Research on the Influence of Dust and Ambient Temperature on the Power of Photovoltaic Cells Based on the Regression Method

2021 ◽  
Vol 10 (2) ◽  
pp. 24-47
Author(s):  
Sumit Sharma ◽  
Ashish Nayyar ◽  
Kamal Kishore Khatri
Keyword(s):  
Ambient Temperature ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Capacity Utilization ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Performance Ratio ◽  
Utilization Factor ◽  
Current Maximum ◽  
Mlr Model

Solar energy has huge potential and offers a solution to fulfill the demand for energy and reduce fossil fuel emissions. An effort had been made for assessing the effects of dust accumulation and ambient temperature on module conversion efficiency of 62 KWp grid connected rooftop solar plant. The performance parameters including open-circuit voltage, maximum voltage, short-circuit current, maximum current, etc. were collected and permitting for usual dust addition. These statistics were used for the estimation of the performance ratio (PR), capacity utilization factor (CUF), and power conversion efficiency. This work assesses the decrease in conversion efficiency of cell as a function of dust addition and ambient temperature. A multivariate linear regressions (MLR) model can forecast conversion efficiency closely, with R2 values close to 91%. It was employed in computing decrease in efficiency due to dust addition only. Result shows that the normal efficiency drops due to dust are 0.872%/day, energy harms are 9.935 kWh/m2 and Rs. 192.72 or 2.5 dollar per day by the MLR model.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

scholarly journals Donor-Acceptor Polymer Based on Planar Structure of Alkylidene-Fluorene Derivative: Correlation of Power Conversion Efficiency among Polymer and Various Acceptor Units

Polymers ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2859
Author(s):  
Eui Jin Lee ◽  
Ho Jun Song
Keyword(s):  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Power Conversion ◽  
Average Molecular Weight ◽  
Coupling Reaction ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Planar Structure ◽  
Quinoxaline Derivatives

This study synthesized a novel polymer, poly(alkylidene fluorene-alt-diphenylquinoxaline) (PAFDQ), based on a planar alkylidene-fluorene and a highly soluble quinoxaline derivative through the Suzuki coupling reaction. We designed a novel molecular structure based on alkylidene fluorene and quinoxaline derivatives due to compact packing property by the planar structure of alkyidene fluorene and efficient intra-molecular charge transfer by quinoxaline derivatives. The polymer was largely dissolved in organic solvents, with a number average molecular weight and polydispersity index of 13.2 kg/mol and 2.74, respectively. PAFDQ showed higher thermal stability compared with the general fluorene structure owing to its rigid alkylidene-fluorene structure. The highest occupied and lowest unoccupied molecular orbital levels of PAFDQ were −5.37 eV and −3.42 eV, respectively. According to X-ray diffraction measurements, PAFDQ exhibited the formation of an ordered lamellar structure and conventional edge-on π-stacking. The device based on PAFDQ/Y6-BO-4Cl showed the best performance in terms of short circuit current (9.86 mA/cm2), open-circuit voltage (0.76 V), fill factor (44.23%), and power conversion efficiency (3.32%). Moreover, in the PAFDQ/Y6-BO-4Cl-based film, the phase separation of donor-rich and acceptor-rich phases, and the connected dark domains, was observed.

Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

2018 ◽  
Vol 32 (02) ◽  
pp. 1850014 ◽  
Author(s):  
G. S. Sahoo ◽  
G. P. Mishra
Keyword(s):  
Solar Cell ◽  
Quantum Efficiency ◽  
Conversion Efficiency ◽  
Internal Quantum Efficiency ◽  
Spectral Response ◽  
Short Circuit ◽  
Cost Effective ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III–V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (J[Formula: see text]), open-circuit voltage (V[Formula: see text]), fill factor (FF) and conversion efficiency ([Formula: see text]) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

PHOTOELECTRICAL PROPERTIES OF p-TYPE AND n-TYPE ELECTRICAL CONDUCTIVITY AMORPHOUS CARBON THIN FILMS FOR APPLICATION IN ECONOMICAL CARBON-BASED SOLAR CELLS

2005 ◽  
Vol 12 (03) ◽  
pp. 343-350 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Energy Conversion ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Short Circuit ◽  
Wavelength Region ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Open Circuit ◽  
Photon Absorption ◽  
P Type

The successful deposition of boron ( B )-doped p-type ( p-C:B ) and phosphorous ( P )-doped n-type ( n-C:P ) carbon ( C ) films, and fabrication of p-C:B on silicon ( Si ) substrate ( p-C:B/n-Si ) and n-C:P/p-Si cells by the technique of pulsed laser deposition (PLD) using graphite target is reported. The cells' performances are represented in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage (V oc ) and short circuit current density (J sc ) for p-C:B/n-Si are observed to vary from 230–250 mV and 1.5–2.2 mA/cm2, respectively, and to vary from 215–265 mV and 7.5–10.5 mA/cm2, respectively, for n-C:P/p-Si cells. The p-C:B/n-Si cell fabricated using the target with the amount of B by 3 Bwt% shows highest energy conversion efficiency, η = 0.20%, and fill factor, FF = 45%, while, the n-C:P/p-Si cell with the amount of P by 7 Pwt% shows highest energy conversion efficiency, η = 1.14%, and fill factor, FF = 41%. The quantum efficiencies (QE) of the p-C:B/n-Si and n-C:P/p-Si cells are observed to improve with Bwt% and Pwt%, respectively. The contributions of QE are suggested to be due to photon absorption by carbon layer in the lower wavelength region (below 750 nm) and Si substrates in the higher wavelength region. The dependence of B and P content on the electrical and optical properties of the deposited films, and the photovoltaic characteristics of the respective p-C:B/n-Si and n-C:P/p-Si heterojunction photovoltaic cells, are discussed.

