Design of NAND Flash Memory Device by the Fringing Field from a Control Gate

2008 ◽  
Vol 53 (6) ◽  
pp. 3411-3415 ◽  
Author(s):  
Young Min Kim ◽  
Ki-Heung Park ◽  
Kyoung-Rok Han ◽  
Byung-Kil Choi ◽  
Sang-Goo Jung ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Fringing Field

A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device

2011 ◽  
Vol 50 (10) ◽  
pp. 100204 ◽  
Author(s):  
Myounggon Kang ◽  
Wookghee Hahn ◽  
Il Han Park ◽  
Youngsun Song ◽  
Hocheol Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Compact Model ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Channel Coupling

A novel erase method for scaled NAND flash memory device

2016 ◽  
Author(s):  
Chan-Ching Lin ◽  
Kuei-Shu Chang-Liao ◽  
Tzung-Bin Huang ◽  
Hann-Ping Hwang
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Nand Flash ◽  
Nand Flash Memory

A new erase method for scaled NAND flash memory device

2017 ◽  
Vol 72 ◽  
pp. 34-38
Author(s):  
Chan-Ching Lin ◽  
Kuei-Shu Chang-Liao ◽  
Tzung-Bin Huang ◽  
Cheng-Jung Yu ◽  
Hsueh-Chao Ko
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Nand Flash ◽  
Nand Flash Memory

A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device

2011 ◽  
Vol 50 (10R) ◽  
pp. 100204 ◽  
Author(s):  
Myounggon Kang ◽  
Wookghee Hahn ◽  
Il Han Park ◽  
Youngsun Song ◽  
Hocheol Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Compact Model ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Channel Coupling

A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage Node

2011 ◽  
Vol 58 (2) ◽  
pp. 288-295 ◽  
Author(s):  
Seongjae Cho ◽  
Won Bo Shim ◽  
Yoon Kim ◽  
Jang-Gn Yun ◽  
Jong Duk Lee ◽  
...  
Keyword(s):  
Band Gap ◽  
Flash Memory ◽  
Memory Device ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Charge Trap ◽  
Storage Node ◽  
A Charge

scholarly journals Integer Codes Correcting Asymmetric Errors in Nand Flash Memory

Mathematics ◽  
2021 ◽  
Vol 9 (11) ◽  
pp. 1269
Author(s):  
Hristo Kostadinov ◽  
Nikolai Manev
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Cyclotomic Cosets ◽  
Solid State Disks ◽  
Asymmetric Errors ◽  
Device Use ◽  
Integer Codes

Memory devices based on floating-gate transistor have recently become dominant technology for non-volatile storage devices like USB flash drives, memory cards, solid-state disks, etc. In contrast to many communication channels, the errors observed in flash memory device use are not random but of special, mainly asymmetric, type. Integer codes which have proved their efficiency in many cases with asymmetric errors can be applied successfully to flash memory devices, too. This paper presents a new construction and integer codes over a ring of integers modulo A=2n+1 capable of correcting single errors of type (1,2),(±1,±2), or (1,2,3) that are typical for flash memory devices. The construction is based on the use of cyclotomic cosets of 2 modulo A. The parity-check matrices of the codes are listed for n≤10.

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