scholarly journals Quantum paraelectricity and induced ferroelectricity by germanium doping of (PbySn1–y)2P2S(Se)6 single crystals

2020 ◽  
Vol 60 (2) ◽  
Author(s):  
Ilona Zamaraitė ◽  
Andrius Džiaugys ◽  
Yulian Vysochanskii ◽  
Jūras Banys
Keyword(s):  
Dielectric Permittivity ◽  
Single Crystals ◽  
Low Temperatures ◽  
Dielectric Constants ◽  
Dielectric Study ◽  
Quantum Paraelectric ◽  
Temperature Dependences ◽  
Paraelectric State

In this paper we report a dielectric study on four single crystals Pb2P2S6, (Pb0.98Ge0.02)2P2S6, (Pb0.7Sn0.3)2P2S6 + 5% Ge and (Pb0.7Sn0.3)2P2Se6 + 5% Ge down to 20 K. A new quantum paraelectric state was reported in the Ge-doped samples at low temperatures. In all of these materials the non-classical T2 temperature dependences of inverse dielectric permittivity were observed. The dielectric constants of Pb2P2S6-based single crystals were measured between 20 and 300 K. The temperature dependences of dielectric permittivity were analysed on the basis of Barrett’s model as a signature of quantum paraelectricity.

The Determination of the Magnetoelectric Coupling Coefficient in Ferroelectric–Ferromagnetic Composite Based on PZT–Ferrite

2013 ◽  
Vol 58 (4) ◽  
pp. 1401-1403 ◽  
Author(s):  
J.A. Bartkowska ◽  
R. Zachariasz ◽  
D. Bochenek ◽  
J. Ilczuk
Keyword(s):  
Dielectric Permittivity ◽  
Coupling Coefficient ◽  
Mean Field ◽  
Field Approximation ◽  
Theoretical Description ◽  
Magnetoelectric Coupling ◽  
Mean Field Approximation ◽  
Dielectric Measurements ◽  
Temperature Dependences ◽  
Multiferroic Composite

Abstract In the present work, the magnetoelectric coupling coefficient, from the temperature dependences of the dielectric permittivity for the multiferroic composite was determined. The research material was ferroelectric-ferromagnetic composite on the based PZT and ferrite. We investigated the temperature dependences of the dielectric permittivity (") for the different frequency of measurement’s field. From the dielectric measurements we determined the temperature of phase transition from ferroelectric to paraelectric phase. For the theoretical description of the temperature dependence of the dielectric constant, the Hamiltonian of Alcantara, Gehring and Janssen was used. To investigate the dielectric properties of the multiferroic composite this Hamiltonian was expressed under the mean-field approximation. Based on dielectric measurements and theoretical considerations, the values of the magnetoelectric coupling coefficient were specified.

Anthracene fluorescence at low temperatures. I. Purified single crystals

1972 ◽  
Vol 25 (7) ◽  
pp. 1411 ◽  
Author(s):  
LE Lyons ◽  
LJ Warren
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Fluorescence Spectrum ◽  
Low Temperatures ◽  
Free Exciton ◽  
Deformation Bands ◽  
Exciton Emission ◽  
Polarized Emission ◽  
Impurity Bands ◽  
Phonon Structure

The low-temperature fluorescence spectrum of purified vapour-grown anthracene single crystals is presented and the free-exciton emission distinguished from a number of defect or impurity bands present even in the purest crystals. In assigning the observed bands the symmetry of the active vibrations and the origin of background fluorescence and deformation bands are discussed. The phonon structure in the region of the fluorescence origin was found to be almost completely b-polarized. Emission of electronic origin (25103 cm-1) was too weak to be observed. Polarization ratios of the principal vibronio bands at 5.6 K are given.

scholarly journals A note on some further determinations of the dielectric constants of organic bodies and electrolytes at very low temperatures

1898 ◽  
Vol 62 (379-387) ◽  
pp. 250-266 ◽  
Keyword(s):  
Dielectric Constant ◽  
Low Temperatures ◽  
Tuning Fork ◽  
Dielectric Constants ◽  
The Past ◽  
Method Of Measurement ◽  
The Given ◽  
Past Summer

In several previous communications we have described the investigations made by us on the dielectric constants of various frozen organic bodies and electrolytes at very low temperatures. In these researches we employed a method for the measurement of the dielectric constant which consisted in charging and discharging a condenser, having the given body as dielectric, through a galvanometer 120 times in a second by means of a tuning-fork interrupter. During the past summer we have repeated some of these determinations and used a different method of measurement and a rather higher frequency. In the experiments here described we have adopted Nernst’s method for the measurement of dielectric constants, using for this purpose the apparatus as arranged by Dr. Nernst which belongs to the Davy-Faraday Laboratory.

Effects of ternary additions on the deformation behavior of single crystals of MoSi2

2000 ◽  
Vol 646 ◽  
Author(s):  
Haruyuki Inui ◽  
Koji Ishikawa ◽  
Masaharu Yamaguchi
Keyword(s):  
Yield Strength ◽  
Strain Rate ◽  
Single Crystals ◽  
Creep Strain ◽  
High Temperatures ◽  
Low Temperatures ◽  
Deformation Behavior ◽  
Creep Strain Rate ◽  
Compression Creep ◽  
Ternary Additions

ABSTRACTEffects of ternary additions on the deformation behavior of single crystals of MoSi2 with the hard [001] and soft [0 15 1] orientations have been investigated in compression and compression creep. The alloying elements studied include V, Cr, Nb and Al that form a C40 disilicide with Si and W and Re that form a C11b disilicide with Si. The addition of Al is found to decrease the yield strength of MoSi2 at all temperatures while the additions of V, Cr and Nb are found to decrease the yield strength at low temperatures and to increase the yield strength at high temperatures. In contrast, the additions of W and Re are found to increase the yield strength at all temperatures. The creep strain rate for the [001] orientation is significantly lower than that for the [0 15 1] orientation. The creep strain rate for both orientations is significantly improved by alloying with ternary elements such as Re and Nb.

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