CHARACTERISTICS OF PHOSPHORUS-DOPED AMORPHOUS CARBON FILMS GROWN BY R. F. PLASMA-ENHANCED CVD WITH A NOVEL PHOSPHORUS SOLID TARGET

2005 ◽  
Vol 12 (01) ◽  
pp. 19-25 ◽  
Author(s):  
M. RUSOP ◽  
M. ADACHI ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Amorphous Carbon ◽  
Current Density ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Phosphorus Doped

Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma-enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm 2, 25°C). The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 236 V and 7.34, mAcm 2 respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

scholarly journals Degradation effects of the output electrical characteristics of Si solar cells as a result of ionizing radiation under low light conditions

2015 ◽  
Vol 30 (3) ◽  
pp. 210-213 ◽  
Author(s):  
Nebojsa Stojanovic ◽  
Biljana Simic ◽  
Koviljka Stankovic ◽  
Djordje Lazarevic
Keyword(s):  
Solar Cells ◽  
Gamma Radiation ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Low Light ◽  
Crystalline Silicon Solar Cells ◽  
Current Maximum ◽  
Power Point

This paper presents results of radiation resistance of different types of commercially available single- and poly-crystalline silicon solar cells. Sample cells were subjected to gamma radiation from gamma radiation source 60Co. Characteristic parameters of solar cells were extracted from obtained I-V curves: open circuit voltage, short circuit current, maximum power point voltage and current, efficiency, fill factor, and series resistance. Obtained results show the level of parameters' degradation with purpose of increasing solar cells applications in radiation environments.

scholarly journals Damp-Heat Induced Performance Degradation for InGaP/GaAs/Ge Triple-Junction Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hwen-Fen Hong ◽  
Tsung-Shiew Huang ◽  
Wu-Yih Uen ◽  
Yen-Yeh Chen
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Triple Junction ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Open Circuit

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.

Fabrication of the Large-Area Integrated a-Si Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
S. Yamazaki ◽  
M. Abe ◽  
S. Nagayama ◽  
K. Shibata ◽  
M. Susukida ◽  
...  
Keyword(s):  
Solar Cells ◽  
Standard Deviation ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Process Equipment ◽  
Large Area ◽  
Si Solar Cells

ABSTRACTPIN-structure small-area solar cells using a-Si have been frequently reported on, but only a few reports are available on the study of solar cells using a large-area (10-cm square) substrate, all with a resultant conversion efficiency of above 9.0 %[1,2]. Our study has been concentrated on solar cells using a batch of ten 10-cm square substrates with an average conversion efficiency of 9.5 % or more.As a result, without an anti-reflection coating on the surface of the glass substrate, the following values have been obtained: average conversion efficiency (EFF)=9.63 % (standard deviation of 0.195 %) -Open-circuit voltage (Voc)=12.668 V (standard deviation of 0.215 V) -Short-circuit current (Isc)=78.467 mA (standard deviation of 1.619 mA) -Fill factor (FF)=0.6672 (standard deviation of 0.009)The process, equipment and methods for measurements through which these results were obtained are described below.

scholarly journals Enhancement of Power Efficiency and Stability of P3HT-Based Organic Solar Cells under Elevated Operating-Temperatures by Using a Nanocomposite Photoactive Layer

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Tran Thi Thao ◽  
Tran Quang Trung ◽  
Vo-Van Truong ◽  
Nguyen Nang Dinh
Keyword(s):  
Conversion Efficiency ◽  
Organic Solar Cells ◽  
Power Efficiency ◽  
Elevated Temperatures ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Open Circuit ◽  
Photoactive Layer ◽  
Temperature Range

With the aim to find out an enhanced operating-temperature range for photovoltaic device parameters, two types of the photoactive layer were prepared: poly(3-hexylthiophene) (P3HT) and P3HT+nc-TiO2(PTC) thin films. The enhancement obtained for the photoelectrical conversion efficiency of the composite based OSCs is attributed to the presence of nanoheterojunctions of TiO2/P3HT. For the temperature range of 30–70°C, the decrease of the open-circuit potential was compensated by an increase of the fill factor; and the increase in the short-circuit current resulted in an overall increase of the energy conversion efficiency. At elevated temperatures of 60–80°C the efficiency of the P3HT- and PTC-based cells reached a maximum value of 1.6% and 2.1%, respectively. Over this temperature range the efficiency of P3HT-based OSC decreased strongly to zero, whereas for the PTC cells it maintained a value as large as 1.2% at the temperature range of 110–140°C. The improved thermal stability of the composite-based device was attributed to the lowered thermal expansion coefficient of the nanocomposite photoactive layer.

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