scholarly journals λ-Scale Embedded Active Region Photonic Crystal (LEAP) Lasers for Optical Interconnects

Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 82 ◽  
Author(s):  
Shinji Matsuo ◽  
Koji Takeda
Keyword(s):  
Photonic Crystal ◽  
Active Region ◽  
Power Consumption ◽  
Quantum Wells ◽  
Output Power ◽  
Optical Interconnects ◽  
Low Cost ◽  
Threshold Current ◽  
Active Volume ◽  
Wavelength Scale

The distances optical interconnects must cover are decreasing as Internet traffic continues to increase. Since short-reach interconnect applications require many transmitters, cost and power consumption are significant issues. Directly modulated lasers with a wavelength-scale active volume will be used as optical interconnects on boards and chips in the future because a small active volume is expected to reduce power consumption. We developed electrically driven photonic crystal (PhC) lasers with a wavelength-scale cavity in which the active region is embedded in a line-defect waveguide of an InP-based PhC slab. We call this a λ-scale embedded active region PhC laser, or a LEAP laser. The device, whose active region has six quantum wells with 2.5 × 0.3 × 0.15 μm3 active volume, exhibits a threshold current of 28 μA and provides 10 fJ/bit of operating energy to 25 Gbit/s NRZ (non-return-to-zero) signals. The fiber-coupled output power is 6.9 μW. We also demonstrate heterogeneous integration of LEAP lasers on a SiO2/Si substrate for low-cost photonic integrated circuits (PICs). The threshold current is 40.5 μA and the output power is 4.4 μW with a bias current of 200 μA. These results indicate the feasibility of using PhC lasers in very-short-distance optical communications.

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

2003 ◽  
Vol 794 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Optical Loss ◽  
Threshold Current ◽  
Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

Influence of AlInGaN Blocking Layer on the Violet InGaN Laser Diodes

2014 ◽  
Vol 915-916 ◽  
pp. 842-846
Author(s):  
Shao Guang Dong ◽  
Guo Jie Chen
Keyword(s):  
Quantum Wells ◽  
Output Power ◽  
Carrier Density ◽  
Laser Diodes ◽  
Temperature Characteristic ◽  
Threshold Current ◽  
Blocking Layer ◽  
Simulation Results ◽  
Density Threshold ◽  
Threshold Gain

The advantages of AlInGaN as a blocking layer on the influence of violet InGaN laser diodes have been simulated, these results showed that the temperature characteristic (T0) of the violet InGaN laser diodes with AlInGaN blocking layer is lower than theT0of the violet InGaN laser diodes with AlGaN blocking layer. These phenomenons are due to the improvement of electronics and holes distribution in the quantum wells with using AlInGaN blocking layer. Simulation results also showed that most optical characteristics of the violet InGaN laser diodes can be enhanced by using the AlInGaN blocking layer instead of the AlGaN blocking layer. The lower threshold current, carrier density, threshold gain and higher output power, slop efficiency of the violet InGaN laser diodes with the AlInGaN blocking layer have been obtained.

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures.

2003 ◽  
Vol 799 ◽  
Author(s):  
V. M. Ustinov ◽  
A. E. Zhukov ◽  
A. R. Kovsh ◽  
N. A. Maleev ◽  
S. S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Optical Loss ◽  
Threshold Current ◽  
Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%) and low internal losses (α=3–4 cm-1 ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm2 (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

scholarly journals Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 875
Author(s):  
Wenjie Wang ◽  
Wuze Xie ◽  
Zejia Deng ◽  
Mingle Liao
Keyword(s):  
Quantum Wells ◽  
Output Power ◽  
Laser Diode ◽  
Barrier Layer ◽  
Threshold Current ◽  
Reference Structure ◽  
Multiple Quantum ◽  
Symmetric Quantum ◽  
Low Threshold ◽  
P Type

Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In0.15Ga0.85N/In0.02Ga0.98N quantum wells, which is achieved with the simulation program Crosslight. It was found that the thickness of the first or last InGaN barrier has strong effects on the threshold currents and output powers of the laser diodes. The optimal thickness of the first quantum barrier layer (FQB) and last quantum barrier layer (LQB) were found to be 225 nm and 300 nm, respectively. The thickness of LQB layer predominantly affects the output power compared to that of the FQB layer, and the highest output power achieved 3.87 times that of the reference structure (symmetric quantum well), which is attributed to reduced optical absorption loss as well as the reduced vertical electron leakage current leaking from the quantum wells to the p-type region. Our result proves that an appropriate LQB layer thickness is advantageous for achieving low threshold current and high output power lasers.

