Thermal Properties of Cr- and Ni- Silicide Thin Films

Author(s):  
Nam Ihn Cho ◽  
Se Jong Lee ◽  
Yo Seung Song ◽  
Deuk Yong Lee
1990 ◽  
Vol 203 ◽  
Author(s):  
R.P. Tye ◽  
A. Maesono

ABSTRACTMaterials in use or under consideration for many applications in new and emerging technologies are often available only in small quantities and many times in the form of thin films, wafers and sheets. Such size and form limitations present a number of challenges to those wishing to evaluate thermal performance characteristics. This has resulted in a need to develop totally new transient or modify current transient and steady state techniques significantly. Various new or modified techniques to measure thermophysical properties are described. Illustrations of, applications to and results on semiconductors, superconductors, diamonds, polymers, composites and layered structures will be discussed.


2019 ◽  
Vol 498 ◽  
pp. 143666 ◽  
Author(s):  
C.I. da Silva-Oliveira ◽  
D. Martinez-Martinez ◽  
F.M. Couto ◽  
L. Cunha ◽  
F. Macedo

2015 ◽  
Vol 106 (22) ◽  
pp. 223106 ◽  
Author(s):  
Masahiro Nomura ◽  
Yuta Kage ◽  
David Müller ◽  
Dominik Moser ◽  
Oliver Paul

1998 ◽  
Vol 103-104 ◽  
pp. 389-394 ◽  
Author(s):  
Y Funada ◽  
K Awazu ◽  
K Shimamura ◽  
M Iwaki

2015 ◽  
Vol 793 ◽  
pp. 440-444
Author(s):  
J.H. Lim ◽  
Cheow Keat Yeoh ◽  
Chik Abdullah ◽  
Pei Leng Teh

Al-doped ZnO thin films were prepared by ink-jet printing and their electrical and thermal properties with different amounts of Al doping and sintering atmosphere were investigated. The XRD traces of films show the doped materials did not form additional crystalline phases with increasing amounts of Al doping. Electrical conductivity of film increased from 4.86 S/cm to 120.94 S/cm as the amounts of Al doping increased from 0 wt% to 4 wt%. However, the thermal conductivity decreased from 24 W/mK to 13 W/mK with increasing the Al doping from 0 wt% to 4 wt%. The electrical conductivity of film shows higher values sintered in vacuum (120.94 S/cm) compared to film sintered in air (114.1 S/cm).


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Arkadiusz P. Gertych ◽  
Anna Łapińska ◽  
Karolina Czerniak-Łosiewicz ◽  
Anna Dużyńska ◽  
Mariusz Zdrojek ◽  
...  

Abstract A deep understanding of the thermal properties of 2D materials is crucial to their implementation in electronic and optoelectronic devices. In this study, we investigated the macroscopic in-plane thermal conductivity (κ) and thermal interface conductance (g) of large-area (mm2) thin film made from MoS2 nanoflakes via liquid exfoliation and deposited on Si/SiO2 substrate. We found κ and g to be 1.5 W/mK and 0.23 MW/m2K, respectively. These values are much lower than those of single flakes. This difference shows the effects of interconnections between individual flakes on macroscopic thin film parameters. The properties of a Gaussian laser beam and statistical optothermal Raman mapping were used to obtain sample parameters and significantly improve measurement accuracy. This work demonstrates how to address crucial stability issues in light-sensitive materials and can be used to understand heat management in MoS2 and other 2D flake-based thin films.


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