Effects of Post-Annealing Temperature on the Structure and Electrical Properties of N-Doped ZnO Films

2014 ◽  
Vol 1070-1072 ◽  
pp. 475-478
Author(s):  
Xiang Min Zhao
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Atomic Force ◽  
Post Annealing ◽  
Optimal Annealing Temperature ◽  
Structure Morphology ◽  
Doped Zno ◽  
P Type

N-doped ZnO films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering in N2/Ar2 gas mixture. After the deposition, the films were post-annealed in vacuum at several temperatures from 400°C to 850°C for 60 minutes respectively.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO films following post-annealing. When the annealing temperature is higher than 650°C achieved by the n-type ZnO to the p-type transition and for the better growth of p-type ZnO films, the optimal annealing temperature is 650°C.

Influence of Post Annealing Temperature on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 602-606
Author(s):  
Samsiah Ahmad ◽  
N.D.M. Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Current Voltage ◽  
Post Annealing Temperature

Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition annealing of the ZnO thin film were performed at 350, 400, 450 and 500°C. Post annealing temperature was found to improve the structural and electrical characteristics of the deposited films. The structural properties of the films were carried out by the surface profiler, X-Ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) while the electrical properties were measured using current voltage (I-V) probe measurement system. All samples exhibit the (002) peak and the sample annealed at 500°C gives the highest crystalline quality, highest Rms roughness (1.819 nm) and highest electrical conductivity (3.28 x 10-3 Sm-1).

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

Effects of Thermal Annealing on Electrical, Optical and Structural Properties of Ga-Doped ZnO Films

2010 ◽  
Vol 638-642 ◽  
pp. 2891-2896
Author(s):  
P.C. Chang ◽  
K.H. Lee ◽  
A.N. Tu ◽  
S.J. Chang ◽  
K.L. Lee
Keyword(s):  
Structural Properties ◽  
Thermal Annealing ◽  
Carrier Transport ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Ga doped ZnO (GZO) films were prepared by radio frequency (rf) magnetron sputtering on glass or silicon substrates. Electrical, optical, and structural properties of these films were analyzed in order to investigate their dependence on thermal annealing temperature. GZO films with a minimum resistivity of 5.2×10-3 Ω-cm annealed at 400°C and a transparency above 80% in visible region were observed. The temperature-dependent conductivity affected the carrier transport and was related to the localization of carriers. The results of transmission spectra were consistent with the results of atomic force microscopy (AFM) scan. X-ray diffraction analysis and electron spectroscopy for chemical analysis were also used to investigate the properties of GZO films.

Effect of rapid thermal treatments on the physical properties of Cobalt Doped ZnO Films

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 163-168
Author(s):  
C. Davesnne ◽  
C. Frilay ◽  
P. Marie ◽  
C. Labbé ◽  
F. Ehre ◽  
...  
Keyword(s):  
Lattice Parameter ◽  
Annealing Duration ◽  
Zno Films ◽  
Thermal Treatments ◽  
Si Substrates ◽  
Post Annealing ◽  
The Matrix ◽  
The Mean ◽  
Doped Zno ◽  
P Type

ABSTRACTCobalt doped ZnO (ZnO:Co) films with a 1 at% doping rate have been successfully grown on (100) oriented p type Si substrates by radiofrequency magnetron sputtering. Post annealing treatments at 973 K for various short periods have been carried out and structural, optical and electrical properties of the films have been investigated. Upon rapid annealing, the dopant distribution in the film has been found homogeneous. The annealing improves the (002) texture of the film and the mean column width increases with the annealing duration from 60 nm up to 95 nm. The lattice parameter of the ZnO:Co films decreases upon annealing and approaches that of bulk ZnO. The photoluminescence (PL) study reveals that the Co2+ ions can be excited directly or through a transfer mechanism from the matrix. The PL intensity decreases with the annealing time suggesting a diffusion process of the dopant impeding the Co2+ emission. At last, the electrical conductivity reaches values compatible with potential electroluminescent applications of the ZnO:Co films.

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