scholarly journals Output power of multilayered InGaAs/GaAs quantum well-dot microdisk lasers

2021 ◽  
Vol 2086 (1) ◽  
pp. 012081
Author(s):  
N A Fominykh ◽  
E I Moiseev ◽  
Ju A Guseva ◽  
M V Maximov ◽  
A I Lihachev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Well ◽  
Output Power ◽  
Optical Power ◽  
Threshold Current ◽  
Sudden Drop ◽  
Output Optical Power ◽  
Number Of Layers ◽  
Microdisk Lasers

Abstract We studied the output optical power of microdisk lasers with InGaAs/GaAs quantum dots active region. An increase in the number of layers in the active region in the waveguide from 2 to 6 leads to increase in the peak output optical power due probably to increase of the gain. We also observe a corresponding increase of the threshold current due to the increase on the transparence current. The maximal optical power is achieved for structure with 6 layers at approximately 60 mA injection current. Further increase of the number of the QD layers to 10 results in increase of the threshold current and sudden drop of the output power.

Influence of Stark Effect and Quantum Wells Thickness on Optical Properties of InGaN Laser Diodes

2013 ◽  
Vol 440 ◽  
pp. 25-30 ◽  
Author(s):  
Shao Guang Dong ◽  
Guo Jie Chen
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Output Power ◽  
Recombination Rate ◽  
Stark Effect ◽  
Laser Diodes ◽  
Blue Shift ◽  
Threshold Current ◽  
Spectral Lines ◽  
Optical Proprieties

The influences of Stark Effect and quantum wells thickness on the optical properties of InGaN laser diodes have been studied. The results indicated that the Stark Effect greatly affects the optical properties of InGaN laser diodes, when the quantum wells thickness increases, the Stark Effect leads to deteriorating of the optical proprieties of the InGaN laser diodes. The polarization in the active layer of the InGaN laser diodes has been estimated by the blue shift of the spectral lines. The results shown that the better properties of InGaN laser diodes can be obtained with smaller quantum wells thickness, where more carriers can be restricted in the quantum wells, which leads to a larger recombination rate, which in turn increases the output power of the laser diodes, decreases the threshold current of the laser diodes.

Optimization of InGaN Based Light Emitting Diodes

2006 ◽  
Vol 517 ◽  
pp. 195-201
Author(s):  
N. Zainal ◽  
Abu Hassan Haslan ◽  
Hassan Zainuriah ◽  
M. Roslan Hashim ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Threshold Current ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Simulation Results ◽  
Industrial Software

The performance of InGaN quantum well based Light Emitting Diodes; (LEDs) had been numerically investigated by using standard industrial software, Silvaco. In this work, we found that InGaN single quantum well (SQW) LEDs gives better performance than InGaN triple quantum wells LEDs. The simulation results suggest that the inhomogeneity of electron and hole distributions in quantum wells active region plays an important role in the LEDs performance. The threshold current per μm also increases as the number of quantum well is increased.

Good Temperature Performances of 870nm Resonant Cavity Light Emitting Diode (RCLED)

2004 ◽  
Vol 829 ◽  
Author(s):  
Lih-Wen Laih ◽  
Yi-Hao Wu ◽  
Li-Hong Laih ◽  
Rong-Moo Hong ◽  
Hao-Chung Guo ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Output Power ◽  
High Performance ◽  
Transmission Rate ◽  
Resonant Cavity ◽  
Cutoff Frequency ◽  
Bragg Reflector ◽  
Wavelength Shift ◽  
Multiple Quantum

ABSTRACTA high performance of wavelength 870nm resonant cavity LED (RCLED) was fabricated. The high performance of InGaAs/GaAs multiple quantum wells (MQWs) and distributed Bragg reflector (DBR) were employed to achieve the high transmission rate. Two devices A and B were fabricated in this paper. Device A has an offset of 10nm between active region gain and resonant gain, and device B without it. Due to the wavelength shift of active region gain is faster than that of DBR's resonant gain at higher temperature. Device A shows the better temperature performances than device B. A cutoff frequency of 60MHz, a low forward voltage of 1.6V, a output power of 1mW at 10mA and a output power temperature variation (ΔP/ΔT) of –0.02dBm/ °C with chip dimensions of 220um × 220um and 85um diameter emitting window are obtained.

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