Surface Roughness and Morphology Analysis Using an Atomic Force Microscopy of Polycrystalline Diamond Coated Si3N4 Deposited by Microwave Plasma Assisted Chemical Vapor Deposition

2008 ◽  
pp. 153-160
Author(s):  
A. Purniawan ◽  
E. Hamzah ◽  
M.R.M. Toff
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Force Microscopy ◽  
Atomic Force ◽  
Morphology Analysis

Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Dark Conductivity ◽  
Rf Plasma ◽  
Hydrogen Treatment ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

Surface Roughness and Morphology Analysis Using an Atomic Force Microscopy of Polycrystalline Diamond Coated Si3N4 Deposited by Microwave Plasma Assisted Chemical Vapor Deposition

2008 ◽  
Vol 136 ◽  
pp. 153-160
Author(s):  
Agung Purniawan ◽  
E. Hamzah ◽  
M.R.M. Toff
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Power ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Chamber Pressure ◽  
Diamond Nucleation ◽  
Deposition Parameters

Diamond is the hardest material and has high chemical resistant which is one form of carbon. In the present work a study was carried out on polycrystalline diamond coated Si3N4 substrate. The diamond was deposited by Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) under varying deposition parameters namely CH4 diluted in H2, microwave power and chamber pressure. SEM and AFM are used to investigate the surface morphology and surface roughness. Nucleation phenomena and crystal width were also studied using AFM. Based on SEM investigation it was found that the chamber pressure and %CH4 have more significant effects on nucleation and facet of polycrystalline diamond, In addition microwave power has an effect on the diamond facet that changed from cubic to cauliflower structure. Surface roughness results show that increasing the %CH4 has decreased surface roughness 334.83 to 269.99 nm at 1 to 3% CH4, respectively. Increasing microwave power leads to increase in diamond nucleation and coalescence which lead to less surface roughness. Increasing gas pressure may eliminate Si contamination however it reduces diamond nucleation.

Morphology of twinned diamond particles

1995 ◽  
Vol 10 (12) ◽  
pp. 3037-3040 ◽  
Author(s):  
Long Wang ◽  
John C. Angus ◽  
David Aue
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Surface Normal ◽  
Normal Algorithm ◽  
Diamond Particles

Morphology of twinned diamond particles grown by chemical vapor deposition was characterized by atomic force microscopy in both contact and tapping modes. Quantitative angle measurements using a surface normal algorithm were performed on untwinned crystals, penetration twins, re-entrant corners, and fivefold dimples. Tip-sample interaction is discussed. The morphology of the penetration twins and some of the re-entrant corners can be explained by low order Σ3 twins and flat crystallographic surfaces. Abnormally shallow re-entrants with large vicinal faces are attributed to rapid nucleation of new layers at a point along the re-entrant intersection.

Growth of Single-Walled Carbon Nanotubes by Microwave Plasma Enhanced Chemical Vapor Deposition

2004 ◽  
Vol 858 ◽  
Author(s):  
Matthew R. Maschmann ◽  
Amit Goyal ◽  
Zafar Iqbal ◽  
Timothy S. Fisher ◽  
Roy Gat
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Force Microscopy ◽  
Single Walled Carbon ◽  
Atomic Force ◽  
Walled Carbon Nanotubes

ABSTRACTSingle-walled carbon nanotubes (SWCNTs) have been grown for the first time by microwave plasma-enhanced chemical vapor deposition (PECVD) at 800°C using methane as the precursor and bimetallic Mo/Co catalyst supported on MgO dispersed on a silicon wafer. The nanotubes grown consist of bundles, each composed of individual tubes of a single diameter associated with either metallic or semiconducting SWCNTs, based on characterization by Raman spectroscopy. Field-emission scanning electron microscopy and atomic force microscopy show that the bundles are relatively thin – 5 to 10 nm in diameter – and up to a few micrometers in length. The results are compared with those obtained on recently reported SWCNTs grown by radio frequency PECVD.

Sign in / Sign up

Export Citation Format

Share Document