The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

Step structure and 5×5 restructure of annealled LaAlO3 {100} - a substrate for electroceramic thin film growth

1995 ◽  
Vol 53 ◽  
pp. 346-347
Author(s):  
Z. L. Wang ◽  
A.J. Shapiro
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Film Growth ◽  
Thin Film Growth ◽  
Transmission Electron ◽  
The Face ◽  
Reflection Electron Microscopy ◽  
Electron Microscopes ◽  
Substrate Surfaces ◽  
Microscopy Techniques

Nucleation and growth of thin films are strongly affected by the microstructures of the substrate surfaces. Although LaA1O3 {100} surfaces have been widely used as substrates for growing high Tc superconductor and ferroelectric thin films, the surface structure of the material has not been extensively analyzed using electron microscopy techniques. In this paper, reflection electron microscopy (REM) [1] is applied to examine the structures of LaA1O3 {100}. REM experiments were carried out at 300 kV and 120 kV in transmission electron microscopes. The {100} surfaces were mechanically polished and subsequently annealed at 1500 °C for 20 h in air. The LaA1O3 unit cell is the distorted-perovskite structure with lattice constant a = b = c = 0.3788 nm and α = β = γ = 90.066°, in which the La+3 ion locates at (000), the A1+3 ion at (0.5 0.5 0.5), and the O−2 ions at the face-centers {0.5 0.5 0}.

Rem and Tem Studies of Thin Film Growth Dynamics on si Surfaces

1995 ◽  
Vol 404 ◽  
Author(s):  
Hiroki Minoda ◽  
Yasumasa Tanishiro ◽  
Katsumichi Yagi
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Film Growth ◽  
Growth Dynamics ◽  
Thin Film Growth ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Nucleation Size

AbstracA study of surfactant-mediated epitaxy of Ge on Si(111) surfaces was carried out by in-situ transmission electron microscopy (TEM) and reflection electron microscopy (REM). Formation of 3D islands on the Si(111)-In surfaces was suppressed because of a change of critical nucleation size of the 3D islands. It was also found that formation of misfit dislocations at the interface between Si and Ge films was promoted by predeposition of In.

Observation of gold thin film growth with reflection electron microscopy

1990 ◽  
Vol 187 (1) ◽  
pp. 133-140 ◽  
Author(s):  
Terrence Jach ◽  
Gary Hembree ◽  
L.B. Holdeman
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Gold Thin Film ◽  
Reflection Electron Microscopy

Reflection electron microscopy study of thin film growth

1993 ◽  
Vol 228 (1-2) ◽  
pp. 12-17 ◽  
Author(s):  
Katsumichi Yagi ◽  
Hiroki Minoda ◽  
Masashi Shima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Film Growth ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Thin Film Growth ◽  
Reflection Electron Microscopy

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

CHARACTERIZATION AND ELECTRICAL PROPERTIES OF ALIGNED CARBON NANOTUBES WITH HIGH ASPECT RATIO

2011 ◽  
Vol 10 (01n02) ◽  
pp. 23-28
Author(s):  
RAVI BHATIA ◽  
V. PRASAD ◽  
M. REGHU
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Aspect Ratio ◽  
Multiwall Carbon Nanotubes ◽  
High Quality ◽  
Transmission Electron Microscopy Analysis ◽  
Transmission Electron ◽  
Electron Microscopy Analysis ◽  
High Degree

High-quality multiwall carbon nanotubes (MWNTs) were produced by a simple one-step technique. The production of MWNTs was based on thermal decomposition of the mixture of a liquid phase organic compound and ferrocene. High degree of alignment was noticed by scanning electron microscopy. The aspect ratio of as-synthesized MWNTs was quite high (more than 4500). Transmission electron microscopy analysis showed the presence of the catalytic iron nanorods at various lengths of MWNTs. Raman spectroscopy was used to know the quality of MWNTs. The ratio of intensity of the G-peak to the D-peak was very high which revealed high quality of MWNTs. Magnetotransport studies were carried out at low temperature and a negative MR was noticed.

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