High Temperature Annealing Amorphous Hydrogenated SiC Films for the Application as Window Layers in Si-Based Solar Cell

2013 ◽  
Vol 401-403 ◽  
pp. 631-634 ◽  
Author(s):  
Rong Dun Hong ◽  
Xia Ping Chen ◽  
Qian Huang ◽  
Yan Nan Xie ◽  
Shao Xiong Wu ◽  
...  
Keyword(s):  
Refractive Index ◽  
Solar Cell ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Window Layer ◽  
High Temperature Annealing ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Sic Films

Amorphous hydrogenated silicon carbide (a-Si1-xCx:H) films were deposited by plasma enhanced chemical vapor deposition and subsequently annealed in N2 atmosphere at 1100 °C. The effects of high temperature annealing on the film’s optical and structural properties were systematically analyzed. It was noted that after high temperature annealing, amount of Si-C bonds increased significantly and SiC nanocrystalline was formed on the surface of the film, which resulted in an increasing refractive index in wavelength range of visible light, a decreasing absorbance index (wavelength<433.5 nm) and an increasing optical bandgap of the film. The changes of the optical properties illustrated that the performance of Si-based solar cell with a-Si1-xCx:H window layer could be improved by high temperature annealing.

Amorphous Hydrogenated Silicon Films for Solar Cell Application Obtained with 55 kHz Plasma Enhanced Chemical Vapor Deposition

1998 ◽  
Vol 145 (7) ◽  
pp. 2508-2512 ◽  
Author(s):  
B. G. Budaguan ◽  
A. A. Sherchenkov ◽  
D. A. Stryahilev ◽  
A. Y. Sazonov ◽  
A. G. Radosel'sky ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Solar Cell Application ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

scholarly journals Исследование нелегированных нанокристаллических алмазных пленок, выращенных из газовой фазы в плазме СВЧ разряда

2021 ◽  
Vol 55 (1) ◽  
pp. 49
Author(s):  
А.Л. Вихарев ◽  
С.А. Богданов ◽  
Н.М. Овечкин ◽  
О.А. Иванов ◽  
Д.Б. Радищев ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Inert Gas ◽  
Dielectric Films ◽  
High Temperature Annealing ◽  
Structural And Electrical Properties ◽  
Methane Mixture

Undoped nanocrystalline diamond (NCD) films less than 1 μm thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600°C for one hour.

Introducing Voids around the Interlayer of AlN by High Temperature Annealing

2021 ◽  
Author(s):  
Jianwei Ben ◽  
Jiangliu Luo ◽  
Zhichen Lin ◽  
Xiaojuan Sun ◽  
Xinke Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Temperature Annealing ◽  
Simple Method ◽  
Metal Organic ◽  
Interlayer Structure ◽  
Organic Chemical Vapor Deposition

Abstract To introduce voids at certain height in AlN layer by a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure has been designed and grown by metal-organic chemical vapor deposition. Then the AlN template was annealed at 1700℃ for an hour to introduce the voids. It has been found that the voids were formed in the AlN layer after high temperature annealing and the positions of the voids were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template has been decreased from 5.26&#215;109 cm-2 to 5.10&#215;108 cm-2. This work provides a possible method to introduce voids in AlN layer at designated height, which will benefit the design of AlN-based devices.

scholarly journals Effect of C/Si Ratio on the Electrochemical Behavior of a-SiCx:H Coatings on SS301 Substrate Deposited by PECVD

2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
D. Li ◽  
S. Guruvenket ◽  
J. A. Szpunar ◽  
J. E. Klemberg-Sapieha
Keyword(s):  
Stainless Steel ◽  
Electrochemical Behavior ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Corrosion Current ◽  
Amorphous Structure ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Afm Analysis

Amorphous hydrogenated silicon carbide (a-SiCx:H) coatings were deposited on stainless steel 301 (SS301) using plasma enhanced chemical vapor deposition with the methane gas flow ranging from 30 to 90 sccm. XRD spectra confirmed the amorphous structure of these coatings. The as-deposited coatings all exhibited homogenous dense feature, and no porosities were observed in SEM and AFM analysis. The a-SiCx:H coatings remarkably increased the corrosion resistance of the SS301 substrate. With the increase of the C concentration, the a-SiCx:H coatings exhibited significantly enhanced electrochemical behavior. The a-SiCx:H coating with the highest carbon concentration acted as an excellent barrier to charge transfer, with a corrosion current of3.5×10-12 A/cm2and a breakdown voltage of 1.36 V, compared to2.5×10-8 A/cm2and 0.34 V for the SS301 substrate.

Sign in / Sign up

Export Citation Format

Share Document