Independent Gate Operation of NAND Flash Memory Device with Improved Retention Characteristics

2019 ◽  
pp. 567-570
Author(s):  
Pooja Bohara ◽  
S. K. Vishvakarma
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Gate Operation ◽  
Retention Characteristics ◽  
Independent Gate

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge

A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device

2011 ◽  
Vol 50 (10) ◽  
pp. 100204 ◽  
Author(s):  
Myounggon Kang ◽  
Wookghee Hahn ◽  
Il Han Park ◽  
Youngsun Song ◽  
Hocheol Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Compact Model ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Channel Coupling

A novel erase method for scaled NAND flash memory device

2016 ◽  
Author(s):  
Chan-Ching Lin ◽  
Kuei-Shu Chang-Liao ◽  
Tzung-Bin Huang ◽  
Hann-Ping Hwang
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Nand Flash ◽  
Nand Flash Memory

Correction to “Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory” [Sep 13 1139-1141]

2013 ◽  
Vol 34 (10) ◽  
pp. 1345-1345
Author(s):  
Duckseoung Kang ◽  
Kyunghwan Lee ◽  
Seongjun Seo ◽  
Shinhyung Kim ◽  
Ji-Seok Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Retention Characteristics

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

2014 ◽  
Vol 35 (1) ◽  
pp. 51-53 ◽  
Author(s):  
Kyunghwan Lee ◽  
Myounggon Kang ◽  
Seongjun Seo ◽  
Duckseoung Kang ◽  
Dong Hua Li ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Retention Characteristics ◽  
20 Nm

Design of NAND Flash Memory Device by the Fringing Field from a Control Gate

2008 ◽  
Vol 53 (6) ◽  
pp. 3411-3415 ◽  
Author(s):  
Young Min Kim ◽  
Ki-Heung Park ◽  
Kyoung-Rok Han ◽  
Byung-Kil Choi ◽  
Sang-Goo Jung ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Fringing Field
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