The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs

2009 ◽  
Vol 156 (12) ◽  
pp. H979 ◽  
Author(s):  
Matty Caymax ◽  
Frederik Leys ◽  
Jéro^me Mitard ◽  
Koen Martens ◽  
Lijun Yang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
Device Performance

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs

2019 ◽  
Vol 19 (1) ◽  
pp. 183-194 ◽  
Author(s):  
Matty R. Caymax ◽  
Frederik Leys ◽  
Jerome Mitard ◽  
Koen Martens ◽  
Lijun Yang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
Device Performance

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 193-196 ◽  
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Jun Yong Kang ◽  
Wei Ning Qian ◽  
Li Ping Lv ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
High Quality ◽  
Substrate Quality ◽  
Large Growth

The large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth on 100 mm N-type 4H-SiC Si-face substrates misoriented by 4° toward [11-20] with a warm-wall planetary reactor. The formation and reduction of LGPs have been investigated by adjusting the growth process parameters. With the optimized process, the perfect surface morphology with lower LGPs density has been obtained on the high quality substrate.

A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process

2007 ◽  
Vol 556-557 ◽  
pp. 57-60
Author(s):  
James D. Oliver ◽  
Brian H. Ponczak
Keyword(s):  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Layer Thickness ◽  
Process Parameters ◽  
Growth Process ◽  
Epitaxial Layers ◽  
Designed Experiments ◽  
Planetary Rotation ◽  
Designed Experiment ◽  
Resultant Effect

A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to quantify the effects of various epitaxial growth process parameters on the resulting SiC epitaxial layers. This paper summarizes the results obtained through statistically designed experiments varying process parameters and their resultant effect on the layer thickness, carrier concentration and the variability of these parameters wafer-to-wafer, and within a wafer.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Improved Meltback Procedures for Liquid-Phase-Epitaxial Growth of Planar and Buried Heterostructures

1982 ◽  
Vol 14 ◽  
Author(s):  
B. H. Chin ◽  
A. K. Chin ◽  
M. A. Digiuseppe ◽  
I. A. Lourenco ◽  
I. Camlibel
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Indium Phosphide ◽  
Epitaxial Growth ◽  
Flat Surface ◽  
Device Performance ◽  
Buried Heterostructure ◽  
Liquid Phase Epitaxial Growth ◽  
Scattering Light ◽  
Heterostructure Devices

ABSTRACTIn the liquid phase epitaxy on indium phosphide, the substrate,just prior to the growth of the first epitaxial layer, is commonly etched back with an indium melt to remove any thermallydegraded surface and to ensure uniform and consistent wetting.This procedure, however, often produces defects which degrade both planar and buried heterostructure devices. For planar edgeemitters and lasers, the resulting rippled surface morphology degrades device performance by scattering light. For buried heterostructures, the meltback in the regrowth step leads to indium-rich inclusions. The effects of meltback on material quality are presented, and a new multiple meltback procedure which maintains flat surface morphology and eliminates inclusions is described.

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