Analog Control of Continuous Copper Wire Annealing Based on Temperature Detecting

The paper acquires the equivalent relation between the velocity of wires and annealing temperature through deduction, based on the measurement of the annealing temperature. A controller characterizing annealing temperature could be inserted before the traditional PI annealing controller, so that annealing temperature could be controlled while the annealing temperature deviation is simulated by the error of the velocity of wires. In the paper, a kind of analog circuit is chosen to achieve the equivalent relation between the velocity of wires and annealing temperature by linear fitting under the condition of preciseness.

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Modeling and Development of Copper Wire Annealing Fuzzy Control System Based on Temperature Detecting

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.487.587 ◽

2014 ◽

Vol 487 ◽

pp. 587-590 ◽

Cited By ~ 1

Author(s):

Xue Jun Xu ◽

Yong Zhong Lin ◽

Hong Yang Sun ◽

Yi Gen Lu ◽

Tian Lv

Keyword(s):

Control System ◽

Temperature Control ◽

Annealing Temperature ◽

Copper Wire ◽

Pi Controller ◽

Temperature Control System ◽

Pi Control ◽

Continuous Annealing ◽

Fuzzy Pi Controller

Copper wire continuous annealing is a key process of the cable production line. The accuracy of the temperature control directly determines whether the quality of copper wire meets the requirements. In this paper, the fuzzy-PI compound controller was selected and the structure of the annealing temperature fuzzy-PI control system was designed based on temperature measurement. Through the simulation of traditional PI control system and the improved Fuzzy-PI control system, the results show that the Fuzzy-PI controller is better than traditional PI controller. It verifies the feasibility and effectiveness of the Fuzzy -PI controller and proves that Fuzzy-PI algorithm can be successfully applied to the copper wire continuous annealing temperature control system.

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Effect of annealing temperature on the texture of copper wire

The Physics of Metals and Metallography ◽

10.1134/s0031918x12070046 ◽

2012 ◽

Vol 113 (7) ◽

pp. 681-686 ◽

Cited By ~ 13

Author(s):

S. L. Demakov ◽

Yu. N. Loginov ◽

A. G. Illarionov ◽

M. A. Ivanova ◽

M. S. Karabanalov

Keyword(s):

Annealing Temperature ◽

Copper Wire

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Scanning and Transmission Electron Microscopy of Endomentrium in Women Wearing TCu-380-A IUD 's

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100080754 ◽

1977 ◽

Vol 35 ◽

pp. 666-667

Author(s):

A. Gonzalez Angulo ◽

R. Berlioz ◽

R. Aznar

Keyword(s):

Copper Wire ◽

Uterine Cavity ◽

Morphological Evidence ◽

Secretory Phase ◽

Ultrastructural Studies ◽

Proliferative Phase ◽

Contraceptive Devices ◽

Transmission Electron ◽

Intrauterine Contraceptive ◽

Myelin Figure

Recent ultrastructural studies on endometrial tissues from women wearing copper, wire intrauterine devices have disclosed morphological evidence of impaired glycogen degradation and secretion resulting in interference with the viability of blastocysts. Reduced microapocrine secretion observed with the scanning electron microscope supports this (1). In addition, organelle modifications have been observed in the epithelial cells of these women. The changes are seen in biopsies taken in the proliferative phase of the cycle and consist of mitochondrial vacuolation and myelin figure formation. These modifications disappear in the secretory phase and therefore have been regarded as reversible (2).The aim of the present studies was to investigate surface epithelial changes as well as organelle modifications in relation to the site of contact with an IUD that releases greater amounts of copper. Endometrial tissue was obtained from the uterine cavity of four young women wearing TCu-380-A intrauterine contraceptive devices for 4-6 weeks.

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Nucleation of Disorder in Fe3Al Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100061574 ◽

1967 ◽

Vol 25 ◽

pp. 312-313

Author(s):

P. R. Swann ◽

W. R. Duff ◽

R. M. Fisher

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Annealing Temperature ◽

Antiphase Domain ◽

Effect Of Temperature ◽

Domain Structures ◽

Transmission Electron ◽

Domain Boundaries ◽

Higher Temperature ◽

The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

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Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100087124 ◽

1991 ◽

Vol 49 ◽

pp. 562-563

Author(s):

F.-R. Chen ◽

T. L. Lee ◽

L. J. Chen

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

Thin Films ◽

Diffraction Pattern ◽

Annealing Temperature ◽

Lattice Mismatch ◽

Si Substrate ◽

Metal Thin Films ◽

Transmission Electron ◽

Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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Growth of near noble metal Pd and Pt thin film silicides morphology and structure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100112464 ◽

1984 ◽

Vol 42 ◽

pp. 498-499

Author(s):

E. I. Alessandrini ◽

M. O. Aboelfotoh

Keyword(s):

Noble Metals ◽

Annealing Temperature ◽

Chemical Compounds ◽

Barrier Properties ◽

Solid State Reactions ◽

Transmission Electron ◽

Stable Chemical ◽

Metal Thickness ◽

Amorphous Si ◽

Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154998 ◽

1989 ◽

Vol 47 ◽

pp. 604-605

Author(s):

P. Roitman ◽

B. Cordts ◽

S. Visitserngtrakul ◽

S.J. Krause

Keyword(s):

High Temperature ◽

Annealing Temperature ◽

Silicon On Insulator ◽

High Dose ◽

High Temperature Annealing ◽

High Current ◽

Defect Reduction ◽

Annealing Step ◽

Multiple Cycle ◽

Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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