power (NEP) is estimated to be 5-20 pW/√Hz based on the measurements of similar detectors. For a prototype demonstration, the frequency domain THz spectroscopy system was operated within the region of 570-630 GHz using a VDI (Virginia Diodes, Inc.) frequency extension module (FEM) to provide the THz radiation. Mylar thin films with different thicknesses and THz metal mesh filters have been measured using this system, demonstrating a measurement accuracy of ~2%. This system has been applied to measure biomolecules in liquid-phase, and nano-material samples in solid-phase. Initial results and discussion are presented.

A Broadband Quasi-Optical Terahertz Detector Utilizing a Zero Bias Schottky Diode

2010 ◽  
Vol 20 (9) ◽  
pp. 504-506 ◽  
Author(s):  
Lei Liu ◽  
Jeffrey L. Hesler ◽  
Haiyong Xu ◽  
Arthur W. Lichtenberger ◽  
Robert M. Weikle
Keyword(s):  
Schottky Diode ◽  
Zero Bias ◽  
Terahertz Detector

scholarly journals Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1450
Author(s):  
Jéssica Gutiérrez ◽  
Kaoutar Zeljami ◽  
Juan Pablo Pascual ◽  
Tomás Fernández ◽  
Antonio Tazón
Keyword(s):  
Schottky Diode ◽  
State Of The Art ◽  
Low Cost ◽  
Schottky Diodes ◽  
Zero Bias ◽  
Simulation Tools ◽  
W Band ◽  
Intensive Use ◽  
Em Simulation ◽  
3D Em

This paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed.

High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode

2018 ◽  
Vol 6 (35) ◽  
pp. 9545-9551 ◽  
Author(s):  
Dharmaraj Periyanagounder ◽  
Paulraj Gnanasekar ◽  
Purushothaman Varadhan ◽  
Jr-Hau He ◽  
Jeganathan Kulandaivel
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
High Performance ◽  
Photon Absorption ◽  
Schottky Junction ◽  
Zero Bias ◽  
Junction Diode ◽  
Vdw Heterostructure ◽  
Self Powered ◽  
532 Nm

In this work, we design and demonstrate a graphene/silicon (Gr/Si) van der Walls (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and performs well as a self-powered detector responding to 532 nm at zero bias.

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