Simulation of Temperature Distribution in HFCVD Diamond Films Growth on the Multitudinous Micro End Mills

2014 ◽  
Vol 1027 ◽  
pp. 163-166
Author(s):  
Bo Song ◽  
Bin Shen ◽  
Xue Lin Lei ◽  
Lei Cheng ◽  
Fang Hong Sun
Keyword(s):  
Temperature Distribution ◽  
Film Growth ◽  
Diamond Films ◽  
Filament Length ◽  
Substrate Distance ◽  
Filament Diameter ◽  
End Mills ◽  
Best Parameter ◽  
Diamond Film Growth

In the process of HFCVD diamond film growth on the multitudinous micro end mills, the uniformity and stability of the temperature distribution have a vital importance on the quality of film. So a new method by using the finite volume is proposed to analyze the importance of different disposition parameters on the uniformity of substrate temperature field. These parameters are filament diameter (d), filament-substrate distance (H), filament separation (S) and filament length (L). The mono-factor method are used to optimize the best parameter combination. The simulation results show that the optimized parameters are d=0.65mm, H=10mm, S=27mm and L=160mm.

scholarly journals Effect of Nitrogen on the Growth of (100)-, (110)-, and (111)-Oriented Diamond Films

2020 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Jen-Chuan Tung ◽  
Tsung-Che Li ◽  
Yen-Jui Teseng ◽  
Po-Liang Liu
Keyword(s):  
Growth Mechanism ◽  
Density Functional ◽  
Film Growth ◽  
Hydrogen Abstraction ◽  
Diamond Films ◽  
Activation Energies ◽  
Diamond Surface ◽  
Nitrogen Doped ◽  
Nitrogen Substitution ◽  
Diamond Film Growth

The aim of this research is the study of hydrogen abstraction reactions and methyl adsorption reactions on the surfaces of (100), (110), and (111) oriented nitrogen-doped diamond through first-principles density-functional calculations. The three steps of the growth mechanism for diamond thin films are hydrogen abstraction from the diamond surface, methyl adsorption on the diamond surface, and hydrogen abstraction from the methylated diamond surface. The activation energies for hydrogen abstraction from the surface of nitrogen-undoped and nitrogen-doped diamond (111) films were −0.64 and −2.95 eV, respectively. The results revealed that nitrogen substitution was beneficial for hydrogen abstraction and the subsequent adsorption of methyl molecules on the diamond (111) surface. The adsorption energy for methyl molecules on the diamond surface was generated during the growth of (100)-, (110)-, and (111)-oriented diamond films. Compared with nitrogen-doped diamond (100) films, adsorption energies for methyl molecule adsorption were by 0.14 and 0.69 eV higher for diamond (111) and (110) films, respectively. Moreover, compared with methylated diamond (100), the activation energies for hydrogen abstraction were by 0.36 and 1.25 eV higher from the surfaces of diamond (111) and (110), respectively. Growth mechanism simulations confirmed that nitrogen-doped diamond (100) films were preferred, which was in agreement with the experimental and theoretical observations of diamond film growth.

Theoretical Investigation of Fluorinated and Hydrocenated Diamond Filks

1992 ◽  
Vol 270 ◽  
Author(s):  
Mark R. Pederson ◽  
Warren E. Pickett
Keyword(s):  
Density Functional ◽  
Film Growth ◽  
Growth Models ◽  
Diamond Films ◽  
Diamond Surface ◽  
Free Standing ◽  
Level Shifts ◽  
Reconstructed Surface ◽  
Experimental Values ◽  
Diamond Film Growth

ABSTRACTTo investigate some of the fundamental differences between halogen and hydrogen assisted diamond film growth we have performed several calculations related to the <100> diamond surface. The models used in these investigations include ten-layer periodic slabs of free standing fluorinated diamond films as well as isolated clusters [C21F6H20]. For purposes of comparison, we have also performed calculations on models of the hydrogenated <100> surface. The calculations are performed within the density-functional framework using LCAO and LAPW computational methods. We have considered two geometries of a monofluoride surface. The first surface, best described as an ideal l×l surface with a monolayer of ionically bonded fluorines, exhibits a metallic density of states in contrast to a 2×l reconstructed surface with chemically bonded fluorines that is found to be insulating. We compare theoretical carbon core level shifts with experimental values and discuss growth models based on these surface calculations.

DYNAMIC SCALING PHENOMENA IN DIAMOND FILM GROWTH

2001 ◽  
Vol 08 (03n04) ◽  
pp. 347-351 ◽  
Author(s):  
M. CATTANI ◽  
M. C. SALVADORI
Keyword(s):  
Chemical Vapor Deposition ◽  
Differential Equations ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Diamond Films ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Dynamic Scaling ◽  
Diamond Film Growth

In this paper we investigate how the growth dynamics of diamond films, synthesized by plasma-enhanced chemical vapor deposition, can be explained within the framework of the Edwards–Wilkinson and Kardar–Parisi–Zhang stochastic differential equations.

scholarly journals Effect of Nano-Ni Catalyst on the Growth and Characterization of Diamond Films by HFCVD

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Chien-Chung Teng ◽  
Feng-Chi Ku ◽  
Chien-Min Sung ◽  
Jin-Pei Deng ◽  
Su-Fang Chien ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Diamond Film ◽  
Film Growth ◽  
Diamond Films ◽  
Diamond Powder ◽  
Carbon Layer ◽  
Ni Catalyst ◽  
Initial Growth ◽  
Diamond Crystals ◽  
Diamond Film Growth

