Influence of Stark Effect and Quantum Wells Thickness on Optical Properties of InGaN Laser Diodes

2013 ◽  
Vol 440 ◽  
pp. 25-30 ◽  
Author(s):  
Shao Guang Dong ◽  
Guo Jie Chen
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Output Power ◽  
Recombination Rate ◽  
Stark Effect ◽  
Laser Diodes ◽  
Blue Shift ◽  
Threshold Current ◽  
Spectral Lines ◽  
Optical Proprieties

The influences of Stark Effect and quantum wells thickness on the optical properties of InGaN laser diodes have been studied. The results indicated that the Stark Effect greatly affects the optical properties of InGaN laser diodes, when the quantum wells thickness increases, the Stark Effect leads to deteriorating of the optical proprieties of the InGaN laser diodes. The polarization in the active layer of the InGaN laser diodes has been estimated by the blue shift of the spectral lines. The results shown that the better properties of InGaN laser diodes can be obtained with smaller quantum wells thickness, where more carriers can be restricted in the quantum wells, which leads to a larger recombination rate, which in turn increases the output power of the laser diodes, decreases the threshold current of the laser diodes.

Influence of AlInGaN Blocking Layer on the Violet InGaN Laser Diodes

2014 ◽  
Vol 915-916 ◽  
pp. 842-846
Author(s):  
Shao Guang Dong ◽  
Guo Jie Chen
Keyword(s):  
Quantum Wells ◽  
Output Power ◽  
Carrier Density ◽  
Laser Diodes ◽  
Temperature Characteristic ◽  
Threshold Current ◽  
Blocking Layer ◽  
Simulation Results ◽  
Density Threshold ◽  
Threshold Gain

The advantages of AlInGaN as a blocking layer on the influence of violet InGaN laser diodes have been simulated, these results showed that the temperature characteristic (T0) of the violet InGaN laser diodes with AlInGaN blocking layer is lower than theT0of the violet InGaN laser diodes with AlGaN blocking layer. These phenomenons are due to the improvement of electronics and holes distribution in the quantum wells with using AlInGaN blocking layer. Simulation results also showed that most optical characteristics of the violet InGaN laser diodes can be enhanced by using the AlInGaN blocking layer instead of the AlGaN blocking layer. The lower threshold current, carrier density, threshold gain and higher output power, slop efficiency of the violet InGaN laser diodes with the AlInGaN blocking layer have been obtained.

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct quantum-confined Stark effect

2012 ◽  
Vol 111 (6) ◽  
pp. 063701 ◽  
Author(s):  
Marko Stölzel ◽  
Johannes Kupper ◽  
Matthias Brandt ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Stark Effect ◽  
Electronic And Optical Properties ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots

MRS Bulletin ◽  
1998 ◽  
Vol 23 (2) ◽  
pp. 31-34 ◽  
Author(s):  
D. Bimberg ◽  
M. Grundmann ◽  
N.N. Ledentsov
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
State Of The Art ◽  
Laser Diodes ◽  
Threshold Current ◽  
High Gain ◽  
Gain Medium ◽  
Modern Technology ◽  
High Quantum Efficiency ◽  
Light Emitting

The development and application of semiconductor light-emitting and laser diodes has been a huge success during the last 30 years in key areas of modern technology like communications, recording, and printing. Still there is ample room for improvement through combination of the atomlike properties for zero-dimensionally localized carriers in quantum dots (QDs) with state-of-the-art semiconductor-laser technology. Low, temperature-insensitive threshold current; high gain; and differential gain have been predicted since the early 1980s.In the past two decades, the fabrication of QDs has been attempted using colloidal techniques (see the article by Nozik and Mićić in this issue), patterning, etching, and layer fluctuations (see the article by Gammon in this issue). However a break-through occurred recently through the employment of self-ordering mechanisms during epitaxy of lattice-mismatched materials (see the next section) for the creation of high-density arrays of QDs that exhibit excellent optical properties, particularly high quantum efficiency, up to room temperature. The zero-dimensional carrier confinement and subsequent atomlike electronic properties have a drastic impact on optical properties (see the section on Spectroscopy). Also intimately connected is the applicability of QDs as a novel gain medium in state-of-the-art laser diodes with superior properties (see the section on Lasers).

Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Amano ◽  
T. Takeuchi ◽  
S. Sota ◽  
H. Sakai ◽  
I. Akasaki
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Wells ◽  
Stark Effect ◽  
Compressive Strain ◽  
Ternary Alloys ◽  
Luminescence Properties ◽  
Structural And Optical Properties ◽  
Quantum Confined Stark Effect ◽  
Quantum Well Structure

ABSTRACTStructural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.

scholarly journals Semipolar {202̅1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1563
Author(s):  
Srinivas Gandrothula ◽  
Haojun Zhang ◽  
Pavel Shapturenka ◽  
Ryan Anderson ◽  
Matthew S. Wong ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Output Power ◽  
Laser Diode ◽  
Laser Diodes ◽  
Light Output ◽  
Laser Action ◽  
Feasibility Studies ◽  
Threshold Current ◽  
Optical Measurements ◽  
Light Output Power

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) “handmade” facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm−2 and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.

scholarly journals λ-Scale Embedded Active Region Photonic Crystal (LEAP) Lasers for Optical Interconnects

Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 82 ◽  
Author(s):  
Shinji Matsuo ◽  
Koji Takeda
Keyword(s):  
Photonic Crystal ◽  
Active Region ◽  
Power Consumption ◽  
Quantum Wells ◽  
Output Power ◽  
Optical Interconnects ◽  
Low Cost ◽  
Threshold Current ◽  
Active Volume ◽  
Wavelength Scale

The distances optical interconnects must cover are decreasing as Internet traffic continues to increase. Since short-reach interconnect applications require many transmitters, cost and power consumption are significant issues. Directly modulated lasers with a wavelength-scale active volume will be used as optical interconnects on boards and chips in the future because a small active volume is expected to reduce power consumption. We developed electrically driven photonic crystal (PhC) lasers with a wavelength-scale cavity in which the active region is embedded in a line-defect waveguide of an InP-based PhC slab. We call this a λ-scale embedded active region PhC laser, or a LEAP laser. The device, whose active region has six quantum wells with 2.5 × 0.3 × 0.15 μm3 active volume, exhibits a threshold current of 28 μA and provides 10 fJ/bit of operating energy to 25 Gbit/s NRZ (non-return-to-zero) signals. The fiber-coupled output power is 6.9 μW. We also demonstrate heterogeneous integration of LEAP lasers on a SiO2/Si substrate for low-cost photonic integrated circuits (PICs). The threshold current is 40.5 μA and the output power is 4.4 μW with a bias current of 200 μA. These results indicate the feasibility of using PhC lasers in very-short-distance optical communications.

InGaN/GaN/AlGaN-Based Leds and Laser Diodes

1998 ◽  
Vol 537 ◽  
Author(s):  
S. Nakamura ◽  
M. Senoh ◽  
S. Nagahama ◽  
N. Iwasa ◽  
T. Matushita ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
Output Power ◽  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Nonradiative Recombination ◽  
Window Region ◽  
Recombination Centers

AbstractInGaN quantum-well-structure blue LEDs were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The output power of both LEDs was as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that In composition fluctuation is not caused by threading dislocations (TDs), free carriers are captured by radiative recombination centers before they are captured by nonradiative recombination centers in InGaN, and that the dislocations form the leakage current pathway in InGaN. Red LED with an emission peak wavelength of 650 nm was fabricated by increasing the In composition and thickness of InGaN well layer. When the laser diodes (LD) was formed on the GaN layer above the SiO2 mask region, the threshold current density was as low as 3 kAcm-2. When the LD was formed on the window region, the threshold current density was as high as 6 to 9 kAcm-2. There is a possibility that a leakage current due to a large number of TDs caused the high threshold current density on the window region. InGaN multi-quantum-well (MQW) structure LDs grown on the ELOG substrate showed an output power as high as 420 mW under RT-CW operation. The longest lifetime of 9,800 hours at a constant output power of 2 mW was achieved. The InGaN MQW LDs were fabricated on a GaN substrate. The fundamental transverse mode was observed up to an output power of 80 mW.

Integration of a Quantum Well Laser with AlGaAs/GaAs-HEMT Electronics

1993 ◽  
Vol 300 ◽  
Author(s):  
W. Bronner ◽  
J. Hornung ◽  
K. Köhler ◽  
E. Olander ◽  
Z.-G. Wang
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Laser Action ◽  
Threshold Current ◽  
Contact Printing ◽  
Quantum Well Laser ◽  
First Results ◽  
Dry Etch ◽  
Cladding Layers

ABSTRACTIn this presentation the various technology steps for the monolithic integration of GaAs quantum well lasers with Double Pulse Doped AlGaAs/GaAs/AlGaAs Quantum Well (DPDQW) E/D HEMT electronics on a single substrate in one process run are described. All layers are grown by molecular beam epitaxy. The laser structure, consisting of three 74 Å GaAs quantum wells between two AlGaAs cladding layers, are grown on top of the electronic structure. The laser mesas and contact areas are defined by a combined wet and dry etch process. Apart from the transistor gates which are exposed by electron beam lithography, all lithography steps are performed using contact printing. A two layer metallization is used to interconnect the devices whereby air-bridges are used to connect the laser mesas to the electronics. First results showed laser action of laser diodes of area 3 x 300 μm2 at a threshold current of less than 60 mA, as well as the operation of different electronic devices on wafers which have been processed in this way. These include a laser diode driver, and an optoelectronic receiver with a MSM photo diode, both devices operating at a data rate of 5 Gbit/sec. These results indicate that the process sequence described is suitable for the integration of laser diodes and HEMT electronics.

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