Effect of Sintering Atmosphere on the Electrical and Thermal Properties of Al-Doped ZnO Thin Films Prepared Using Inkjet Printing Method

2015 ◽  
Vol 793 ◽  
pp. 440-444
Author(s):  
J.H. Lim ◽  
Cheow Keat Yeoh ◽  
Chik Abdullah ◽  
Pei Leng Teh
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Thermal Properties ◽  
Inkjet Printing ◽  
Zno Thin Films ◽  
Al Doping ◽  
Sintering Atmosphere ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno

Al-doped ZnO thin films were prepared by ink-jet printing and their electrical and thermal properties with different amounts of Al doping and sintering atmosphere were investigated. The XRD traces of films show the doped materials did not form additional crystalline phases with increasing amounts of Al doping. Electrical conductivity of film increased from 4.86 S/cm to 120.94 S/cm as the amounts of Al doping increased from 0 wt% to 4 wt%. However, the thermal conductivity decreased from 24 W/mK to 13 W/mK with increasing the Al doping from 0 wt% to 4 wt%. The electrical conductivity of film shows higher values sintered in vacuum (120.94 S/cm) compared to film sintered in air (114.1 S/cm).

Thermoelectric Properties of Al Doped ZnO Thin Films Fabricated through Inkjet Printing

2019 ◽  
Vol 298 ◽  
pp. 214-219 ◽  
Author(s):  
J.H. Lim
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Zno Thin Films ◽  
Al Doping ◽  
Wurtzite Phase ◽  
Ink Jet Printing ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno

The effects of Al doping to the thermoelectric properties of ZnO thin films fabricated through ink-jet printing were studied in this paper. Ink-jet printing was used to deposit the Al doped ZnO thin films. A minimum of 50 print cycles was required to obtain continuous film with approximately 9 μm thick thin films. It was possible to obtain high thermoelectric properties of ZnO by controlling the ratios of dopant added and the temperature of the heat treatments.The XRD traces of Al doped ZnO exhibit a polycrystalline hexagonal structure for the wurtzite phase of ZnO. There were no additional phase detected for Al doped ZnO thin films with increasing amount of Al dopants and heat treatment temperature. The results show Al doping had improved the thermoelectric properties of ZnO with an increased in electrical conductivity. The electrical conductivity of pure ZnO thin film (5 S/cm) was enhanced with increasing the dopant to 4wt% Al doped ZnO (114 S/cm). Negative Seebeck values were observed for all the samples that indicated n-type semiconductor. Pure ZnO samples have a measured Seebeck coefficient-17.63 μV/K decreased to-14.35 μV/K with 4 wt% Al doped.

scholarly journals Ink-Jet Printing of Aqueous Inks for Single-Layer Deposition of Al-Doped ZnO Thin Films

2016 ◽  
Vol 99 (4) ◽  
pp. 1353-1359 ◽  
Author(s):  
Kenny Vernieuwe ◽  
Jonas Feys ◽  
Dieter Cuypers ◽  
Klaartje De Buysser
Keyword(s):  
Thin Films ◽  
Single Layer ◽  
Zno Thin Films ◽  
Ink Jet Printing ◽  
Layer Deposition ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno

Room temperature ferromagnetism of Fe-doped ZnO and MgO thin films prepared by ink-jet printing

2012 ◽  
Vol 1394 ◽  
Author(s):  
Mei Fang ◽  
Wolfgang Voit ◽  
Adrica Kyndiah ◽  
Yan Wu ◽  
Lyubov Belova ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Magnetic Insulator

ABSTRACTRoom temperature magnetic properties of un-doped, as well as 10 at.% Fe-doped ZnO and MgO single-pass layer of ink-jet printed thin films have been investigated to obtain insight into the role of the band gaps and mechanisms for the origin of ferromagnetic order in these materials. It is found that on doping with Fe, the saturation magnetization is enhanced by several-fold in both systems when compared with the respective un-doped thin films. For a “28 nm thick film of Fe-doped ZnO (Diluted Magnetic Semiconductor, DMS) we observe an enhanced moment of 0.465μB /Fe atom while it is around 0.111μB/Fe atom for the doped MgO (Diluted Magnetic Insulator, DMI) film of comparable thickness. Also, the pure ZnO is far more ferromagnetic than pure MgO at comparable low film thicknesses which can be attributed to defect induced magnetism originating from cat-ion vacancies. However, the film thickness dependence of the magnetization and the defect concentrations are found to be significantly different in the two systems so that a comparison of the magnetism becomes more complex for thicker films.

Origin of enhanced carrier mobility and electrical conductivity in seed-layer assisted sputtered grown Al doped ZnO thin films

2020 ◽  
Vol 700 ◽  
pp. 137916 ◽  
Author(s):  
Naveen Kumar ◽  
Ashraful Haider Chowdhury ◽  
Behzad Bahrami ◽  
Mamun Reza Khan ◽  
Qiquan Qiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Seed Layer ◽  
Carrier Mobility ◽  
Zno Thin Films ◽  
Doped Zno

Preparation of N Doped ZnO Films by Magnetron Sputtering

2011 ◽  
Vol 197-198 ◽  
pp. 348-351
Author(s):  
Shan Shan Luo ◽  
Wen Kui Li ◽  
Ze Hua Zhou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Flow Rate ◽  
Zno Thin Films ◽  
Zno Films ◽  
Al Doping ◽  
Co Doping ◽  
N Doping ◽  
Doped Zno

N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N2flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N2. The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.

scholarly journals Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

2016 ◽  
Vol 4 (1) ◽  
Author(s):  
R. Radha ◽  
A. Sakthivelu ◽  
D. Pradhabhan
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Dopant Concentration ◽  
Blue Shift ◽  
Zno Thin Films ◽  
Zno Films ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
Mo Doping ◽  
Doped Zno

<em>Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration. </em>

Enhanced thermoelectric properties of Al-doped ZnO thin films

2013 ◽  
Vol 1543 ◽  
Author(s):  
P. Mele ◽  
S. Saini ◽  
H. Abe ◽  
H. Honda ◽  
K. Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superior Performance ◽  
Zno Thin Films ◽  
Doped Zno

ABSTRACTWe have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C – 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

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