Four different catalysts, nanodiamond seed, nano-Ni, diamond powder, and mixture of nano-Ni/diamond powder, were used to activate Si wafers for diamond film growth by hot-filament CVD (HFCVD). Diamond crystals were shown to grow directly on both large diamond powder and small nanodiamond seed, but a better crystallinity of diamond film was observed on the ultrasonicated nanodiamond seeded Si substrate. On the other hand, nano-Ni nanocatalysts seem to promote the formation of amorphous carbon but suppress transpolyacetylene (t-PA) phases at the initial growth of diamond films. The subsequent nucleation and growth of diamond crystals on the amorphous carbon layer leads to generation of the spherical diamond particles and clusters prior to coalescence into continuous diamond films based on the CH3 addition mechanism as characterized by XRD, Raman, ATR/FT-IR, XPS, TEM, SEM, and AFM techniques. Moreover, a 36% reduction in surface roughness of diamond film assisted by nano-Ni catalyst is quite significant.

SIMULATION OPTIMIZATION OF THE HEAT TRANSFER CONDITIONS IN HFCVD DIAMOND FILM GROWTH INSIDE HOLES

2013 ◽  
Vol 20 (03n04) ◽  
pp. 1350031 ◽  
Author(s):  
XINCHANG WANG ◽  
JIANGUO ZHANG ◽  
TAO ZHANG ◽  
BIN SHEN ◽  
FANGHONG SUN
Keyword(s):  
Heat Transfer ◽  
Diamond Film ◽  
Film Growth ◽  
Water Flux ◽  
Control Variable ◽  
Diamond Films ◽  
Cooling Water ◽  
Chemical Vapor ◽  
Transfer Characteristic ◽  
Diamond Film Growth

Finite volume method (FVM) is adopted in the present investigation to simulate the temperature and reactant gas velocity distributions in hot filament chemical vapor deposition (HFCVD) diamond film growth inside holes, using a detailed 3D computational model well in accordance with the actual reactor. The influences of the heat transfer characteristic of the substrate and the auxiliary heat transfer conditions are firstly studied by control variable method (CVM), including the thermal conductivity of the substrate k, the size of the red bronze support block V(x × y × z), the cooling water flux Qw, the reactant gas flux Qg, the arrangement of the gas outlets A out and the emissivities of the different solid surfaces ϵ. Thereafter, the substrate temperature data measured in the actual HFCVD reactor with three chosen groups of parameters are compared with those obtained from the simulations, presenting similar trends and small deviations less than 5%. Moreover, the auxiliary heat transfer conditions are optimized for both the WC- Co and SiC substrates based on the simulation and measurement results, and corresponding deposition parameters are also determined. Furthermore, HFCVD diamond films are deposited on the inner surfaces of both the substrates under the optimized conditions. The characterization results show that high-quality diamond films with uniform thickness and fine-faceted crystals are obtained, indicating that this optimization method focusing on the heat transfer conditions is feasible and correct.

Simulation of Substrate Temperature Distribution in Diamond Films Growth on Silicon Wafer by Hot Filament CVD

2011 ◽  
Vol 697-698 ◽  
pp. 454-457 ◽  
Author(s):  
T. Zhang ◽  
Jian Guo Zhang ◽  
Bin Shen ◽  
Fang Hong Sun
Keyword(s):  
Growth Rate ◽  
Temperature Distribution ◽  
Substrate Temperature ◽  
Diamond Films ◽  
Great Influence ◽  
Chemical Vapor ◽  
Deposition Parameters ◽  
Simulation Results ◽  
Hot Filament

The substrate temperature has great influence on the growth rate and quality of diamond films by hot filament chemical vapor deposition (HFCVD). In order to deposit polycrystalline diamond films of uniform thickness over large areas and improve the growth rate of diamond films, the substrate temperature uniformity need to be further improved. Thus three-dimensional finite volume simulation has been developed to predict substrate temperature distribution, and optimize the deposition parameters like the size and arrangement of filaments which have a profound effect on the substrate temperature. Based on the simulation results, the optimum parameters of diamond deposition are found. Subsequently, experiments of depositing diamond films on silicon (100) wafers are done when the deposition parameters are fixed at optimum values gained from the simulation results. According to the results of scanning electron microscopy (SEM) and Raman spectroscopy, the thickness and quality of diamond films are homogeneous, which validate that the simulated deposition parameters are conducive to fabricate the high quality diamond films.

Simulation of Temperature Distribution in HFCVD Diamond Films Growth on WC-Co Drill Tools in Large Quantities

2013 ◽  
Vol 589-590 ◽  
pp. 399-404 ◽  
Author(s):  
Lei Cheng ◽  
Jian Guo Zhang ◽  
Xin Chang Wang ◽  
Tao Zhang ◽  
Bin Shen ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Temperature Data ◽  
Diamond Coating ◽  
Substrate Distance ◽  
Complex Shapes ◽  
Simulation Results ◽  
Volume Method ◽  
Hot Filament

The substrate temperature distribution in hot filament chemical vapor deposition (HFCVD) diamond films growth on drill tools in large quantities are simulated by the finite volume method (FVM), adopting a detailed 3-D computational model corresponding with the actual reactor. Firstly, the correctness of the simulation model is verified by comparing the temperature data obtained from the simulation with that measured in an actual depositing process, and the results show that the error between them is less than 3%. Thereafter, the influences of several parameters are studied, including the filament separation (D), the length of the filament (L) and the filament-substrate distance (H). The simulation results show the three parameters have different effects on the distribution of temperature field. The influence of D is the greatest, L is followed and then H. The simulation has important theoretical guidance on both the development of HFCVD deposition equipment using for the diamond coating on tools with complex shapes in large quantities and the research of related production process.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

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