Substrate Temperature Effects on the Structural and Optical Properties of TiO2-Doped ZnO Films for Organic Photovoltaic Devices

2013 ◽  
Vol 275-277 ◽  
pp. 1964-1967 ◽  
Author(s):  
T. Zhang ◽  
Z.Y. Zhong ◽  
J. Zhou ◽  
F.L. Sun
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Crystallite Size ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Optical Bandgap ◽  
Zno Films ◽  
Glass Substrates ◽  
Doped Zno ◽  
Deposited Films

TiO2-doped ZnO thin films with highly (002)-preferred orientation were grown on glass substrates by RF magnetron sputtering. The effect of substrate temperature on structure and optical properties of the films were investigated by X-ray diffractometer and spectrophotometer. The results show that the polycrystalline TiO2-doped ZnO films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate. The substrate temperature significantly affects the crystallite size and optical transmittance of the deposited films, but slightly influences the refractive index and optical bandgap of the deposited films. The TiO2-doped ZnO film grown at substrate temperature of 470 K possesses the maximum crystallite size, an average transmittance of 76.2 % in the visible light range, and an optical bandgap of 3.46 eV.

EFFECTS OF SUBSTRATE TEMPERATURE ON THE DOPING CHARACTERISTICS OF Li-W CO-DOPED ZnO FILMS

2014 ◽  
Vol 21 (01) ◽  
pp. 1450003 ◽  
Author(s):  
YUEHUI HU ◽  
YICHUAN CHEN ◽  
XIAOHUA ZHANG ◽  
DEFU MA ◽  
JUNXIANG WANG ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Zno Films ◽  
Glass Substrates ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Co Doped

Li - W co-doped ZnO (LWZO) thin films were deposited on quartz glass substrates by RF magnetron sputtering technology. The properties of LWZO films deposited with varied substrate temperatures were investigated. When the substrate temperature was lower than 120°C — according to X-ray diffraction (XRD) patterns, films keep hexagonal wurtzite structure with the (002) plane as preferred orientation — the optical transmittance was higher than 85%. When the substrate temperature was higher than 120°C, the results of XPS and XRD show that W 6+ will work as donors, and the (101) peak appeared; the optical transmittance decreased slightly but still higher than 82%. Scanning electron microscope (SEM) and its two-dimensional Fourier transform images showed that films had smooth surface and columnar particles structure when the substrate temperature was lower than 120°C. The film surface became rougher and flaky-shaped particles structure could be observed when the substrate temperature was higher than 120°C. In addition, the lowest electrical resistivity of sample was 3.6 × 10-3 Ω ⋅ cm which was obtained at substrate temperature 240°C.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Indium Doped ZnO Films Prepared by RF Magnetron Sputtering: Effect of Substrate Temperature on the Strain-Induced Band Gap

2012 ◽  
Vol 12 (3) ◽  
pp. 2503-2508 ◽  
Author(s):  
Georgi P. Daniel ◽  
David Devraj Kumar ◽  
V. B. Justinvictor ◽  
Prabitha B. Nair ◽  
K. Joy ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

2007 ◽  
Vol 515 (24) ◽  
pp. 8785-8788 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
François Jomard ◽  
Ana M. Botelho do Rego ◽  
Elangovan Elamurugu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Influence Of Substrate

STUDY ON THE STRUCTURE AND OPTICAL PROPERTIES OF Zn1-xCrxO FILMS BY RF MAGNETRON SPUTTERING TECHNIQUE

2008 ◽  
Vol 22 (30) ◽  
pp. 5279-5287
Author(s):  
J. JU ◽  
X. M. WU ◽  
L. J. ZHUGE
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Zno Films ◽  
Ultraviolet Region ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Cr Concentration

Zn 1-x Cr x O (x = 0, 0.03, 0.09) films were prepared by the radio frequency (RF) magnetron sputtering technique on Si (111) and quartz glass substrates. The effects of Cr -doping on the structural and optical properties of ZnO films have been discussed. The structural properties were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM) while optical properties using UV-Visible spectrophotometer (UV-VIS). XRD measurement revealed that the films were single phase and wurtzite structure with c-axis orientation. With the increase of Cr concentration, the intensity of the (002) peak and the grain size of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films decreased, and the Full Width at Half Maximum (FWHM) of (002) peak, the crystal lattice parameter c of Zn 1-x Cr x O (x = 0, 0.03, 0.09) films and the width of optical band gap increased, respectively. In the transmittance spectra of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films, the movement of the absorption edge of the ultraviolet region is the Burstein–Moss shift with the increase of Cr concentration.

Influence of Sputtering Power and Substrate Temperature on Properties of Al2O3-Doped ZnO Films

2012 ◽  
Vol 557-559 ◽  
pp. 1945-1949
Author(s):  
Ge Yu ◽  
Ya Liu ◽  
Dan Hong Hong ◽  
Dong Lin Li ◽  
Jian Xin Zang
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Atomic Force ◽  
Argon Flow ◽  
Sputtering Power ◽  
Diffraction Peaks ◽  
Substrate Temperatures

Aluminum oxide-doped zinc oxide (AZO) films were deposited by radio frequency (RF) magnetron sputtering at various substrate temperatures and sputtering powers with pure argon flow. Their electrical and optical properties and microstructures were investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), ultraviolet-visible spectrophotometer, four-probe tester. The investigation indicates that the electrical and optical properties and microstructures of the AZO films are remarkably influenced by substrate temperature and sputtering power. With the sputtering power increasing from 60W to 180W, the diffraction peaks rise significantly, the resistivity decreases quickly and the visible transmission is all quite high. When the substrate temperature increases from 25°C to 400°C, the diffraction peaks rise first and lower then both quickly, the resistivity decreases first sharply and then very slowly, and the visible transmission is also high. The films deposited at the substrate temperature 300°C with the sputtering power 180W have low resistivity 1.2×10–3 Ω•cm and high transmittance 92% at the same time.

Sign in / Sign up

Export Citation Format

Share Document