A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process

2007 ◽  
pp. 57-60
Author(s):  
James D. Oliver ◽  
Brian H. Ponczak
Keyword(s):  
Epitaxial Growth ◽  
Growth Process ◽  
Designed Experiment

A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process

2007 ◽  
Vol 556-557 ◽  
pp. 57-60
Author(s):  
James D. Oliver ◽  
Brian H. Ponczak
Keyword(s):  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Layer Thickness ◽  
Process Parameters ◽  
Growth Process ◽  
Epitaxial Layers ◽  
Designed Experiments ◽  
Planetary Rotation ◽  
Designed Experiment ◽  
Resultant Effect

A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to quantify the effects of various epitaxial growth process parameters on the resulting SiC epitaxial layers. This paper summarizes the results obtained through statistically designed experiments varying process parameters and their resultant effect on the layer thickness, carrier concentration and the variability of these parameters wafer-to-wafer, and within a wafer.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Epitaxial Growth Process of La0.7Ca0.3MnO3Thin Films on SrTiO3(001): Thickness-Dependent Inhomogeneity Caused by Excess Ti Atoms

2014 ◽  
Vol 14 (4) ◽  
pp. 1555-1560 ◽  
Author(s):  
Ryota Shimizu ◽  
Takeo Ohsawa ◽  
Katsuya Iwaya ◽  
Susumu Shiraki ◽  
Taro Hitosugi
Keyword(s):  
Epitaxial Growth ◽  
Growth Process

Variations in Magnetic Hyperfine fields for Thin Epitaxial Heterostructures Of (110)Fe ON (111)Ag

1989 ◽  
Vol 151 ◽  
Author(s):  
C. J. Gutierrez ◽  
S. H. Mayer ◽  
Z. Q. Qiu ◽  
H. Tang ◽  
J. C. Walker
Keyword(s):  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Growth Process ◽  
High Energy ◽  
Thin Layers ◽  
High Energy Electron ◽  
Hyperfine Fields ◽  
Iron Films ◽  
Magnetic Heterostructures ◽  
Epitaxial Heterostructures

ABSTRACTWe have made a study of magnetic heterostructures involving the epitaxial growth of (110)Fe on (111)Ag. The flatness and continuity of the films was verified by Reflection High Energy Electron Diffraction during the growth process. A series of structures were made with very thin intervening silver layers with thicker iron layers. The doping of appropriate layers by enriched Fe57 made it possible to examine the magnetic structure of the iron films as a function of depth. Preliminary results indicate that thin layers of silver sandwiched between two very thin Fe layers are able to transmit conduction electron polarization, resulting in iron behavior which resembles that of bulk iron. Implications of these results for understanding the nature of the magnetization of iron will be addressed in the following.

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs

2009 ◽  
Vol 156 (12) ◽  
pp. H979 ◽  
Author(s):  
Matty Caymax ◽  
Frederik Leys ◽  
Jéro^me Mitard ◽  
Koen Martens ◽  
Lijun Yang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
Device Performance

Surface photo-absorption study of the laser-assisted atomic layer epitaxial growth process of GaAs

1993 ◽  
Vol 225 (1-2) ◽  
pp. 40-46 ◽  
Author(s):  
J.P. Simko ◽  
T. Meguro ◽  
S. Iwai ◽  
K. Ozasa ◽  
Y. Aoyagi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Growth Process ◽  
Atomic Layer ◽  
Absorption Study
Sign in / Sign up

Export Citation Format

Share Document