Effects of a SiO2 buffer layer on the flatband voltage shift of La2O3 gate dielectric grown by using remote plasma atomic layer deposition

2012 ◽  
Vol 61 (7) ◽  
pp. 1051-1055
Author(s):  
Hyerin Lee ◽  
Hyungchul Kim ◽  
Jaesang Lee ◽  
Hyeongtag Jeon
Keyword(s):  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Voltage Shift ◽  
Layer Deposition ◽  
Flatband Voltage

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

Effect of Buffer Layer for HfO[sub 2] Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition

2007 ◽  
Vol 154 (2) ◽  
pp. H97 ◽  
Author(s):  
Seokhoon Kim ◽  
Sanghyun Woo ◽  
Hyungseok Hong ◽  
Hyungchul Kim ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Layer Deposition

Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

2017 ◽  
Vol 122 (24) ◽  
pp. 245302 ◽  
Author(s):  
Yunlong Li ◽  
Samuel Suhard ◽  
Stefaan Van Huylenbroeck ◽  
Johan Meersschaut ◽  
Els Van Besien ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Through Silicon Via ◽  
Voltage Shift ◽  
Interface Charge ◽  
Layer Deposition ◽  
Flatband Voltage
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