Influence of Post Annealing Temperature on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 602-606
Author(s):  
Samsiah Ahmad ◽  
N.D.M. Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Current Voltage ◽  
Post Annealing Temperature

Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition annealing of the ZnO thin film were performed at 350, 400, 450 and 500°C. Post annealing temperature was found to improve the structural and electrical characteristics of the deposited films. The structural properties of the films were carried out by the surface profiler, X-Ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) while the electrical properties were measured using current voltage (I-V) probe measurement system. All samples exhibit the (002) peak and the sample annealed at 500°C gives the highest crystalline quality, highest Rms roughness (1.819 nm) and highest electrical conductivity (3.28 x 10-3 Sm-1).

Synthesis and Morphology of ZnO Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 307 ◽  
pp. 333-336
Author(s):  
Shiuh Chuan Her ◽  
Tsung Chi Chi
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Zinc oxide (ZnO) thin films were deposited on glass substrate by Radio frequency (RF) magnetron sputtering. The effect of substrate temperature on the microstructure of the ZnO films has been investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature.

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

Influence of Sputtering Power on Structural and Optical Properties of ZnO Films Fabricated by RF Magnetron Sputtering

2014 ◽  
Vol 1053 ◽  
pp. 325-331
Author(s):  
Yang Zhou ◽  
Hong Fang Zheng ◽  
Guang Zhao ◽  
Man Li ◽  
Bao Ting Liu
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Light Region ◽  
Sputtering Power ◽  
Average Transmission

ZnO thin film has been fabricated on sapphire substrate (0001) using RF magnetron sputtering at room temperature. The influence of sputtering power ranging from 10 W to 70 W on the microstructural and optical properties of ZnO films is investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer. The AFM results show that with the increase of sputtering power, the size of ZnO crystalline increases first, then decrease and the maximum grain size occurs at 50 W. The XRD measurements indicate that the ZnO films with wurtzite structure are highly c-axis orientation and the film fabricated at 50 W has the best crystalline quality. Optical transmission spectra of the ZnO samples demonstrate that the ZnO film obtained at 50 W has the higher average transmission (above 90%) in the visible-light region and its optical band gap is 3.26 eV.

Role of Sputtering Power on the Structural and Optical Properties of ZnO/SiO2 Films Deposited by Radio Frequency Magnetron Sputtering

2013 ◽  
Vol 760-762 ◽  
pp. 776-779
Author(s):  
Shuang Li ◽  
Ming Chen ◽  
Feng Xiang Wang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Force Microscopy ◽  
Sputtering Power

In the present work, we investigated the effect of sputtering power on the structural and optical properties of ZnO films by radio frequency (rf) magnetron sputtering. Atom force microscopy (AFM), X-ray diffraction (XRD) and Prism coupling method were adopted to investigate the structure and optical properties of ZnO thin films deposited by sputtering powers in the range from 100~150W. XRD and AFM results shown that ZnO films with high c-axis preferred orientation crystalline structures have been successfully deposited under higher sputtering power condition. Moreover, it was also found that the indexes refractive of the films obtained by higher sputtering power are less than that of the bulk ZnO materials, which is closer to Crystal Refractive index.

Effect of Li-doping on Photoluminescence of Screen-printed Zinc Oxide Films

2015 ◽  
Vol 1766 ◽  
pp. 167-177 ◽  
Author(s):  
L. Khomenkova ◽  
V. Kushnirenko ◽  
M. Osipenok ◽  
K. Avramenko ◽  
Y. Polishchuk ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Li Doping ◽  
Grain Sizes ◽  
Zinc Oxide Films ◽  
Atomic Force ◽  
Reduced Density ◽  
Film Conductivity

ABSTRACTUndoped and Li-doped ZnO films were fabricated by screen printing approach on sapphire substrate. The effect of Li doping and annealing temperature on the luminescent, optical, electrical and structural properties of the films has been investigated by the photoluminescence (PL), Raman scattering, conductivity, Atomic Force microscopy and X-ray diffraction (XRD) methods. The XRD study revealed that the films have polycrystalline wurtzite structure with grain sizes ranging from 26 to 38 nm. In the undoped ZnO films, the increase of annealing temperature from 800 to 1000 °C resulted in the increase of the grain sizes, film conductivity and the intensity of the ultraviolet PL. The introduction of Li of low concentration of 0.003 wt % at 800 °C or 900 °C allows producing the low-resistive films with enhanced ultraviolet PL and reduced density of crystalline defects. Highly doped films (with 0.3 wt % of Li) were found to be semi-insulating with deteriorated PL properties irrespectively of the annealing temperature. It is shown that introduction of Li in the ZnO films affects their PL spectra mainly via the evolution of the film crystallinity and the density of intrinsic defects.

Effects of Post-Annealing Temperature on the Structure and Electrical Properties of N-Doped ZnO Films

2014 ◽  
Vol 1070-1072 ◽  
pp. 475-478
Author(s):  
Xiang Min Zhao
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Atomic Force ◽  
Post Annealing ◽  
Optimal Annealing Temperature ◽  
Structure Morphology ◽  
Doped Zno ◽  
P Type

N-doped ZnO films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering in N2/Ar2 gas mixture. After the deposition, the films were post-annealed in vacuum at several temperatures from 400°C to 850°C for 60 minutes respectively.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO films following post-annealing. When the annealing temperature is higher than 650°C achieved by the n-type ZnO to the p-type transition and for the better growth of p-type ZnO films, the optimal annealing temperature is 650°C.

scholarly journals Highly c-axis Oriented ZnO Thin Films by Sol-gel Method

2021 ◽  
Author(s):  
Taner Kutlu ◽  
Necdet H. Erdogan ◽  
Nazmi Sedefoglu ◽  
Hamide Kavak
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Optical Measurement ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Coating Method

Abstract This study reports the effect of annealing temperature on the structural, morphological, and optical properties of ZnO (Zinc Oxide) thin films deposited on a glass substrate by the sol-gel spin coating method. Those properties of ZnO were examined with UV-Vis, Fourier transform infrared (FTIR) and Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray diffraction (XRD), before and after annealing. XRD results revealed that all the samples had a highly c-axis oriented wurtzite structure. A 1 (LO) mode in Raman spectra also confirmed the highly oriented ZnO films. Optical measurement indicated that transmittance of the films was above %85, and the optical band gap slightly decreased with the increasing annealing temperature from 350 to 550 °C. Morphological analysis displayed that increasing annealing temperature improved surface morphology and enlarged the grain size from 2-3 nm for as-deposited samples to 150 nm for annealed at 550 °C.

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