A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process

2007 ◽  
Vol 556-557 ◽  
pp. 57-60
Author(s):  
James D. Oliver ◽  
Brian H. Ponczak
Keyword(s):  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Layer Thickness ◽  
Process Parameters ◽  
Growth Process ◽  
Epitaxial Layers ◽  
Designed Experiments ◽  
Planetary Rotation ◽  
Designed Experiment ◽  
Resultant Effect

A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to quantify the effects of various epitaxial growth process parameters on the resulting SiC epitaxial layers. This paper summarizes the results obtained through statistically designed experiments varying process parameters and their resultant effect on the layer thickness, carrier concentration and the variability of these parameters wafer-to-wafer, and within a wafer.

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

2018 ◽  
Vol 924 ◽  
pp. 432-435 ◽  
Author(s):  
Mitsuhiro Kushibe ◽  
Johji Nishio ◽  
Ryosuke Iijima ◽  
Akira Miyasaka ◽  
Hirokuni Asamizu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Carrier Lifetime ◽  
Epitaxial Layers ◽  
Carrier Lifetimes ◽  
Post Annealing

Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs for the 150 µm thick epitaxial layer. The internal carrier lifetime was estimated as 21 µs from the dependence of the measured carrier lifetime on the epitaxial layer thickness. This value is almost comparable to the reported values of the internal carrier lifetime for the layers grown on the Si-face.

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs

2009 ◽  
Vol 156 (12) ◽  
pp. H979 ◽  
Author(s):  
Matty Caymax ◽  
Frederik Leys ◽  
Jéro^me Mitard ◽  
Koen Martens ◽  
Lijun Yang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
Device Performance

High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 93-96 ◽  
Author(s):  
Hrishikesh Das ◽  
Swapna G. Sunkari ◽  
Timothy Oldham ◽  
Janna R. B. Casady ◽  
Jeff B. Casady
Keyword(s):  
Surface Roughness ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
Growth Process ◽  
Process Conditions ◽  
Epitaxial Layers ◽  
High Uniformity ◽  
Highly Uniform ◽  
Reduced Surface

In this work we present the epitaxial growth of 4H-SiC on 100mm 4° off-axis substrates grown in a multi-wafer CVD planetary reactor. Highly uniform epitaxial layers having thickness and doping uniformities of 1.7% and 1.4% respectively were grown in the production reactor with optimized process conditions at 8µm/hr and 30µm/hr growth rates. Process optimizations resulted in epitaxial layers with surface roughness (RMS) of 0.32nm. Epitaxial layers with a thickness of 53µm grown with a 30µm/hr growth process had minimal degradation in surface roughness (RMS of 0.39nm).

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 193-196 ◽  
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Jun Yong Kang ◽  
Wei Ning Qian ◽  
Li Ping Lv ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
High Quality ◽  
Substrate Quality ◽  
Large Growth

The large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth on 100 mm N-type 4H-SiC Si-face substrates misoriented by 4° toward [11-20] with a warm-wall planetary reactor. The formation and reduction of LGPs have been investigated by adjusting the growth process parameters. With the optimized process, the perfect surface morphology with lower LGPs density has been obtained on the high quality substrate.

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System

2014 ◽  
Vol 778-780 ◽  
pp. 214-217 ◽  
Author(s):  
Kentaro Tamura ◽  
Chiaki Kudou ◽  
Keiko Masumoto ◽  
Johji Nishio ◽  
Kazutoshi Kojima
Keyword(s):  
Confocal Microscopy ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Epitaxial Layers ◽  
Differential Interference Contrast ◽  
Step Bunching

We have grown epitaxial layers on 2° off-cut 4H-SiC(0001) Si-face substrates. The epitaxial layer surfaces on 2° off-cut substrates are more prone to generate step-bunching than on 4° off-cut substrates, which are observed by confocal microscopy with differential interference contrast. We have speculated that the step-bunching is generated at the beginning of an epitaxial growth. Triangular defect density of epitaxial layers on 2° off-cut substrates is as low as 0.7 cm–2 for the size corresponding to 150 mm. We have firstly reported distribution of 2° off-cut epitaxial layers for the 150-mm size using two 76.2-mm wafers: σ/mean = 3.3% for thickness, σ/mean = 7.3% for carrier concentration.

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers

2009 ◽  
Vol 615-617 ◽  
pp. 101-104 ◽  
Author(s):  
James D. Oliver ◽  
Brian H. Ponczak ◽  
Rinku P. Parikh ◽  
Raymond A. Adomaitis
Keyword(s):  
Epitaxial Growth ◽  
Process Parameters ◽  
Basis Functions ◽  
Growth Processes ◽  
Planetary Rotation

A method to improve the uniformity of epitaxial wafers grown in planetary rotation reactors through analysis of intentionally stalled wafer measurements is described. A set of basis functions that are completely uniform when rotated in the reactor environment are described and used to construct a nearest uniformity producing profile (NUPP). The methodology for use of stalled wafer profiles and comparison to the NUUP allows easy identification of the changes in process parameters necessary for more uniform epitaxial growth. Although described here as applied to SiC epitaxial growth, this method is applicable to all planetary rotation reactors which are utilized for SiC and III-V semiconductor epitaxial growth.

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

2019 ◽  
Vol 963 ◽  
pp. 123-126
Author(s):  
Tobias Höchbauer ◽  
Christian Heidorn ◽  
Nikolaos Tsavdaris
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Basal Plane Dislocation

The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor

2016 ◽  
Vol 858 ◽  
pp. 189-192 ◽  
Author(s):  
Gan Feng ◽  
Yong Qiang Sun ◽  
Wei Ning Qian ◽  
Li Ping Lv ◽  
Jian H. Zhao ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Process ◽  
High Efficiency ◽  
Conversion Ratio ◽  
Epitaxial Layers ◽  
Initial Surface ◽  
Surface Conditions

The process of the epitaxial growth of 4H-SiC has been optimized to obtain higher ratio of conversion of BPDs to the TEDs on 100 mm substrates in a warm-wall planetary reactor. 100% BPD conversion ratio was successfully obtained with excellent surface morphology under optimized growth process. The high efficiency of the optimized growth process in BPD conversion is independent of the initial surface conditions and BPD density of the substrates.

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