Fabrication of Silicon-Oxide Nanostructures on Low-Energy Ar-Ion-Bombarded Silicon via Atomic Force Microscope Nanolithography

2008 ◽  
Vol 52 (9(3)) ◽  
pp. 930-933 ◽  
Author(s):  
Sung-Kyoung Kim ◽  
Hyunsook Kim ◽  
Haiwon Lee
Keyword(s):  
Atomic Force Microscope ◽  
Silicon Oxide ◽  
Low Energy ◽  
Atomic Force ◽  
Oxide Nanostructures

scholarly journals Direct-write polymer nanolithography in ultra-high vacuum

2012 ◽  
Vol 3 ◽  
pp. 52-56 ◽  
Author(s):  
Woo-Kyung Lee ◽  
Minchul Yang ◽  
Arnaldo R Laracuente ◽  
William P King ◽  
Lloyd J Whitman ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Silicon Oxide ◽  
High Vacuum ◽  
Polymer Chains ◽  
Ultra High Vacuum ◽  
Direct Write ◽  
Polymer Nanostructures ◽  
Atomic Force

Polymer nanostructures were directly written onto substrates in ultra-high vacuum. The polymer ink was coated onto atomic force microscope (AFM) probes that could be heated to control the ink viscosity. Then, the ink-coated probes were placed into an ultra-high vacuum (UHV) AFM and used to write polymer nanostructures on surfaces, including surfaces cleaned in UHV. Controlling the writing speed of the tip enabled the control over the number of monolayers of the polymer ink deposited on the surface from a single to tens of monolayers, with higher writing speeds generating thinner polymer nanostructures. Deposition onto silicon oxide-terminated substrates led to polymer chains standing upright on the surface, whereas deposition onto vacuum reconstructed silicon yielded polymer chains aligned along the surface.

Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 379-382 ◽  
Author(s):  
Yoshinobu Fukano ◽  
Takayuki Uchihashi ◽  
Takahiro Okusako ◽  
Ayumi Chayahara ◽  
Yasuhiro Sugawara ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Time Evolution ◽  
Silicon Oxide ◽  
Oxide Surface ◽  
Atomic Force

Effect of Solvent and Dopant on Poly(3,4-ethylenedioxythiophene) Thin Films by Atomic Force Microscope Lithography

2008 ◽  
Vol 8 (9) ◽  
pp. 4757-4760 ◽  
Author(s):  
Yong-il Kim ◽  
Hyunsook Kim ◽  
Haiwon Lee
Keyword(s):  
Thin Films ◽  
Conducting Polymers ◽  
Atomic Force Microscope ◽  
Organic Solvents ◽  
Silicon Surface ◽  
Silicon Oxide ◽  
Organic Thin Films ◽  
Effect Of Solvent ◽  
Aspect Ratios ◽  
Atomic Force

AMF anodization lithography was performed on organic thin films with conducting polymers which is poly(3,4-ethylenedioxythiophene). The conductivity of PEDOT thin films was changed by different dopants and organic solvents. Two different dopants are poly(4-styrenesulfonate) and di(2-ethylhexyl)-sulfosuccinate. Also, DMF and IPA were used to prepare the PEDOT thin films doped with PSS and DEHS on silicon surface. The conductivities of these PEDOT variants were compared by obtaining their I–V curves between tip and thin films using AFM. Silicon oxide nanopatterns with higher aspect ratios can be obtained from the films with higher conductivity.

Growth behavior of oxide nanostructures by electrical and thermal conductivities of substrate in atomic force microscope nano-oxidation

2007 ◽  
Vol 101 (4) ◽  
pp. 044905 ◽  
Author(s):  
Sunwoo Lee ◽  
Eol Pyo ◽  
Jeong Oh Kim ◽  
Jaegeun Noh ◽  
Haiwon Lee ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Growth Behavior ◽  
Atomic Force ◽  
Oxide Nanostructures ◽  
Thermal Conductivities

Atomic force microscope study of etched tracks of low-energy heavy ions in mica

1993 ◽  
Vol 297 (3) ◽  
pp. 359-370 ◽  
Author(s):  
R.V. Coleman ◽  
Q. Xue ◽  
Y. Gong ◽  
P.B. Price
Keyword(s):  
Atomic Force Microscope ◽  
Microscope Study ◽  
Heavy Ions ◽  
Low Energy ◽  
Atomic Force

Characterization of Silicon Oxide-Based Materials in an Atomic Force Microscope

Tribology ◽  
2006 ◽  
Author(s):  
Marissa J. Post ◽  
J. Liu ◽  
J. Du ◽  
S. R. Schmid ◽  
T. Ovaert ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Direct Calculation ◽  
Test Methods ◽  
Flow Strength ◽  
Carbon Doped ◽  
Test Methodology ◽  
Atomic Force ◽  
Forms Of Carbon

Silicon oxides are widespread in microelectronics and microelectromechanical systems (MEMS) applications. One form of this material that has been suggested as a dielectric in MEMS applications is a carbon-doped form of silicon oxide that can be produced in thin coatings. However, the mechanical properties and wear resistance of these coatings is unknown, and coatings of interest are difficult to characterize because they are very thin. A test methodology has been previously described using extremely sharp diamond tips on a stainless steel cantilever in an atomic force microscope, and this method allows direct calculation of an effective material flow strength at penetration depths as small as twenty nanometers. A number of forms of carbon-doped and undoped silicon dioxide have been evaluated using this methodology. Size effects on material properties are evaluated, and correlations between test methods are presented.

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